Patents by Inventor Einosuke Tsuda

Einosuke Tsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240355593
    Abstract: An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.
    Type: Application
    Filed: April 18, 2023
    Publication date: October 24, 2024
    Inventors: Melvin Verbaas, Einosuke Tsuda
  • Patent number: 12094753
    Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: September 17, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Melvin Verbaas, Einosuke Tsuda, Kentaro Asakura
  • Publication number: 20240145267
    Abstract: A substrate processing apparatus removes carbon-containing substances present at a peripheral edge of a substrate, which includes: a processing container; a substrate stage that places the substrate thereon within the processing container and supports at least a portion of the substrate excluding the peripheral edge; an LED heating unit that has a plurality of LED elements and irradiates the peripheral edge of the substrate with LED light from the plurality of LED elements, thereby heating the carbon-containing substances present at the peripheral edge; and a gas supply unit that supplies an oxygen-containing gas to the peripheral edge of the substrate.
    Type: Application
    Filed: October 17, 2023
    Publication date: May 2, 2024
    Inventor: Einosuke TSUDA
  • Publication number: 20230096191
    Abstract: A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.
    Type: Application
    Filed: September 19, 2022
    Publication date: March 30, 2023
    Inventors: Takeshi ITATANI, Einosuke TSUDA, Tadahiro ISHIZAKA, Satoshi TAKEDA
  • Patent number: 11393696
    Abstract: A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: July 19, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Einosuke Tsuda
  • Patent number: 11281116
    Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: March 22, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Einosuke Tsuda, Daisuke Toriya, Satoshi Yonekura, Satoshi Takeda, Motoshi Fukudome, Kyoko Ikeda
  • Publication number: 20220010428
    Abstract: A substrate support is provided. The substrate support includes a main body of the substrate support that receives a heat input from at least an outside of the substrate support, a refrigerant passage provided in the main body and configured to take heat from the main body by a refrigerant, a switching mechanism that switches a position where the refrigerant is supplied to the refrigerant passage and a position where the refrigerant is discharged from the refrigerant passage between one end and the other end of the refrigerant passage in order to reverse a direction in which the refrigerant flows in the refrigerant passage, and a control unit. The control unit is configured to control the switching mechanism so as to repeatedly reverse the direction in which the refrigerant flows during a period in which the main body receives the heat input.
    Type: Application
    Filed: July 6, 2021
    Publication date: January 13, 2022
    Inventors: Toshiki KOBAYASHI, Einosuke TSUDA
  • Publication number: 20220013402
    Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.
    Type: Application
    Filed: June 30, 2021
    Publication date: January 13, 2022
    Inventors: Melvin VERBAAS, Einosuke TSUDA, Kentaro ASAKURA
  • Patent number: 11193205
    Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: December 7, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuichi Furuya, Hiroyuki Mori, Einosuke Tsuda, Eiichi Komori, Tomohisa Kimoto
  • Publication number: 20210302846
    Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 30, 2021
    Inventors: Einosuke TSUDA, Daisuke TORIYA, Satoshi YONEKURA, Satoshi TAKEDA, Motoshi FUKUDOME, Kyoko IKEDA
  • Patent number: 10950417
    Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: March 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Einosuke Tsuda, Seishi Murakami, Takayuki Kamaishi
  • Publication number: 20200291514
    Abstract: An apparatus for forming a predetermined film on a substrate, includes a processing container into which a film-forming raw material gas is introduced, a stage provided inside the processing container, and a housing body provided below the processing container and communicating with an exhaust port provided in a bottom portion of the processing container. The housing body includes a housing section that houses a support member of the stage, and a manifold section opened toward the housing section while being in communication with an exhaust device. An exhaust space is formed at a side of a lower surface of the stage. Atmosphere above the stage flows into the exhaust space along a peripheral portion of the stage. The housing section is smaller in horizontal cross-sectional area than the exhaust space. An inlet of the housing section is smaller in cross-sectional area than an outlet of the housing section.
    Type: Application
    Filed: March 5, 2020
    Publication date: September 17, 2020
    Inventor: Einosuke TSUDA
  • Publication number: 20200243347
    Abstract: A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.
    Type: Application
    Filed: January 27, 2020
    Publication date: July 30, 2020
    Inventor: Einosuke TSUDA
  • Publication number: 20190180988
    Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.
    Type: Application
    Filed: December 5, 2018
    Publication date: June 13, 2019
    Inventors: Yuichi FURUYA, Hiroyuki MORI, Einosuke TSUDA, Eiichi KOMORI, Tomohisa KIMOTO
  • Publication number: 20180366303
    Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.
    Type: Application
    Filed: June 11, 2018
    Publication date: December 20, 2018
    Inventors: Einosuke TSUDA, Seishi MURAKAMI, Takayuki KAMAISHI
  • Publication number: 20180261464
    Abstract: Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching.
    Type: Application
    Filed: March 7, 2018
    Publication date: September 13, 2018
    Inventors: Takashi Kobayashi, Takashi Sakuma, Hideaki Yamasaki, Rio Shimizu, Einosuke Tsuda
  • Patent number: 9984892
    Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: May 29, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
  • Publication number: 20170338120
    Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
    Type: Application
    Filed: May 16, 2017
    Publication date: November 23, 2017
    Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
  • Publication number: 20150322571
    Abstract: A substrate processing apparatus for processing a substrate by using a plasma includes a processing chamber configured to airtightly accommodate a substrate, a lower electrode serving as a mounting table configured to mount thereon the substrate in the processing chamber, an upper electrode, serving as a shower plate having a plurality of gas supply openings, provided opposite to the substrate to be mounted on the mounting table, an insulating member disposed to surround an outer peripheral portion of the upper electrode, and a processing gas supply source configured to supply a processing gas into the processing chamber through the shower plate. The substrate processing apparatus further includes a heating unit provided at the insulating member to heat the insulating member.
    Type: Application
    Filed: May 6, 2015
    Publication date: November 12, 2015
    Inventors: Hideaki YAMASAKI, Takashi KAKEGAWA, Einosuke TSUDA, Tomohiro OOTA
  • Patent number: 8945306
    Abstract: A gas supply device disposed opposite to a substrate mounted on a loading board in a processing container and supplying a process gas for processing the substrate comprises a top plate member having a recess formed to spread gradually toward the state in order to constitute a gas diffusion space at a position facing the substrate on the loading board, and a gas supply nozzle projecting into the recess from the top thereof and having a plurality of gas supply holes along the circumferential direction of the recess.
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: February 3, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Einosuke Tsuda