Abstract: A film-forming apparatus includes a processing chamber, and TiCl4 gas and NH3 gas are supplied into the processing chamber for forming a TiN film on a substrate W in the processing chamber by CVD. The processing chamber has a gas exhaust system. The gas exhaust system includes a gas exhaust pipe for exhausting the exhaust gas in the processing chamber a trap mechanism provided to the gas exhaust pipe for trapping a by-product in the exhaust gas, and a heated reaction gas supply mechanism for supplying a heated reaction gas into the exhaust gas. The heated reaction gas is adapted to react with a component in the exhaust gas to produce a by-product. Specifically, NH3 gas is supplied by the heated reaction gas supply mechanism as the heated reaction gas, and NH4Cl is produced as the by-product.

Abstract: A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member.

Abstract: A gas supply device disposed opposite to a substrate mounted on a loading board in a processing container and supplying a process gas for processing the substrate comprises a top plate member having a recess formed to spread gradually toward the state in order to constitute a gas diffusion space at a position facing the substrate on the loading board, and a gas supply nozzle projecting into the recess from the top thereof and having a plurality of gas supply holes along the circumferential direction of the recess.

Abstract: A film deposition apparatus comprises: a process container 2; a table 3 on which a substrate W can be placed, the table 3 being disposed in the process container 2; and a gas showerhead 4 disposed so as to be opposed to the table 3, the gas showerhead 4 including a gas supply surface 40a having a first gas supply hole 51b for supplying a first process gas, a second gas supply hole 52b for supplying a second process gas, and a third gas supply hole 53b for supplying a third process gas. The gas supply surface 40a is divided into unit zones 401 formed of regular triangles of the same size, and the first gas supply hole 51b, the second gas supply hole 52b, and the third gas supply hole 53b are disposed on respective three apexes of each regular triangle constituting the unit zone.

Abstract: A film-forming apparatus 100 includes a processing chamber 11, and TiCl4 gas and NH3 gas are supplied into the processing chamber 11 for forming a TiN film on a substrate W in the processing chamber 11 by CVD. The processing chamber 11 has a gas exhaust system 300. The gas exhaust system 300 includes a gas exhaust pipe 51 for exhausting the exhaust gas in the processing chamber 11, a trap mechanism 54 provided to the gas exhaust pipe 51 for trapping a by-product in the exhaust gas, and a heated reaction gas supply mechanism 60 for supplying a heated reaction gas into the exhaust gas. The heated reaction gas is adapted to react with a component in the exhaust gas to produce a by-product. Specifically, NH3 gas is supplied by the heated reaction gas supply mechanism 60 as the heated reaction gas, and NH4Cl is produced as the by-product.

Abstract: When supplying a fluid to a first flow channel (11a) of a valve (1), air is introduced into an air cylinder (3a) from an air introduction channel (35a). An operating plate (5a) thus slides and drives a shaft (4a) to move backward to such a position that a second sealing surface (8a) of a sealing plate (6a) abuts against a wall (13a). An air cylinder (3b) is moved forward to such a position that a sealing surface (7b) of a sealing plate (6b) abuts against a wall (12b), thereby sealing an opening (14b).