Abstract: Various embodiments herein relate to methods and apparatus for etching a recessed feature in a material on a substrate. For example, the methods may include (a) flowing a gas mixture into a processing chamber, where the gas mixture includes an etch component and a passivation component, and where the passivation component includes particular elements and/or species and/or is provided under particular conditions; (b) generating a plasma from the gas mixture in the processing chamber; and (c) exposing the substrate to the plasma and etching the recessed feature in the material on the substrate. In many cases, the material being etched on the substrate includes dielectric material and/or an electrically conductive material.

Abstract: Systems and methods for controlling a pulse width of a square pulse waveform are described. One of the methods includes generating the square pulse waveform having a plurality of states. Each of the plurality of states includes a series of square pulses. The method includes modifying the pulse width of each of the plurality of states to modify a rate of processing a substrate.

Abstract: START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORUM ETCH GAST INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER

Abstract: A method for etching features in a stack comprising a silicon oxide layer below a mask is provided. A substrate support for supporting the stack in an etch chamber is cooled to a temperature below 0° C. An etch gas comprising a halogen containing component and a phosphorous containing component is provided. A plasma is generated from the etch gas. A bias is provided to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the mask.

Abstract: Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25 C or lower.

Abstract: Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

Abstract: A method of etching recessed features in stack with a silicon containing layer below a mask and over a wafer on a substrate support is provided. An etch gas comprising a carbon source, a fluorine source, and an organochloride source selected from the group consisting of carbon tetrachloride (CCI4), CxHyClz (where x>0 and z>0), and combinations thereof, is provided. The etch gas is formed into a plasma. The stack is exposed to the plasma to etch recessed features into the stack.

Abstract: Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

Abstract: Various embodiments herein relate to methods. apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along the sidewalls. In some cases. the protective coating is deposited using molecular layer deposition techniques. The protective coating may be deposited using particular reactants that result in relatively complete sidewall coating at relatively low temperatures. In some implementations. one or more of the reactants include an aldehyde functional group. In some implementations. one or more of the reactants include an isocyanate functional group.

Abstract: A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.

Abstract: Various embodiments herein relate to methods and apparatus for etching a recessed feature in a material on a substrate. For example, the methods may include (a) flowing a gas mixture into a processing chamber, where the gas mixture includes an etch component and a passivation component, and where the passivation component includes particular elements and/or species and/or is provided under particular conditions; (b) generating a plasma from the gas mixture in the processing chamber; and (c) exposing the substrate to the plasma and etching the recessed feature in the material on the substrate. In many cases, the material being etched on the substrate includes dielectric material and/or an electrically conductive material.

Abstract: High aspect ratio features are formed in a substrate using etching and deposition processes. A partially etched feature is formed by exposure to plasma in a plasma etch chamber. A metal-based liner is subsequently deposited in the partially etched feature using the same plasma etch chamber. The metal-based liner is robust and prevents lateral etch in subsequent etching operations. The metal-based liner may be deposited at temperatures or pressures comparable to temperatures or pressures for etch processes. The metal-based liner may be localized in certain portions of the partially etched feature. Etching proceeds within the feature after deposition without lateral etching in regions where the metal-based liner is deposited.

Abstract: Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.

Abstract: Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25C or lower.

Abstract: Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

Abstract: Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

Abstract: Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

Abstract: A core assembly for a casting system according to an exemplary aspect of the present disclosure includes, among other things, a core that includes a body and at least one hole formed through the body and a spacer that extends through the at least one hole. The spacer includes a stud portion and a chaplet portion configured to abut a surface of the body that circumscribes the at least one hole.