Abstract: Enclosed re-programmable non-volatile memory cards include at least two sets of electrical contacts to which the internal memory is connected. The two sets of contacts have different patterns, preferably in accordance with two different contact standards such as a memory card standard and that of the Universal Serial Bus (USB). One memory card standard that can be followed is that of the Secure Digital (SD) card. The cards can thus be used with different hosts that are compatible with one set of contacts but not the other. A cover that is hinged to the card to normally cover one set of contacts can be rotated out of the way by hand when that set of contacts is being used.

Abstract: A flash NAND type EEPROM system with individual ones of an array of charge storage elements, such as floating gates, being capacitively coupled with at least two control gate lines. The control gate lines are preferably positioned between floating gates to be coupled with sidewalls of floating gates. The memory cell coupling ratio is desirably increased, as a result. Both control gate lines on opposite sides of a selected row of floating gates are usually raised to the same voltage while the second control gate lines coupled to unselected rows of floating gates immediately adjacent and on opposite sides of the selected row are kept low. The control gate lines can also be capacitively coupled with the substrate in order to selectively raise its voltage in the region of selected floating gates. The length of the floating gates and the thicknesses of the control gate lines can be made less than the minimum resolution element of the process by forming an etch mask of spacers.

Abstract: A memory card of one published standard, such as the Multi-Media Card (MMC) or Secure Digital Card (SD), is modified to include the function of a Subscriber Identity Module (SIM) according to another published standard. The controller of the memory card communicates between electrical contacts on the outside of the card and both the memory and the SIM. In one specific form, the memory card has the physical configuration of the current Plug-in SIM card with a few external contacts added to accommodate the memory controller and data memory. In another specific form, the memory card has the physical configuration of the current SD card, including external contacts.

Abstract: Methods of fabricating a dual control gate non-volatile memory array are described. Parallel strips of floating gate material are formed over the substrate in a first direction but separated from it by a tunnel dielectric. In the gaps between these strips control gate material is formed forming a second set of parallel strips but insulated from both the adjacent floating gate stripes and the substrate. Both sets of strips are isolated in a second direction perpendicular to the first direction forming an array of individual floating gates and control gates. The control gates formed from an individual control gate strip are then interconnected by a conductive wordline such the potential on individual floating gates are controlled by the voltages on two adjacent wordlines. In other variations either the floating gates or the control gates may be recessed into the original substrate.

Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. A chunk of user data is programmed into a group of memory cells in parallel, the programming of individual memory cells being terminated when they are determined to have reached desired threshold level ranges while the programming of other memory cells continues. Other improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped.

Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. A chunk of user data is programmed into a group of memory cells in parallel, the programming of individual memory cells being terminated when they are determined to have reached desired threshold level ranges while the programming of other memory cells continues. Other improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped.

Abstract: An integrated non-volatile memory circuit is formed by first growing a thin dielectric layer on a semiconductor substrate surface, followed by depositing a layer of conductive material such as doped polysilicon on this dielectric layer, the conductive material then being separated into rows and columns of individual floating gates. Cell source and drain diffusions in the substrate are continuously elongated across the rows. Field dielectric deposited between the rows of floating gates provides electrical isolation between the rows. Shallow trenches may be included between rows without interrupting the conductivity of the diffusions along their lengths. A deep dielectric filled trench is formed in the substrate between the array and peripheral circuits as electrical isolation. Various techniques are included that increase the field coupling area between the floating gates and a control gate.

Abstract: Enclosed re-programmable non-volatile memory cards include at least two sets of electrical contacts to which the internal memory is connected. The two sets of contacts have different patterns, preferably in accordance with two different contact standards such as a memory card standard and that of the Universal Serial Bus (USB). One memory card standard that can be followed is that of the Secure Digital (SD) card. The cards can thus be used with different hosts that are compatible with one set of contacts but not the other. A cover that is hinged to the card to normally cover one set of contacts can be rotated out of the way by hand when that set of contacts is being used.

Abstract: An integrated non-volatile memory circuit is formed by first growing a thin dielectric layer on a semiconductor substrate surface, followed by depositing a layer of conductive material such as doped polysilicon on this dielectric layer, the conductive material then being separated into rows and columns of individual floating gates. Cell source and drain diffusions in the substrate are continuously-elongated across the rows. Field dielectric deposited between the rows of floating gates provides electrical isolation between the rows. Shallow trenches may be included between rows without interrupting the conductivity of the diffusions along their lengths. A deep dielectric filled trench is formed in the substrate between the array and peripheral circuits as electrical isolation. Various techniques are included that increase the field coupling area between the floating gates and a control gate.

Abstract: A system of Flash EEprom chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.

Abstract: Enclosed re-programmable non-volatile memory cards include at least two sets of electrical contacts to which the internal memory is connected. The two sets of contacts have different patterns, preferably in accordance with two different contact standards such as a memory card standard and that of the Universal Serial Bus (USB). One memory card standard that can be followed is that of the Secure Digital (SD) card. The cards can thus be used with different hosts that are compatible with one set of contacts but not the other. A sleeve that is moveable by hand may be included to expose the set of contacts being used.

Abstract: A non-volatile memory system, such as a flash EEPROM system, is disclosed to be divided into a plurality of blocks and each of the blocks into one or more pages, with sectors of data being stored therein that are of a different size than either the pages or blocks. One specific technique packs more sectors into a block than pages provided for that block. Error correction codes and other attribute data for a number of user data sectors are preferably stored together in different pages and blocks than the user data.

Abstract: A peripheral card having a Personal Computer (“PC”) card form factor and removably coupled externally to a host system is further partitioned into a mother card portion and a daughter card portion. The daughter card is removably coupled to the mother card. In the preferred embodiment, a low cost flash “floppy” is accomplished with the daughter card containing only flash EEPROM chips and being controlled by a memory controller residing on the mother card. Other aspects of the invention includes a comprehensive controller on the mother card able to control a predefined set of peripherals on daughter cards connectable to the mother card; relocation of some host resident hardware to the mother card to allow for a minimal host system; a mother card that can accommodate multiple daughter cards; daughter cards that also operates directly with hosts having embedded controllers; daughter cards carrying encoded data and information for decoding it; and daughter cards with security features.

Abstract: Enclosed re-programmable non-volatile memory cards include at least two sets of electrical contacts to which the internal memory is connected. The two sets of contacts have different patterns, preferably in accordance with two different contact standards such as a memory card standard and that of the Universal Serial Bus (USB). One memory card standard that can be followed is that of the Secure Digital (SD) card. The cards can thus be used with different hosts that are compatible with one set of contacts but not the other. A sleeve that is moveable by hand may be included to expose the set of contacts being used.

Abstract: Enclosed re-programmable non-volatile memory cards include at least two sets of electrical contacts to which the internal memory is connected. The two sets of contacts have different patterns, preferably in accordance with two different contact standards such as a memory card standard and that of the Universal Serial Bus (USB). One memory card standard that can be followed is that of the Secure Digital (SD) card. The cards can thus be used with different hosts that are compatible with one set of contacts but not the other. A cover that is hinged to the card to normally cover one set of contacts can be rotated out of the way by hand when that set of contacts is being used.

Abstract: A very small computer memory card is densely packed with a large number of flash EEPROM integrated circuit chips. A computer memory system provides for the ability to removably connect one or more of such cards with a common controller circuit that interfaces between the memory cards and a standard computer system bus. Alternately, each card can be provided with the necessary controller circuitry and thus is connectable directly to the computer system bus. An electronic system is described for a memory system and its controller within a single memory card. In a preferred physical arrangement, the cards utilize a main circuit board with a plurality of sub-boards attached thereto on both sides, each sub-board carrying several integrated circuit chips.

Abstract: A peripheral card having a Personal Computer (“PC”) card form factor and removably coupled externally to a host system is further partitioned into a mother card portion and a daughter card portion. The daughter card is removably coupled to the mother card. In the preferred embodiment, a low cost flash “floppy” is accomplished with the daughter card containing only flash EEPROM chips and being controlled by a memory controller residing on the mother card. Other aspects of the invention includes a comprehensive controller on the mother card able to control a predefined set of peripherals on daughter cards connectable to the mother card; relocation of some host resident hardware to the mother card to allow for a minimal host system; a mother card that can accommodate multiple daughter cards; daughter cards that also operates directly with hosts having embedded controllers; daughter cards carrying encoded data and information for decoding it; and daughter cards with security features.