Abstract: A high performance PNP lateral bipolar transistor is described, incorporating at least two trenches extending from the upper P.sup.- surface of a semiconductor substrate almost to a buried N.sup.+ layer. The floor of one trench is heavily N-doped to establish a connection between the buried N.sup.+ layer and an N.sup.- diffusion in the walls of the trench. When the trenches are backfilled with P.sup.+ polysilicon a lateral PNP is formed having a buried base contact.

Abstract: An apertured thermoplastic fabric is formed by extruding, in the form of a film, a molten thermoplastic polymer having a secant modulus of no greater than 50,000 psi, embossing the film in a nip provided between a smooth surfaced roll and a patterned roll, wherein the patterned roll includes a plurality of discrete, raised projections disposed in a pattern and each of which includes a sharp distal end; applying sufficient pressure at the nip of the patterned and smooth surfaced rolls for causing a plurality of small apertures to be formed in the extruded film in substantially the same pattern as the pattern of discrete, raised projections; orienting the apertured film in both the cross-machine direction and in the machine-direction, and thereafter embossing the oriented film on at least one surface with a plurality of raised members spaced closer to each other than the spaces between the apertures in the oriented film, to thereby provide a matte-type finish on at least one surface.

Abstract: An apertured thermoplastic fabric is formed by extruding a molten thermoplastic polymer film having a secant modulus of no greater than 50,000 psi, embossing the film in a nip provided between a smooth surfaced roll and a patterned roll, wherein the patterned roll includes a plurality of discrete, raised projections disposed in a pattern and each of which includes a sharp distal end; applying sufficient pressure at the nip of the patterned and smooth surfaced rolls for causing a plurality of small apertures to be formed in the extruded film in substantially the same pattern as the pattern of discrete, raised projections; orienting the apertured film in both the cross-machine direction and in the machine-direction, and thereafter embossing the oriented film on at least one surface with a plurality of raised members spaced closer to each other than the spaces between the apertures in the oriented film, to thereby provide a matte-type finish on at least one surface.

Abstract: A high performance PNP lateral bipolar transistor is described, incorporating at least two trenches extending from the upper P.sup.- surface of a semiconductor substrate almost to a buried N.sup.+ layer. The floor of one trench is heavily N-doped to establish a connection between the buried N.sup.+ layer and an N.sup.- diffusion in the walls of the trench. When the trenches are backfilled with P.sup.+ polysilicon a lateral PNP is formed having a buried base contact.

Abstract: Disclosed is an extruded, low density, non-outgassing ehtylenic polymer foam containing 30-85% open cells and the remainder closed cells and having an essentially integral surface. The foam posseses superior compression recovery and lower compression resistance when compared with similarly comprised ehtylenic closed cell foams and superior moisture resistance and handling characteristics when compared to open cell foams.

Abstract: Disclosed is an extruded, low density, non-outgassing ethylenic polymer foam containing 30-85% open cells and the remainder closed cells and having an essentially integral surface. The foam possesses superior compression recovery and lower compression resistance when compared with similarly comprised ethylenic closed cell foams and superior moisture resistance and handling characteristics when compared to open cell foams.

Abstract: Disclosed is an extruded, low density, non-outgassing ethylenic polymer foam containing 30-85% open cells and the remainder closed cells and having an essentially integral surface. The foam possesses superior compression recovery and lower compression resistance when compared with similarly comprised ethylenic closed cell foams and superior moisture resistance and handling characteristics when compared to open cell foams.

Abstract: A method of making apertured films including the step of perforating films of thermoplastic materials with embossing rolls engraved with patterns which form small slits or incipient slits in the sheet. The patterns are such that the design on the roll includes lands, or raised areas, which cross lands of the opposing roll at an acute angle. The perforated or partially perforated film formed may then be further processed by orientation, uniaxial or biaxial, simultaneous or sequential; by heat treatment; or both to modify the porosity, hole size, or other properties as desired.

Abstract: A method of forming a low resistance path, e.g., to serve as a guard ring, in a silicon semiconductor device is disclosed.An opening is defined in an upper protective layer and an underlying lower protective layer. Normally these layers are silicon nitride and silicon dioxide, respectively. The lower protective layer is isotropically wet etched so that the upper protective layer overhangs the lower protective layer and protects a part of the silicon wafer surface.A first impurity is implanted in the exposed silicon wafer surface except in the annular area protected by the upper protective layer overhang.A silicon dioxide layer is grown on the entire exposed surface of the silicon wafer which is inherently thicker over the area where the impurity has been implanted and inherently thinner over the annular area where the impurity has not been implanted. The upper protective layer is then preferably removed.

Abstract: A nonwoven texturized fabric is produced by embossing a molten film of a polymer blend of high density polyethylene and polystyrene with hexagonal shaped bosses, biaxially stretching the thus embossed film to produce an openwork net and then texturizing the net with special texturizing rollers to flatten and deform some of the bosses and bend some of the bands at an angle to the plane of the fabric to produce an essentially irregular pattern of bosses connected by bands.