Patents by Inventor Ellie Yieh
Ellie Yieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955333Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.Type: GrantFiled: March 22, 2021Date of Patent: April 9, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Jethro Tannos, Bhargav Sridhar Citla, Srinivas D. Nemani, Ellie Yieh, Joshua Alan Rubnitz, Erica Chen, Soham Sunjay Asrani, Nikolaos Bekiaris, Douglas Arthur Buchberger, Jr.
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Publication number: 20220310776Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.Type: ApplicationFiled: March 23, 2021Publication date: September 29, 2022Inventors: Keith Tatseun WONG, Srinivas D. NEMANI, Ellie YIEH, Tony P. CHIANG
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Publication number: 20220301867Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.Type: ApplicationFiled: March 22, 2021Publication date: September 22, 2022Inventors: Jethro TANNOS, Bhargav Sridhar CITLA, Srinivas D. NEMANI, Ellie YIEH, Joshua Alan RUBNITZ, Erica CHEN, Soham Sunjay ASRANI, Nikolaos BEKIARIS, Douglas Arthur BUCHBERGER, JR.
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Publication number: 20220298636Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.Type: ApplicationFiled: March 22, 2021Publication date: September 22, 2022Inventors: Soham Sunjay ASRANI, Joshua Alan RUBNITZ, Bhargav Sridhar CITLA, Srinivas D. NEMANI, Erica CHEN, Nikolaos BEKIARIS, Douglas Arthur BUCHBERGER, JR., Jethro TANNOS, Ellie YIEH
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Patent number: 11410860Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: January 8, 2021Date of Patent: August 9, 2022Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Publication number: 20220230887Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes heating a substrate disposed in an interior volume of a process chamber and having a boron-containing film deposited thereon to a predetermined temperature; and supplying water vapor in a non-plasma state to the interior volume at a predetermined pressure for a predetermined time, while maintaining the substrate at the predetermined temperature to anneal the substrate for the predetermined time and remove the boron-containing film.Type: ApplicationFiled: January 15, 2021Publication date: July 21, 2022Inventors: Meiyee SHEK, Maximillian CLEMONS, Srinivas D. NEMANI, Nikolaos BEKIARIS, Ellie YIEH
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Patent number: 11387071Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.Type: GrantFiled: January 3, 2020Date of Patent: July 12, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Qiwei Liang, Srinivas D Nemani, Ellie Yieh, Douglas Buchberger, Chentsau Chris Ying
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Patent number: 11205589Abstract: Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.Type: GrantFiled: October 6, 2019Date of Patent: December 21, 2021Assignee: APPLIED MATERIALS, INC.Inventors: He Ren, Hao Jiang, Mehul Naik, Srinivas D Nemani, Ellie Yieh
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Publication number: 20210134618Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: January 8, 2021Publication date: May 6, 2021Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Publication number: 20210111222Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.Type: ApplicationFiled: October 15, 2019Publication date: April 15, 2021Inventors: Philip Hsin-hua Li, Toshihiko Miyashita, Ellie Yieh, Srinivas D. Nemani, Seshadri Ramaswami, Nikolaos Bekiaris
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Publication number: 20210104434Abstract: Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.Type: ApplicationFiled: October 6, 2019Publication date: April 8, 2021Inventors: He Ren, Hao Jiang, Mehul Naik, Srinivas D. Nemani, Ellie Yieh
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Publication number: 20210104374Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.Type: ApplicationFiled: January 3, 2020Publication date: April 8, 2021Inventors: Qiwei Liang, Srinivas D. Nemani, Ellie Yieh, Douglas Buchberger, Chentsau Chris Ying
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Patent number: 10964527Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.Type: GrantFiled: May 2, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Biao Liu, Cheng Pan, Erica Chen, Chentsau Ying, Srinivas Nemani, Ellie Yieh
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Patent number: 10943779Abstract: Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.Type: GrantFiled: November 18, 2016Date of Patent: March 9, 2021Assignee: Applied Materials, Inc.Inventors: Ellie Yieh, Ludovic Godet, Srinivas Nemani, Er-Xuan Ping, Gary Dickerson
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Patent number: 10923367Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: GrantFiled: August 21, 2018Date of Patent: February 16, 2021Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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Patent number: 10692734Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.Type: GrantFiled: October 25, 2018Date of Patent: June 23, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Jong Mun Kim, Chentsau Chris Ying, He Ren, Srinivas D. Nemani, Ellie Yieh
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Publication number: 20200135492Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.Type: ApplicationFiled: October 25, 2018Publication date: April 30, 2020Inventors: JONG MUN KIM, CHENTSAU CHRIS YING, HE REN, SRINIVAS D. NEMANI, ELLIE YIEH
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Publication number: 20190393024Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.Type: ApplicationFiled: May 2, 2019Publication date: December 26, 2019Inventors: Jong Mun KIM, Biao LIU, Cheng PAN, Erica CHEN, Chentsau YING, Srinivas NEMANI, Ellie YIEH
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Patent number: 10475655Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.Type: GrantFiled: May 24, 2018Date of Patent: November 12, 2019Assignees: Applied Materials, Inc., The Regents of the University of CaliforniaInventors: Raymond Hung, Namsung Kim, Srinivas Nemani, Ellie Yieh, Jong Choi, Christopher Ahles, Andrew Kummel
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Publication number: 20180358244Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Inventors: Dmitry LUBOMIRSKY, Srinivas NEMANI, Ellie YIEH, Sergey G. BELOSTOTSKIY