Abstract: A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.

Abstract: An unguarded Schottky barrier diode structure, which may be part of an integrated device, is provided that blocks the formation of a parasitic MIS diode at the diode's perimeter. The diode is formed in a semiconductive material which may comprise silicon. The portion of the semiconductive material at which the diode is formed may be called a diode portion of the semiconductive material. A highly conductive buried layer is provided under the diode portion of the semiconductive material. The highly conductive buried layer may comprise TiW, Ti, or TiN. The highly conductive buried layer extends laterally to a conductive plug extending to an upper conductive layer of the integrated or other device. A laterally extended silicide region is provided, which extends laterally to a perimeter. The silicide region comprises a lower semiconductor contact area on top of and in contact with the semiconductive material. The lower semiconductor contact area extends laterally to the perimeter.

Abstract: A method of determining the degree of calibration of an RTP chamber (1) includes providing a test wafer having a deposited sichrome layer (22) of sheet resistance Rsi on an oxide layer (21) formed on a silicon substrate (20). The test wafer is annealed in the RTP chamber for a selected duration at a selected anneal temperature which is measured by the a permanent thermocouple or pyrometer (8). The sheet resistance of the annealed sichrome is measured, and a sheet resistance change ?Rs=Rsi?Rsf is computed. The “actual” value of the anneal temperature is determined from predetermined characterizing information relating ?Rs to a range of values of anneal temperature. The RTP chamber is re-calibrated if in accordance with the value of ?Rs if the difference between the “actual” value of the anneal temperature and the value measured by the permanent thermocouple or pyrometer exceeds an acceptable error.

Abstract: A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration.

Abstract: A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.

Abstract: The present invention provides a capacitor 300, a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the capacitor 300 includes a first conductive plate 320 located over a semiconductor substrate 310, wherein the first conductive plate 320 has a second conductive plate 340 located thereover. The capacitor 300, in the same embodiment, further includes a dielectric layer 330 located between the first conductive plate 320 and the second conductive plate 340, wherein the dielectric layer 330 includes a Group 17 element.

Abstract: An apparatus for providing test containers to a test position, includes a track adapted to guide test containers to a test position, a magazine adapted for holding a plurality of test containers and operatively engaged with the track to provide test containers to the track, and a drive mechanism adapted for moving individual test containers from the magazine and along the track to the test position. The magazine for serially providing a plurality of test containers, includes a housing forming a chamber adapted for holding a multiplicity of elongated test containers in parallel and adjacent alignment along a row, a stop element formed at one end of the housing in parallel alignment with the test containers, and a biasing mechanism adapted for physically biasing the row of test containers against the stop element, wherein the one end of the housing including an opening located adjacent to the stop element and adapted to allow test containers to be removed from the chamber.

Abstract: A diverter for a conveying system which includes a belt conveyor moving along a longitudinal conveying path for transporting flat articles, including a longitudinal conveying path which includes a series of moving belts for moving flat articles therealong. There is a bin for collecting diverted flat articles. A hinged diverter gate is provided above or just forward of the bin for providing a diverting surface of moving belts which, in a first position, allows flat articles to move therealong, and, in a second position, allows the flat articles to move into the bin into which the flat articles are diverted. The bin is located beneath the conveying path and the articles are moved into the bin by the moving belts when the diverter is in its second position. The gate is hinged at a point which is different than the axis of the drive rollers so that the movement of the belts assists the upward movement of the gate when a flat article is to be diverted into the bin below.