Patents by Inventor Ellie Yieh
Ellie Yieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120073501Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.Type: ApplicationFiled: September 29, 2011Publication date: March 29, 2012Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Qiwei Liang, Soonam Park, Kien N. Chuc, Ellie Yieh
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Patent number: 8143174Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.Type: GrantFiled: January 11, 2008Date of Patent: March 27, 2012Assignee: Applied Materials, Inc.Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
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Publication number: 20110014798Abstract: A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.Type: ApplicationFiled: September 27, 2010Publication date: January 20, 2011Applicant: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Ellie Yieh
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Patent number: 7867923Abstract: A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.Type: GrantFiled: October 22, 2007Date of Patent: January 11, 2011Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Ellie Yieh
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Patent number: 7678662Abstract: A memory cell comprises a p-doped substrate with a pair of spaced apart n-doped regions on the substrate that form a source and drain about the channel. A stack of layers on the channel comprises, in sequence, (i) a tunnel oxide layer, (ii) a floating gate, (iii) an inter-gate dielectric, and (iv) a control gate. A polysilicon layer is on the source and drain. A cover layer covering the stack of layers comprises a spacer layer and a pre-metal-deposition layer. Optionally, contacts are used to contact each of the source, drain, and silicide layers, and each have exposed portions. A shallow isolation trench is provided about n-doped regions, the trench comprising a stressed silicon oxide layer having a tensile stress of at least about 200 MPa. The stressed layer reduces leakage of charge held in the floating gate during operation of the memory cell.Type: GrantFiled: December 12, 2006Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Reza Arghavani, Ellie Yieh, Hichem M'Saad
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Publication number: 20090104755Abstract: A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.Type: ApplicationFiled: October 22, 2007Publication date: April 23, 2009Applicant: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Ellie Yieh
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Patent number: 7506654Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.Type: GrantFiled: October 18, 2004Date of Patent: March 24, 2009Assignee: Applied Materials, Inc.Inventors: Shankar N. Chandran, Scott Hendrickson, Gwendolyn D. Jones, Shankar Venkataraman, Ellie Yieh
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Patent number: 7435685Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.Type: GrantFiled: September 13, 2006Date of Patent: October 14, 2008Assignee: Applied Materials, Inc.Inventors: Gerardo A. Delgadino, Yan Ye, Neungho Shin, Yunsang Kim, Li-Qun Xia, Tzu-Fang Huang, Lihua Li Huang, Joey Chiu, Xiaoye Zhao, Fang Tian, Wen Zhu, Ellie Yieh
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Publication number: 20080145998Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.Type: ApplicationFiled: September 13, 2006Publication date: June 19, 2008Applicant: APPLIED MATERIALS, INC.Inventors: GERARDO A. DELGADINO, Yan Ye, Neungho Shin, Yunsang Kim, Li-Qun Xia, Tzu-Fang Huang, Lihua Li Huang, Joey Chiu, Xiaoye Zhao, Fang Tian, Wen Zhu, Ellie Yieh
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Publication number: 20080132087Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.Type: ApplicationFiled: January 11, 2008Publication date: June 5, 2008Applicant: Applied Materials, Inc.Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
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Patent number: 7326657Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.Type: GrantFiled: November 15, 2004Date of Patent: February 5, 2008Assignee: Applied Materials, Inc.Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
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Publication number: 20070298585Abstract: Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.Type: ApplicationFiled: June 20, 2007Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh
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Publication number: 20070289534Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.Type: ApplicationFiled: May 29, 2007Publication date: December 20, 2007Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Qiwei Liang, Soonam Park, Kien Chuc, Ellie Yieh
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Publication number: 20070281106Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.Type: ApplicationFiled: May 29, 2007Publication date: December 6, 2007Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Qiwei Liang, Soonam Park, Kien Chuc, Ellie Yieh
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Publication number: 20070277734Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.Type: ApplicationFiled: May 29, 2007Publication date: December 6, 2007Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Qiwei Liang, Soonam Park, Kien Chuc, Ellie Yieh
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Publication number: 20070212850Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.Type: ApplicationFiled: March 15, 2007Publication date: September 13, 2007Applicant: Applied Materials, Inc.Inventors: Nitin Ingle, Sidharth Bhatia, Won Bang, Zheng Yuan, Ellie Yieh, Shankar Venkatraman
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Publication number: 20070132054Abstract: A memory cell comprises a p-doped substrate with a pair of spaced apart n-doped regions on the substrate that form a source and drain about the channel. A stack of layers on the channel comprises, in sequence, (i) a tunnel oxide layer, (ii) a floating gate, (iii) an inter-gate dielectric, and (iv) a control gate. A polysilicon layer is on the source and drain. A cover layer covering the stack of layers comprises a spacer layer and a pre-metal-deposition layer. Optionally, contacts are used to contact each of the source, drain, and silicide layers, and each have exposed portions. A shallow isolation trench is provided about n-doped regions, the trench comprising a stressed silicon oxide layer having a tensile stress of at least about 200 MPa. The stressed layer reduces leakage of charge held in the floating gate during operation of the memory cell.Type: ApplicationFiled: December 12, 2006Publication date: June 14, 2007Applicant: APPLIED MATERIALSInventors: Reza Arghavani, Ellie Yieh, Hichem M'Saad
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Publication number: 20070087515Abstract: The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Applicant: Applied Materials, Inc.Inventors: Ellie Yieh, Lung-Tien Han, Anchuan Wang, Lin Zhang
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Publication number: 20070037397Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.Type: ApplicationFiled: August 11, 2005Publication date: February 15, 2007Applicant: Applied Materials, Inc.Inventors: Siqing Lu, Qiwei Liang, Canfeng Lai, Robert Chen, Jason Bloking, Irene Chou, Steven Kim, Young Lee, Ellie Yieh
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Publication number: 20070034153Abstract: An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.Type: ApplicationFiled: August 9, 2005Publication date: February 15, 2007Applicant: Applied Materials, Inc.Inventors: Siqing Lu, Qiwei Liang, Irene Chou, Steven Kim, Young Lee, Ellie Yieh, Muhammad Rasheed