Abstract: The present invention provides a thermally curable resin sheet for sealing a semiconductor chip having excellent reliability and storability while being reduced in warpage deformation due to the volume shrinkage of the thermally curable resin sheet, and a method for manufacturing a semiconductor package. The present invention relates to a thermally curable resin sheet for sealing a semiconductor chip, wherein an activation energy (Ea) satisfies the following formula (1), a glass transition temperature of a product thermally cured at 150° C. for 1 hour is 125° C. or higher, and a thermal expansion coefficient ? [ppm/K] of the thermally cured product at the glass transition temperature or lower and a storage modulus E? [GPa] at 25° C. of the thermally cured product satisfy the following formula (2): 30?Ea?120 [kJ/mol]??(1); and 10,000??×E??300,000 [Pa/K]??(2).

Abstract: Provided are a sealing sheet having excellent flexibility and capable of producing an electronic component package which is highly reliable even if an object to be sealed has a hollow structure, a method for manufacturing the sealing sheet, and a method for manufacturing the electronic component package. The present invention is a sealing sheet containing dispersed domains of an elastomer, the domains having a maximum diameter of 20 ?m or less.

Abstract: A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.

Abstract: A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer.

Abstract: A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

Abstract: A method for manufacturing an electronic parts device allowing for easy overmolding and underfilling without requiring a jig for preventing leakage of the melted resin composition, and a resin composition sheet for electronic parts encapsulation used therein.

Abstract: A thermosetting encapsulation adhesive sheet which is used for encapsulating a chip type device (1) having connection electrodes (bumps) (3) and mounted on a wiring circuit board (2). The thermosetting encapsulation adhesive sheet is composed of an epoxy resin composition having a viscosity of 5×104 to 5×106 Pa·s as measured at a temperature of 80 to 120° C. before thermosetting thereof. The thermosetting encapsulation adhesive sheet makes it possible to conveniently encapsulate a hollow device with an improved yield.

Abstract: Provided are a sealing resin sheet, wherein a clean, smooth and flat ground surface is obtained by grinding after resin sealing, a method for producing an electronic component package using the same, and an electronic component package obtained by the production method. The present invention provides a sealing resin sheet, wherein a ground surface has a mean surface roughness Ra of 1 ?m or less when grinding is performed under conditions of a grind bite peripheral velocity of 1000 m/minute, a feed pitch of 100 ?m and a cut depth of 10 ?m after a heat curing treatment is performed at 180° C. for 1 hour; and a Shore D hardness at 100° C. after the heat curing treatment is 70 or more.

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided.

Abstract: A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer.

Abstract: A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer.

Abstract: In order to provide a thermally-detachable sheet that detaches at higher temperatures, this thermally-detachable sheet has a shear bond strength with respect to a silicon wafer of 0.25 kg/5×5 mm or larger, at a temperature of 200° C., after said temperature has been maintained for one minute, and a shear bond strength with respect to a silicon wafer of 0.25 kg/less than 5×5 mm at any temperature in a range of over 200° C. to not more than 500° C., after said temperature has been maintained for three minutes.

Abstract: An object of the invention is to prevent staining of processing equipment by a resin originated from a resin sheet during pressing. The present invention achieves the object by a laminate having a support, a resin sheet that is laminated on a part of the support, and a release sheet that is laminated on the resin sheet, in which a peel force F1 between the support and the resin sheet is larger than a peel force F2 between the resin sheet and the release sheet.

Abstract: A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.

Abstract: An electronic-component-sealing resin sheet capable of restraining the warp amount of a package obtained by use of the sheet, a resin-sealed type semiconductor device high in reliability, and a method for producing the device are provided. The present invention relates to a resin sheet for sealing an electronic component, wherein after the resin sheet is hot-pressed onto an iron nickel alloy plate containing 42% by weight of nickel and having a shape 90 mm square and a thickness of 0.15 mm to give a thickness 0.2 mm and the resultant hot-pressed unit is cured at 150° C., the unit exhibits a warp amount of 5 mm or less.

Abstract: Provided are a sealing resin sheet, wherein a clean, smooth and flat ground surface is obtained by grinding after resin sealing, a method for producing an electronic component package using the same, and an electronic component package obtained by the production method. The present invention provides a sealing resin sheet, wherein a ground surface has a mean surface roughness Ra of 1 ?m or less when grinding is performed under conditions of a grind bite peripheral velocity of 1000 m/minute, a feed pitch of 100 ?m and a cut depth of 10 ?m after a heat curing treatment is performed at 180° C. for 1 hour; and a Shore D hardness at 100° C. after the heat curing treatment is 70 or more.

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided.

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided.

Abstract: A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Abstract: The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.