Patents by Inventor Emanuele Mandelli
Emanuele Mandelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10757351Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.Type: GrantFiled: September 23, 2018Date of Patent: August 25, 2020Assignee: INVISAGE INC.Inventors: Emanuele Mandelli, Ralph Beaudouin, Aurelien Philippe Bouvier, Dario Clocchiatti, Lionel Barrymore Joseph Barrow, Zachary Michael Beiley
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Patent number: 10735672Abstract: Imaging apparatus (100, 200, 1200) includes a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204), which are arranged in a matrix on the semiconductor substrate and define respective pixels (212) of the apparatus. Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive (1206) is formed over the pixel electrodes. A common electrode (1207), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.Type: GrantFiled: October 19, 2017Date of Patent: August 4, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Jae Park, Carey Tanner, Emanuele Mandelli
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Patent number: 10685999Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.Type: GrantFiled: March 1, 2018Date of Patent: June 16, 2020Assignee: INVISAGE TECHNOLOGIES INC.Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Emanuele Mandelli, Jae Park
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Patent number: 10681296Abstract: In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.Type: GrantFiled: May 24, 2018Date of Patent: June 9, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Emanuele Mandelli, Dario Clocchiatti, Aurelien Philippe Bouvier
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Patent number: 10652486Abstract: Imaging apparatus (100, 200, 300) includes a photosensitive medium (302) configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits (304) is formed on a semiconductor substrate (305). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode (306, 502) in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode (308, 504) in contact with the photosensitive medium at a second location in the pixel. Circuitry (800, 1000) is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.Type: GrantFiled: October 19, 2017Date of Patent: May 12, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Emanuele Mandelli, Zachary M. Beiley, Nikolai E. Bock
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Publication number: 20200084407Abstract: Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.Type: ApplicationFiled: November 20, 2019Publication date: March 12, 2020Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian, Emanuele Mandelli
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Patent number: 10529769Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.Type: GrantFiled: April 15, 2018Date of Patent: January 7, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Jae Park, Emanuele Mandelli
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Patent number: 10516845Abstract: Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.Type: GrantFiled: March 29, 2018Date of Patent: December 24, 2019Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian, Emanuele Mandelli
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Publication number: 20190253643Abstract: Imaging apparatus (1300, 1400, 1500) includes a semiconductor substrate (1302), which includes at least first and second sensing areas (1306, 1308, 1502, 1514) with a predefined separation between the sensing areas. First and second arrays of pixel circuits (1312) are formed respectively on the first and second sensing areas and define respective first and second matrices of pixels. First and second photosensitive films (1314, 1316, 1402) are disposed respectively over the first and second arrays of pixel circuits, and are configured to output photocharge to the pixel circuits in response to radiation incident on the apparatus in different, respective first and second spectral bands.Type: ApplicationFiled: October 19, 2017Publication date: August 15, 2019Inventors: Naveen Kolli, Emanuele Mandelli, Nicola Galante
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Publication number: 20190252455Abstract: Imaging apparatus (100, 200) includes a photosensitive medium (302) configured to convert incident photons into charge carriers. A bias electrode (304) overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits (306) are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel (300) and includes first and second pixel electrodes (316, 318) coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates (326, 328) in respective proximity to the first and second pixel electrodes. Circuitry (700) is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.Type: ApplicationFiled: October 23, 2017Publication date: August 15, 2019Inventors: Andras Pattantyus-Abraham, Nikolai E. Bock, Emanuele Mandelli
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Publication number: 20190253647Abstract: Imaging apparatus (100, 200, 1200) includes a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204), which are arranged in a matrix on the semiconductor substrate and define respective pixels (212) of the apparatus. Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive (1206) is formed over the pixel electrodes. A common electrode (1207), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.Type: ApplicationFiled: October 19, 2017Publication date: August 15, 2019Inventors: Jae Park, Carey Tanner, Emanuele Mandelli
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Publication number: 20190246051Abstract: Imaging apparatus (100, 200, 300) includes a photosensitive medium (302) configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits (304) is formed on a semiconductor substrate (305). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode (306, 502) in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode (308, 504) in contact with the photosensitive medium at a second location in the pixel. Circuitry (800, 1000) is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.Type: ApplicationFiled: October 19, 2017Publication date: August 8, 2019Inventors: Emanuele Mandelli, Zachary M. Beiley, Nikolai E. Bock
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Patent number: 10341571Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.Type: GrantFiled: June 8, 2017Date of Patent: July 2, 2019Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Emanuele Mandelli, David Michael Boisvert, Nikolai Bock
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Patent number: 10250826Abstract: In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.Type: GrantFiled: January 15, 2017Date of Patent: April 2, 2019Assignee: InVisage Technologies, Inc.Inventors: Emanuele Mandelli, Nikolai Bock
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Publication number: 20190037159Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.Type: ApplicationFiled: September 23, 2018Publication date: January 31, 2019Inventors: Emanuele Mandelli, Ralph Beaudouin, Aurelien Philippe Bouvier, Dario Clocchiatti, Lionel Barrymore Joseph Barrow, Zachary Michael Beiley
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Publication number: 20180376091Abstract: In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.Type: ApplicationFiled: May 24, 2018Publication date: December 27, 2018Inventors: Emanuele Mandelli, Dario Clocchiatti, Aurelien Philippe Bouvier
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Publication number: 20180301497Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.Type: ApplicationFiled: April 15, 2018Publication date: October 18, 2018Inventors: Jae Park, Emanuele Mandelli
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Patent number: 10104322Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.Type: GrantFiled: July 31, 2015Date of Patent: October 16, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Emanuele Mandelli, Ralph Beaudouin, Aurelien Philippe Bouvier, Dario Clocchiatti, Lionel Barrymore Joseph Barrow, Zachary Michael Beiley
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Patent number: 10097780Abstract: Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.Type: GrantFiled: June 5, 2015Date of Patent: October 9, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian, Emanuele Mandelli
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Publication number: 20180220097Abstract: Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.Type: ApplicationFiled: March 29, 2018Publication date: August 2, 2018Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian, Emanuele Mandelli