Abstract: An embodiment of the invention provides an apparatus that includes: a storage media including a patterned structure, the patterned structure including a first groove, a first stopper in the first groove, wherein the first stopper is configured to interrupt the flow of gas in a section within the first groove.

Abstract: Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure includes a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. Other systems and methods are disclosed as well.

Abstract: Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.

Abstract: An embodiment of the invention provides an apparatus that includes: a storage media including a patterned structure, the patterned structure including a first groove, a first stopper in the first groove, wherein the first stopper is configured to interrupt the flow of gas in a section within the first groove.

Abstract: A hard disk drive has a magnetic media disk comprising a substrate having an axis, and an exchange coupled, bit patterned media on the substrate arranged in a plurality of tracks. Each of the tracks has a pattern of islands extending in an axial direction from the disk. Each island comprises a first layer having a first anisotropy and a first layer radial width, and a second layer on the first layer and having a second anisotropy that is lower than the first anisotropy. The second layer radial width is less than the first layer radial width.

Abstract: Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.

Abstract: Patterned media and associated methods of fabrication are provided in which vertical magnetic grains are grown on a patterned seed layer. The patterned seed layer includes a matrix of islands of a first seed material. Each island of first seed material is separated from other islands by a region of second seed material. The first seed material is selected to initiate growth of magnetic material, and the second seed material is selected to initiate growth of non-magnetic material. Subsequently, magnetic material is grown on the first seed material and non-magnetic material is grown on the second seed material. Deposition may be simultaneously. The magnetic and non-magnetic materials form well-defined vertical columns over the first and second seed materials respectively. Thus, each island behaves as an isolated magnetic unit, which switches independently from its neighbor units, which are magnetically separated by the non-magnetic material.

Abstract: Patterned media and associated methods of fabrication are provided in which vertical magnetic grains are grown on a patterned seed layer. The patterned seed layer includes a matrix of islands of a first seed material. Each island of first seed material is separated from other islands by a region of second seed material. The first seed material is selected to initiate growth of magnetic material, and the second seed material is selected to initiate growth of non-magnetic material. Subsequently, magnetic material is grown on the first seed material and non-magnetic material is grown on the second seed material. Deposition may be simultaneously. The magnetic and non-magnetic materials form well-defined vertical columns over the first and second seed materials respectively. Thus, each island behaves as an isolated magnetic unit, which switches independently from its neighbor units, which are magnetically separated by the non-magnetic material.

Abstract: Patterned media and associated methods of fabrication are provided in which vertical magnetic grains are grown on a patterned seed layer. The patterned seed layer includes a matrix of islands of a first seed material. Each island of first seed material is separated from other islands by a region of second seed material. The first seed material is selected to initiate growth of magnetic material, and the second seed material is selected to initiate growth of non-magnetic material. Subsequently, magnetic material is grown on the first seed material and non-magnetic material is grown on the second seed material. Deposition may be simultaneously. The magnetic and non-magnetic materials form well-defined vertical columns over the first and second seed materials respectively. Thus, each island behaves as an isolated magnetic unit, which switches independently from its neighbor units, which are magnetically separated by the non-magnetic material.

Abstract: A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.

Abstract: A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.

Abstract: A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.

Abstract: A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

Abstract: A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

Abstract: The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head track width are oxidized to essentially remove the magnetic moment of the bias layer material in those central locations. An oxygen diffusion barrier layer is then deposited upon the oxidized central portions of the biasing layer to prevent diffusion or migration of oxygen from the oxidized central regions of the biasing layer. An insulation layer, a second magnetic shield layer and further structures of the magnetic head are subsequently fabricated.

Abstract: A current-perpendicular-to the-plane (CPP) magnetoresistive device has two ferromagnetic layers separated by a nonmagnetic spacer layer with the free ferromagnetic layer having a central region of ferromagnetic material and nonmagnetic side regions formed of one or more oxides of the ferromagnetic material. One type of CPP device is a magnetic tunnel junction (MTJ) magnetoresistive read head in which the lower pinned layer has a width and height greater than the width and height, respectively, of the overlying central region of the upper free layer, with the side regions of the free layer being oxidized and therefore nonmagnetic. The MTJ read head is formed by patterning resist in the shape of the free layer central region over the stack of layers in the MTJ, ion milling or etching the stack down into the free layer, and then exposing the stack to oxygen to oxidize the ferromagnetic material in the side regions not covered by the resist.

Abstract: A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

Abstract: This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.

Abstract: A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

Abstract: A current-perpendicular-to the-plane (CPP) magnetoresistive device has two ferromagnetic layers separated by a nonmagnetic spacer layer with the free ferromagnetic layer having a central region of ferromagnetic material and nonmagnetic side regions formed of one or more oxides of the ferromagnetic material. One type of CPP device is a magnetic tunnel junction (MTJ) magnetoresistive read head in which the lower pinned layer has a width and height greater than the width and height, respectively, of the overlying central region of the upper free layer, with the side regions of the free layer being oxidized and therefore nonmagnetic. The MTJ read head is formed by patterning resist in the shape of the free layer central region over the stack of layers in the MTJ, ion milling or etching the stack down into the free layer, and then exposing the stack to oxygen to oxidize the ferromagnetic material in the side regions not covered by the resist.