Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.

Abstract: In various embodiments, methods and related apparatuses for scaling down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.

Abstract: Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact. In a first low-power mode, electrical current passing through the top electrical contact is configured to be sensed, and independent currents passing through the plurality of pixel electrodes are configured not to be sensed independently. In a second high-resolution mode, independent currents passing through the plurality of pixel electrodes are configured to be sensed independently. Additional methods and apparatuses are described.

Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.

Abstract: In various embodiments, methods, techniques, and related apparatuses for phase-detect autofocus devices are disclosed. In one embodiment, a phase-detect system includes a first color filter formed over a first pixel and a second pixel formed adjacent to the first pixel with a second color filter being formed over the second pixel. The second color filter has a color different from a color of the first color filter. A micro-lens spans the first pixel and the second pixel, configured to capture a phase difference in spatial frequency information present in an imaged scene. The first pixel and the second pixel are placed adjacent to each other in at least one of a horizontal direction, a vertical direction, and/or a diagonal direction, with an arrangement of the two pixels being replicated at either regular and/or irregular intervals across the sensor. Other methods and apparatuses are disclosed.

Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.

Abstract: Generally discussed herein are imaging devices and corresponding circuitry and methods of using and making the same. An image sensor device may include pixel circuitry, the pixel circuitry comprising a photosensitive material layer, circuitry including first, second, and third electrodes and a storage device, the first electrode on a first surface of the photosensitive material layer and the second and third electrodes on a second surface of the photosensitive material layer, the first surface opposite the second surface, electrical interconnect circuitry electrically coupling the second electrode and the storage device, and a dielectric material situated between the third electrode and the photosensitive material layer.

Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Abstract: Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact. In a first low-power mode, electrical current passing through the top electrical contact is configured to be sensed, and independent currents passing through the plurality of pixel electrodes are configured not to be sensed independently. In a second high-resolution mode, independent currents passing through the plurality of pixel electrodes are configured to be sensed independently. Additional methods and apparatuses are described.

Abstract: In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node.

Abstract: In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.

Abstract: Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact. In a first low-power mode, electrical current passing through the top electrical contact is configured to be sensed, and independent currents passing through the plurality of pixel electrodes are configured not to be sensed independently. In a second high-resolution mode, independent currents passing through the plurality of pixel electrodes are configured to be sensed independently. Additional methods and apparatuses are described.

Abstract: In various embodiments, methods, techniques, and related apparatuses for phase-detect autofocus devices are disclosed. In one embodiment, a phase-detect system includes a first color filter formed over a first pixel and a second pixel formed adjacent to the first pixel with a second color filter being formed over the second pixel. The second color filter has a color different from a color of the first color filter. A micro-lens spans the first pixel and the second pixel, configured to capture a phase difference in spatial frequency information present in an imaged scene. The first pixel and the second pixel are placed adjacent to each other in at least one of a horizontal direction, a vertical direction, and/or a diagonal direction, with an arrangement of the two pixels being replicated at either regular and/or irregular intervals across the sensor. Other methods and apparatuses are disclosed.

Abstract: In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node.

Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.

Abstract: Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact. In a first low-power mode, electrical current passing through the top electrical contact is configured to be sensed, and independent currents passing through the plurality of pixel electrodes are configured not to be sensed independently. In a second high-resolution mode, independent currents passing through the plurality of pixel electrodes are configured to be sensed independently. Additional methods and apparatuses are described.

Abstract: In various embodiments, methods and related apparatuses for scaling down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.

Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.

Abstract: Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.

Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.