Patents by Inventor Einosuke Tsuda
Einosuke Tsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240355593Abstract: An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.Type: ApplicationFiled: April 18, 2023Publication date: October 24, 2024Inventors: Melvin Verbaas, Einosuke Tsuda
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Patent number: 12094753Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.Type: GrantFiled: June 30, 2021Date of Patent: September 17, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Melvin Verbaas, Einosuke Tsuda, Kentaro Asakura
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Publication number: 20240145267Abstract: A substrate processing apparatus removes carbon-containing substances present at a peripheral edge of a substrate, which includes: a processing container; a substrate stage that places the substrate thereon within the processing container and supports at least a portion of the substrate excluding the peripheral edge; an LED heating unit that has a plurality of LED elements and irradiates the peripheral edge of the substrate with LED light from the plurality of LED elements, thereby heating the carbon-containing substances present at the peripheral edge; and a gas supply unit that supplies an oxygen-containing gas to the peripheral edge of the substrate.Type: ApplicationFiled: October 17, 2023Publication date: May 2, 2024Inventor: Einosuke TSUDA
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Publication number: 20230096191Abstract: A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.Type: ApplicationFiled: September 19, 2022Publication date: March 30, 2023Inventors: Takeshi ITATANI, Einosuke TSUDA, Tadahiro ISHIZAKA, Satoshi TAKEDA
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Patent number: 11393696Abstract: A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.Type: GrantFiled: January 27, 2020Date of Patent: July 19, 2022Assignee: TOKYO ELECTRON LIMITEDInventor: Einosuke Tsuda
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Patent number: 11281116Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.Type: GrantFiled: March 17, 2021Date of Patent: March 22, 2022Assignee: Tokyo Electron LimitedInventors: Einosuke Tsuda, Daisuke Toriya, Satoshi Yonekura, Satoshi Takeda, Motoshi Fukudome, Kyoko Ikeda
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Publication number: 20220010428Abstract: A substrate support is provided. The substrate support includes a main body of the substrate support that receives a heat input from at least an outside of the substrate support, a refrigerant passage provided in the main body and configured to take heat from the main body by a refrigerant, a switching mechanism that switches a position where the refrigerant is supplied to the refrigerant passage and a position where the refrigerant is discharged from the refrigerant passage between one end and the other end of the refrigerant passage in order to reverse a direction in which the refrigerant flows in the refrigerant passage, and a control unit. The control unit is configured to control the switching mechanism so as to repeatedly reverse the direction in which the refrigerant flows during a period in which the main body receives the heat input.Type: ApplicationFiled: July 6, 2021Publication date: January 13, 2022Inventors: Toshiki KOBAYASHI, Einosuke TSUDA
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Publication number: 20220013402Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.Type: ApplicationFiled: June 30, 2021Publication date: January 13, 2022Inventors: Melvin VERBAAS, Einosuke TSUDA, Kentaro ASAKURA
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Patent number: 11193205Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.Type: GrantFiled: December 5, 2018Date of Patent: December 7, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichi Furuya, Hiroyuki Mori, Einosuke Tsuda, Eiichi Komori, Tomohisa Kimoto
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Publication number: 20210302846Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.Type: ApplicationFiled: March 17, 2021Publication date: September 30, 2021Inventors: Einosuke TSUDA, Daisuke TORIYA, Satoshi YONEKURA, Satoshi TAKEDA, Motoshi FUKUDOME, Kyoko IKEDA
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Patent number: 10950417Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: GrantFiled: June 11, 2018Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Einosuke Tsuda, Seishi Murakami, Takayuki Kamaishi
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Publication number: 20200291514Abstract: An apparatus for forming a predetermined film on a substrate, includes a processing container into which a film-forming raw material gas is introduced, a stage provided inside the processing container, and a housing body provided below the processing container and communicating with an exhaust port provided in a bottom portion of the processing container. The housing body includes a housing section that houses a support member of the stage, and a manifold section opened toward the housing section while being in communication with an exhaust device. An exhaust space is formed at a side of a lower surface of the stage. Atmosphere above the stage flows into the exhaust space along a peripheral portion of the stage. The housing section is smaller in horizontal cross-sectional area than the exhaust space. An inlet of the housing section is smaller in cross-sectional area than an outlet of the housing section.Type: ApplicationFiled: March 5, 2020Publication date: September 17, 2020Inventor: Einosuke TSUDA
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Publication number: 20200243347Abstract: A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.Type: ApplicationFiled: January 27, 2020Publication date: July 30, 2020Inventor: Einosuke TSUDA
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Publication number: 20190180988Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.Type: ApplicationFiled: December 5, 2018Publication date: June 13, 2019Inventors: Yuichi FURUYA, Hiroyuki MORI, Einosuke TSUDA, Eiichi KOMORI, Tomohisa KIMOTO
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Publication number: 20180366303Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: ApplicationFiled: June 11, 2018Publication date: December 20, 2018Inventors: Einosuke TSUDA, Seishi MURAKAMI, Takayuki KAMAISHI
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Publication number: 20180261464Abstract: Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching.Type: ApplicationFiled: March 7, 2018Publication date: September 13, 2018Inventors: Takashi Kobayashi, Takashi Sakuma, Hideaki Yamasaki, Rio Shimizu, Einosuke Tsuda
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Patent number: 9984892Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: GrantFiled: May 16, 2017Date of Patent: May 29, 2018Assignee: Tokyo Electron LimitedInventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Publication number: 20170338120Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: ApplicationFiled: May 16, 2017Publication date: November 23, 2017Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Publication number: 20150322571Abstract: A substrate processing apparatus for processing a substrate by using a plasma includes a processing chamber configured to airtightly accommodate a substrate, a lower electrode serving as a mounting table configured to mount thereon the substrate in the processing chamber, an upper electrode, serving as a shower plate having a plurality of gas supply openings, provided opposite to the substrate to be mounted on the mounting table, an insulating member disposed to surround an outer peripheral portion of the upper electrode, and a processing gas supply source configured to supply a processing gas into the processing chamber through the shower plate. The substrate processing apparatus further includes a heating unit provided at the insulating member to heat the insulating member.Type: ApplicationFiled: May 6, 2015Publication date: November 12, 2015Inventors: Hideaki YAMASAKI, Takashi KAKEGAWA, Einosuke TSUDA, Tomohiro OOTA
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Patent number: 8945306Abstract: A gas supply device disposed opposite to a substrate mounted on a loading board in a processing container and supplying a process gas for processing the substrate comprises a top plate member having a recess formed to spread gradually toward the state in order to constitute a gas diffusion space at a position facing the substrate on the loading board, and a gas supply nozzle projecting into the recess from the top thereof and having a plurality of gas supply holes along the circumferential direction of the recess.Type: GrantFiled: August 17, 2010Date of Patent: February 3, 2015Assignee: Tokyo Electron LimitedInventor: Einosuke Tsuda