Abstract: Constraint-based methods for determining orientations of material physical properties using an isoparametric shape function are disclosed. In one embodiment, a method of defining an orientation of an material physical property includes defining nonlinear and/or discontinuous design constraints of design values in a geometric domain associated with one or more physical attributes of the material physical property, and translating the nonlinear and/or discontinuous design constraints into continuous, first order design constraints of the design values by applying an isoparametric shape function. The method further includes performing a topology optimization using the continuous, first order design constraints of the design values, and reverse-translating results of the topology optimization back into the geometric domain using the isoparametric shape function. The results of the topology optimization in the geometric domain are indicative of the orientation of the material physical property.

Abstract: An assembly includes at least one heat emitting device and a continuous conformal cooling structure adhering directly to and conforming with surfaces of at least a portion of the at least one heat emitting device. The cooling structure may include a thermally-conductive, electrically-insulative layer adhering directly to surfaces of the at least one heat generating device to provide an electrically nonconductive, continuous, conformal layer covering all such surfaces. An inner metallization layer may be adhered directly to surfaces of at least a portion of the insulative layer. An outer metallization layer may be adhered directly to surfaces of the inner metallization layer to provide a thermally conductive layer covering such surfaces.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: A hybrid bonding layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity, and a ball grid array (BGA) disposed within the MIO layer. The MIO layer and the BGA may be disposed between a pair of bonding layers. The MIO layer and the BGA each have a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the hybrid bonding layer can be transient liquid phase bonded between a substrate and a semiconductor device. The pair of bonding layers may include a first pair of bonding layers with a melting point above the TLP sintering temperature and a second pair of bonding layers with a melting point below the TLP sintering temperature.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: A thermal stress compensation layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity disposed between a pair of bonding layers. The thermal stress compensation layer has a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the MIO layer can be transient liquid phase bonded between a metal substrate and a semiconductor device. The pair of bonding layers may comprise a first pair of bonding layers and a second pair of bonding layers with the first pair of bonding layers disposed between the MIO layer and the second pair of bonding layers. The first pair of bonding layers may have a melting point above the TLP sintering temperature and the second pair of bonding layers may have a melting point below the TLP sintering temperature.

Abstract: A cooling bond layer for a power electronics assembly is provided. The cooling bond layer includes a first end, a second end spaced apart from the first end, a metal matrix extending between the first end and the second end, and a plurality of micro-channels extending through the metal matrix from the first end to the second end. The plurality of micro-channels are configured for a cooling fluid to flow through and remove heat from the cooling bond layer. In some embodiments, the plurality of micro-channels are cylindrical shaped micro-channels. In such embodiments, the plurality of micro-channels may have a generally constant average inner diameter along a thickness of the cooling bond layer. In the alternative, the plurality of micro-channels may have a graded average inner diameter along a thickness of the cooling bond layer. In other embodiments, the plurality of micro-channels may have a wire mesh layered structure.

Abstract: A wireless in-wheel electric motor assembly having a wheel, an electric motor disposed within the wheel, the electric motor including a stator and a rotor, a receiving coil disposed within the wheel and operable to receive wirelessly transmitted energy, a first converter disposed within the wheel, electrically coupled to the receiving coil and operable to convert the wirelessly transmitted energy from the receiving coil into direct current, an inverter circuit disposed within the wheel, electrically coupled to the conversion circuit and the electric motor, and operable to power the electric motor. The wireless in-wheel electric motor assembly further includes a cooling system disposed within the wheel that includes a micro pump operable to pump coolant, a fluid line operable to pass the coolant proximate at least one of the conversion circuit and the inverter circuit, and a heat exchanger operable to receive heated coolant and dissipate heat to the environment.

Abstract: An assembly includes at least one heat emitting device and a continuous conformal cooling structure adhering directly to and conforming with surfaces of at least a portion of the at least one heat emitting device. The cooling structure may include a thermally-conductive, electrically-insulative layer adhering directly to surfaces of the at least one heat generating device to provide an electrically nonconductive, continuous, conformal layer covering all such surfaces. An inner metallization layer may be adhered directly to surfaces of at least a portion of the insulative layer. An outer metallization layer may be adhered directly to surfaces of the inner metallization layer to provide a thermally conductive layer covering such surfaces.

Abstract: A power electronics assembly includes a substrate, a semiconductor device and a metal inverse opal (MIO) bonding layer positioned between and bonded to the substrate and the semiconductor device. A first electrode is disposed on a first surface, a second electrode is disposed on a second surface, and a third electrode is disposed on a third surface. The first surface may be a top surface of the semiconductor device, the second surface may be a bottom surface of the semiconductor device, the third surface may be spaced apart from the bottom surface of the semiconductor device, and the second electrode is in electrical communication with the third electrode through the MIO bonding layer. A cooling fluid circuit with a cooling fluid inlet, a cooling fluid outlet and a cooling fluid path through the MIO bonding layer may be included.

Abstract: A cooling bond layer for a power electronics assembly is provided. The cooling bond layer includes a first end, a second end spaced apart from the first end, a metal matrix extending between the first end and the second end, and a plurality of micro-channels extending through the metal matrix from the first end to the second end. The plurality of micro-channels are configured for a cooling fluid to flow through and remove heat from the cooling bond layer. In some embodiments, the plurality of micro-channels are cylindrical shaped micro-channels. In such embodiments, the plurality of micro-channels may have a generally constant average inner diameter along a thickness of the cooling bond layer. In the alternative, the plurality of micro-channels may have a graded average inner diameter along a thickness of the cooling bond layer. In other embodiments, the plurality of micro-channels may have a wire mesh layered structure.

Abstract: A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Abstract: A hybrid bonding layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity, and a ball grid array (BGA) disposed within the MIO layer. The MIO layer and the BGA may be disposed between a pair of bonding layers. The MIO layer and the BGA each have a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the hybrid bonding layer can be transient liquid phase bonded between a substrate and a semiconductor device. The pair of bonding layers may include a first pair of bonding layers with a melting point above the TLP sintering temperature and a second pair of bonding layers with a melting point below the TLP sintering temperature.

Abstract: A power electronics assembly includes a substrate, a semiconductor device and a metal inverse opal (MIO) bonding layer positioned between and bonded to the substrate and the semiconductor device. A first electrode is disposed on a first surface, a second electrode is disposed on a second surface, and a third electrode is disposed on a third surface. The first surface may be a top surface of the semiconductor device, the second surface may be a bottom surface of the semiconductor device, the third surface may be spaced apart from the bottom surface of the semiconductor device, and the second electrode is in electrical communication with the third electrode through the MIO bonding layer. A cooling fluid circuit with a cooling fluid inlet, a cooling fluid outlet and a cooling fluid path through the MIO bonding layer may be included.

Abstract: Devices configured to direct heat flow are disclosed, as well as methods of forming thereof. A device may include a self-assembling heat flow object. The self-assembling heat flow object may include a material having one or more self-assembling properties that cause the material to react to an environmental stimulus and one or more thermal pathways. An application of the environmental stimulus causes the self-assembling heat flow object to deploy and arrange the one or more thermal pathways for directing thermal energy to one or more locations.

Abstract: Modular cooling assemblies are provided for simultaneously cooling both a power module and a vehicle motor. Each cooling assembly may include a first cooling structure defining at least one major surface in thermal communication with the vehicle motor. A second cooling structure may be provided, defining at least one major surface in thermal communication with a power module. An interlayer structure may be provided, configured to couple the first cooling structure to the second cooling structure. The first cooling structure, the second cooling structure, and the interlayer structure are positioned in a stacked arrangement and configured to provide a flow of coolant fluid from a fluid inlet defined in first cooling structure, through the interlayer structure, and to at least one heat sink feature of the second cooling structure. The coolant fluid is then directed through a fluid outlet defined in the second cooling structure.

Abstract: Cooling loops and vehicles including cooling loops include a power module, a cooling loop including a cooler thermally coupled to the power module, a working fluid housed within the cooler, where the working fluid absorbs thermal energy from the power module, a heat exchanger in fluid communication with the cooler, a pump in fluid communication with the heat exchanger and the cooler, and a vehicle component thermally coupled to the cooling loop, where the working fluid from the cooler is selectively directed to the vehicle component.

Abstract: A hybrid vehicle including one or more in-wheel motors, a power electronics supplying power to the one or more in-wheel motors, and a Rankine cycle system is described. The Rankine cycle system includes a pump driving a working fluid through the Rankine cycle system, a heat exchanger receiving the working fluid from to the pump and connected to the power electronics to cool the power electronics, an evaporator heating the working fluid received from the heat exchanger utilizing heat from an exhaust gas from an engine, an expander receiving the working fluid from the evaporator, and a radiator cooling the working fluid received from the expander.

Abstract: Electronic assemblies for thermoelectric generation are disclosed. In one embodiment, an electronic assembly includes a substrate having a first surface and a second surface, and a conductive plane and a plurality of thermal guide traces position on the first surface of the substrate. The conductive plane includes a plurality of arms radially extending from a central region. The plurality of thermal guide traces surrounds the conductive plane, and is shaped and positioned to guide heat flux present on or within the substrate toward the central region of the conductive plane. The electronic assembly may also include a thermoelectric generator device thermally coupled to the central region of the conductive plane, and a plurality of heat generating devices coupled to the second surface of the substrate.

Abstract: The electric vehicle including one or more in-wheel motors, a battery electrically coupled to one or more in-wheel motors, a power electronics including a DC-AC inverter, a AC-DC inverter, and a boost converter that receives DC power from the battery and supplies AC power to the one or more in-wheel motors, and a generator electrically coupled to the battery via the power electronics. Further, it includes a Rankine cycle system including a pump, a first valve having an input, a first output, and a second output connected to the pump, the generator, and the one or more in-wheel motors, respectively. A second valve having a first input connects to the generator, a second input connects the one or more in-wheel motors and an output delivers the working fluid to the power electronics. An expander receives the working fluid from at least one of the power electronics.