Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: The laser radar includes: a light source configured to emit laser light; an optical system configured to shape the laser light into a line beam that is long in one direction, and project the line beam; a scanner configured to perform scanning with the line beam in a short side direction of the line beam; and a configuration for causing light intensity of the line beam to be different in a long side direction of the line beam. The light intensity of the line beam is caused to be different, for example, by a controller controlling emission power of a plurality of light emitting portions disposed in the light source along a direction corresponding to the long side direction of the line beam.

Abstract: A laser radar includes: a light source including a laser diode; an optical system configured to shape laser light emitted from the laser diode, into a line beam that is long in one direction, and project the line beam to a target area; and a scanner configured to perform scanning with the line beam in a short side direction of the line beam. The laser diode is disposed such that a fast axis of the laser diode extends along a direction corresponding to the short side direction of the line beam.

Abstract: An optical device includes: a silicon substrate in which a plane direction of a crystal plane of a principal surface is a (111) plane, the principal surface having an uneven structure; and a conductor that is joined to the silicon substrate by Schottky junction, in which the conductor is directly joined to a (111) plane of at least one of a protruding portion or a depressed portion in the uneven structure.

Abstract: There is provided a detection device for detecting a detection target substance by using a metal material modified with a first substance having a property of specifically binding to the detection target substance and a fluorescent material modified with a second substance having a property of specifically binding to the detection target substance, the detection device including: a light source that emits light for exciting the fluorescent material; a photodetector that detects fluorescence emitted by the fluorescent material over time for a specific period from when emission of the light by the light source is stopped; and a processor that detects the detection target substance in a complex formed of the metal material, the detection target substance, and the fluorescent material binding to each other, on the basis of an attenuation characteristic of the fluorescence during the specific period.

Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: The laser radar includes: a light source configured to emit laser light; an optical system configured to shape the laser light into a line beam that is long in one direction, and project the line beam; a scanner configured to perform scanning with the line beam in a short side direction of the line beam; and a configuration for causing light intensity of the line beam to be different in a long side direction of the line beam. The light intensity of the line beam is caused to be different, for example, by a controller controlling emission power of a plurality of light emitting portions disposed in the light source along a direction corresponding to the long side direction of the line beam.

Abstract: A laser radar includes: a light source including a laser diode; an optical system configured to shape laser light emitted from the laser diode, into a line beam that is long in one direction, and project the line beam to a target area; and a scanner configured to perform scanning with the line beam in a short side direction of the line beam. The laser diode is disposed such that a fast axis of the laser diode extends along a direction corresponding to the short side direction of the line beam.

Abstract: A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e2, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.

Abstract: A measurement device 100 includes a measurement section 10 and the like, and the measurement section 10 includes an SA 14 that receives a signal for measuring transmission characteristics with a frequency in a predetermined frequency band from a DUT 1, an SG 15 that outputs a signal for measuring reception characteristics with a frequency in a predetermined frequency band to the DUT 1, a band storage section 16 that stores information on a frequency band handled by the measurement section 10, and a band setting section 12 that sets a frequency band handled by the SA 14 and the SG 15 on the basis of information of a frequency band handled by other measurement sections 20, 30, and 40.

Abstract: A strain detector includes a strain-causing portion, an insulation film formed on the strain-causing portion, a strain gauge formed on the insulation film and configured to detect the strain generated by the strain-causing portion as electric signals, an electrode connected to the strain gauge, a bonding pad extending from the electrode, a bonding wire connected to the bonding pad, and an insulative resin layer covering the strain gauge without covering the bonding pad and the bonding wire.

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

Abstract: A detector provided on a flat portion of a diaphragm includes a plurality of strain gauges, resistor element connectors connecting adjacent ones of the strain gauges, and an electric conductor covering a part of the resistor element connectors. First linear portions and second linear portions of the resistor element connectors exposed from the electric conductor are orthogonal to the edges of the electric conductor extending across the first linear portions and the second linear portions. Even when a pattern of the resistor element connector and a pattern of electric conductor are misaligned in X direction or in Y direction, an area of the resistor element connector exposed from the electric conductor does not change.

Abstract: A strain detector includes a strain-causing portion, an insulation film formed on the strain-causing portion, a strain gauge formed on the insulation film and configured to detect the strain generated by the strain-causing portion as electric signals, an electrode connected to the strain gauge, a bonding pad extending from the electrode, a bonding wire connected to the bonding pad, and an insulative resin layer covering the strain gauge without covering the bonding pad and the bonding wire.

Abstract: A measurement device 100 includes a measurement section 10 and the like, and the measurement section 10 includes an SA 14 that receives a signal for measuring transmission characteristics with a frequency in a predetermined frequency band from a DUT 1, an SG 15 that outputs a signal for measuring reception characteristics with a frequency in a predetermined frequency band to the DUT 1, a band storage section 16 that stores information on a frequency band handled by the measurement section 10, and a band setting section 12 that sets a frequency band handled by the SA 14 and the SG 15 on the basis of information of a frequency band handled by other measurement sections 20, 30, and 40.

Abstract: A detector is provided by coating a fluid conductive material on a flat portion of a diaphragm. The detector includes: a resistor element; resistor element electrodes, which are overlapped and connected with mutually opposed parts of the resistor element; and a linear conductor connected with the resistor element electrodes. The resistor element electrodes each include: a linear portion having a linear inner side facing an inner side of paired one of the resistor element electrodes; and peripheral portions defined at both ends of the linear portion, at least one of the peripheral portions being connected with the linear conductor. All of the linear portions are arranged so that inner sides are arranged mutually in parallel. The resistor element is connected with the linear portion. The peripheral portions are exposed without being connected with the resistor element.

Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.

Abstract: A detector is provided by coating a fluid conductive material on a flat portion of a diaphragm. The detector includes: a resistor element; resistor element electrodes, which are overlapped and connected with mutually opposed parts of the resistor element; and a linear conductor connected with the resistor element electrodes. The resistor element electrodes each include: a linear portion having a linear inner side facing an inner side of paired one of the resistor element electrodes; and peripheral portions defined at both ends of the linear portion, at least one of the peripheral portions being connected with the linear conductor. All of the linear portions are arranged so that inner sides are arranged mutually in parallel. The resistor element is connected with the linear portion. The peripheral portions are exposed without being connected with the resistor element.