Abstract: A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

Abstract: An apparatus for plasma treating workpieces in vacuum includes a stack of plasma chambers (20). Handling of workpieces to and from the plasma chambers of the stack is performed in parallelism by one handling device and through lateral handling openings of the plasma chambers. The handling device is rotatable around an axis parallel to the handling openings of the plasma chambers and comprises transport apparatus simultaneously movable radially with respect to the axis of rotation towards and from the handling openings.