Abstract: A method of forming a feature in a stack comprising a dielectric material on a substrate is provided. An etch plasma is generated from an etch gas, exposing the stack to the etch plasma and partially etching the feature in the stack. The stack is primed. A protective film is deposited on sidewalls of the feature by repeating for a plurality of cycles the steps of exposing the stack to a first reactant, allowing the first reactant to adsorb onto the stack, and exposing the stack to a second reactant, wherein the first and second reactants react with one another to form the protective film over the stack. The etching, priming, and depositing a protective film are repeated until the feature is etched to a final depth.

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

Abstract: A cooling scheme for a blade outer air seal includes a perimeter cooling arrangement configured to convectively cool a perimeter of the blade outer air seal, and a core cooling arrangement configured to cool a central portion of the blade outer air seal through impingement cooling and to provide film cooling to an inner diameter face of the blade outer air seal.

Abstract: An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets.

Abstract: A method for etching features into a silicon containing layer comprising performing a plurality of cycles in a plasma processing chamber is provided. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a precursor into the plasma processing chamber to form a self-limiting monolayer, wherein the precursor comprises a head group component and a tail group component, wherein the tail group component comprises fluorine and carbon, and stopping the flow of the precursor into the plasma processing chamber. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, into the plasma processing chamber, creating a plasma from the activation gas, providing an activation bias to cause ion bombardment of the self-limiting monolayer, wherein the ion bombardment activates the fluorine from the tail group component to etch the silicon containing layer, and stopping the flow of the activation gas.

Abstract: A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.

Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.

Abstract: An airfoil includes an airfoil body that has a geometrically segmented coating section. The geometrically segmented coating section includes a wall having an outer side. The outer side has an array of cells, and there is a coating disposed in the array of cells.

Abstract: An airfoil includes an airfoil section that defines an airfoil profile. The airfoil section includes a distinct panel that forms a portion of the airfoil profile. The panel has a geometrically segmented coating section. The geometrically segmented coating section includes a wall that has an outer side. The outer side includes an array of cells, and there is a coating disposed in the array of cells.

Abstract: Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

Abstract: Thermal lifting members for blade outer air seal supports of gas turbine engines include a hollow body defining a thermal cavity therein, at least one inlet fluid connector fluidly connected to the thermal cavity configured to supply hot fluid to the thermal cavity from a fluid source, at least one outlet fluid connector fluidly connected to the thermal cavity configured to allow the hot fluid to exit the thermal cavity, and at least one lifting hook configured to engage with a blade outer air seal support, wherein the thermal lifting member is configured to thermally expand outward when hot fluid is passed through the thermal cavity such that during thermal expansion the at least one lifting hook forces the blade outer air seal support to move outward.

Abstract: A utensil dispenser that selectively dispenses a lowermost utensil from a stack of utensils. A main housing retains plural dispensing chambers. A selectively operable dispensing mechanism has a movable support structure, an actuated support structure, and an actuation structure retained by a manual actuator. First and second arms form the movable support structure with distal portions that are in proximity to support the lowermost utensil when in a first condition and that are separated when in a second condition. A shelf member retained by the actuator forms the actuated support structure to be selectively interposed between the lowermost and second lowermost utensil. An actuation structure, such as opposed ramp surfaces, is retained by the actuator to separate the first and second arms on actuation of the actuator. When the actuator is actuated, the stack of utensils, except for the lowermost utensil, is supported so that the lowermost utensil is dispensed.

Abstract: An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets.

Abstract: A method of manufacturing an airfoil. The method includes fixing the airfoil in a workpiece space, detecting a position of the airfoil in the workpiece space using a force-sensing element, and removing material from the airfoil to reduce a dimension of the airfoil. In various embodiments, detecting the position of the airfoil includes moving the force-sensing element across a surface of the airfoil. For example, the surface of the airfoil may be a first surface, wherein removing material from the airfoil to reduce the dimension of the airfoil comprises removing material from a second surface of the airfoil opposite the first surface. Removing material from the second surface of the airfoil may be performed without moving the force-sensing element across the second surface of the airfoil.

Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques.

Abstract: A communications system for synchronizing control signals between subsystems coupled to a process module used for processing a substrate. A distributed controller coupled to the subsystems is configured to initiate process steps, each step having a step period. A distributed clock module includes a master clock having a clock speed including clock cycles, each clock cycle having a duration that is pre-correlated to a feedback loop within which synchronized control signals are delivered to and received from the subsystems by the distributed clock module. A predefined number of clock cycles is assigned by the distributed clock module for performing a corresponding number of feedback loops for transitioning between process steps. The predefined number of clock cycles are restricted to a fraction of the step period.

Abstract: A method for etching features into a porous low-k dielectric etch layer is provided. A plurality of cycles is performed in a plasma processing chamber. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon and/or hydrofluorocarbon gas, creating a plasma in the plasma processing chamber using the deposition gas, depositing a fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising a noble gas and a carbon etching additive, creating a plasma in the plasma processing chamber using the activation gas, providing an activation bias in the plasma processing chamber, wherein the activation bias causes the etching of the low-k dielectric layer, with consumption of the fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the activation gas.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant, with a coolant temperature below ?20° C. An etch gas comprising a metal containing component, a carbon containing component, and a halogen containing component is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched in the stack with respect to the patterned mask.

Abstract: A section of a gas turbine engine includes a rotor blade designed to rotate about an axis. The section also includes a case positioned radially outward from the rotor blade and extending circumferentially about the axis. The section also includes a control ring being annular, positioned radially inward from the case and designed to move radially relative to the case. The section also includes a segmented blade outer air seal (BOAS) including a plurality of BOAS segments each being positioned radially outward from the rotor blade, movably coupled to the control ring, and designed to move circumferentially relative to each other such that a circumferential gap between each of the plurality of BOAS segments changes in size in response to a temperature change in the section of the gas turbine engine.