Abstract: Method of operating an apparatus which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method is as follows. A substrate to be etched is placed between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments. N bias powers are determined which when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas. Then, the bias power system is used to apply the N bias powers the N cathode segments.

Abstract: A method of and article for determining photomask inspection capabilities. The article comprises a photomask having a first array of a plurality of test pattern shapes that include ordered variations of a first shape variable, from a largest to a smallest dimension, and a second array of a plurality of test pattern shapes, that include the ordered variations of the first shape variable and further include ordered variations of a second shape variable, from a largest to a smallest dimension. The method includes inspecting the first array of test pattern shapes of the photomask in order of the variations of the first shape variable. If at least two consecutive first test pattern shapes in the first array fail an inspection criteria, the failed consecutive first test pattern shapes are marked as failed.

Abstract: An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.

Abstract: A photomask repair method is provided which has the spatial resolution of a focused energy beam process without the corresponding potential for damage to the photomask pattern and underlying transparent substrate. A photomask defect is repaired by first providing a masking film over the photomask pattern. Next, a high spatial resolution focused energy beam repair technique, such as laser ablation, focused ion beam, or electron beam, is used to remove a portion of the masking film which corresponds to an underlying defect in the photomask pattern. After the defect in the photomask pattern has been exposed and the rest of the non-defective photomask pattern is protected by the masking film, a chemical etching process is used to remove the defect which selectively etches the photomask pattern material without harming the underlying substrate. Once the defect has been removed, the masking film is removed.

Abstract: An apparatus (and method for operating the same) which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method includes the steps of: (i) placing a substrate to be etched between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments; (ii) determining N bias powers which, when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas; and (iii) using the bias power system to apply the N bias powers the N cathode segments.

Abstract: A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature.

Abstract: A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask.

Abstract: A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.