Abstract: In a first aspect, a small lot size lithography bay is provided. The small lot size lithography bay includes (1) a plurality of lithography tools; and (2) a small lot size transport system adapted to transport small lot size substrate carriers to the lithography tools. Each small lot size substrate carrier is adapted to hold fewer than 13 substrates. Numerous other aspects are provided.

Abstract: In a first aspect, an apparatus is provided for opening a substrate carrier door of a substrate carrier. The apparatus includes a supporting member adapted to (1) support the substrate carrier door at a load port; (2) allow removal of the door from the substrate carrier; and (3) pivot the removed door below a bottom surface of the substrate carrier. Numerous other aspects are provided.

Abstract: In a first aspect, a substrate loading station is served by a conveyor which continuously transports substrate carriers. A substrate carrier handler that is part of the substrate loading station operates to exchange substrate carriers with the conveyor while the conveyor is in motion. A carrier exchange procedure may include moving an end effector of the substrate carrier handler at a velocity that substantially matches a velocity of the conveyor. A balancing mass is coupled directly or indirectly to a frame on which the substrate carrier handler is mounted and is adapted to accelerate in a direction opposite to the direction of end effector acceleration, as the end effector accelerates. Thus, inertial loads may be substantially balanced, and frame vibration reduced, despite potentially high rates of acceleration. Numerous other aspects are provided.

Abstract: In a first aspect, a first method of calibrating a substrate carrier loader to a moving conveyor is provided. The first method includes the steps of (1) providing a substrate carrier loader adapted to load substrate carriers onto a moving conveyor; (2) aligning the substrate carrier loader to the moving conveyor; and (3) calibrating the substrate carrier loader to the moving conveyor. Numerous other aspects are provided.

Abstract: A kinematic pin and a substrate carrier adapted to deter dislodgment of the substrate carrier from the kinematic pin are provided. A shear member on the kinematic pin interacts with a shear feature of the substrate carrier to deter lateral movement of the substrate carrier relative to the kinematic pin. A substrate carrier handler that employs the kinematic pin is also provided.

Abstract: In a first aspect, a first apparatus is provided for inter-station overhead transport of a substrate carrier. The first apparatus includes (1) an overhead transport mechanism; (2) a substrate carrier support suspended from the overhead transport mechanism and adapted to receive and support a substrate carrier; and (3) a stabilization apparatus adapted to limit rocking of the substrate carrier and substrate carrier support relative to the overhead transport mechanism. Numerous other aspects are provided.

Abstract: In a first aspect, a wafer loading station adapted to exchange wafer carriers with a wafer carrier transport system comprises a biasing element adapted to urge the end effector of the wafer loading station away from a moveable conveyor of the wafer carrier transport system upon the occurrence of a unscheduled event such as a power failure or an emergency shutdown. In a second aspect, an uninterruptible power supply commands a controller to cause the wafer carrier handler to retract the end effector from the wafer carrier transport system upon the occurrence of the unscheduled event, and provides the power necessary for the same. Numerous other aspects are provided.

Abstract: A movable portion of a substrate carrier handler is extended into a transport path along which a substrate carrier transport system transports a substrate carrier, respective kinematic coupling events are detected between corresponding interface elements of the movable portion and the substrate carrier, respective signals are generated in response thereto, and an alignment offset between the substrate carrier and the substrate carrier transport system is determined based on the signals. A movable portion matches an elevation, position, and/or a speed/velocity of a substrate carrier moving along the transport path. Sensors for detecting kinematic coupling and generating signals in response thereto are provided on the movable portion. An end effector includes a support with interface elements and sensors for detecting kinematic coupling and generating respective signals.

Abstract: A break-away mounting system for a continuous-motion, high-speed position conveyor system is disclosed. A support cradle may be suspended from a conveyor belt such that the support cradle maintains a fixed position and orientation relative to at least one point on the conveyor belt without inducing appreciable stress on the conveyor belt, the support cradle, or the coupling between the conveyor belt and the support cradle. The mount may include a leading rotatable bearing attached to the support cradle which may releasably engage a first key attached to the conveyor belt, the rotatable bearing adapted to accommodate rotational forces applied to the support cradle by the conveyor belt. The mount may also include a slide bearing attached to the support cradle which may releasably engage a second key attached to the conveyor belt, the slide bearing adapted to accommodate longitudinal forces applied to the support cradle by the conveyor belt.

Abstract: In at least one aspect, the invention provides an electronic device fabrication facility (Fab) that uses small lot carriers that may be transparently integrated into an existing Fab that uses large lot carriers. A manufacturing execution system (MES) may interact with the inventive small lot Fab as if the small lot Fab is any other Fab component in an existing large lot Fab without requiring knowledge of how to control small lot Fab components (e.g., beyond specifying a processing recipe). A small lot Fab according to the present invention may encapsulate the small lot Fab's internal use of small lot components and present itself to a large lot Fab's MES as if the small lot Fab is a component that uses large lot carriers.

Abstract: A substrate carrier is counterbalanced so that the center of gravity of the carrier is aligned with the center of gravity of any substrates that the carrier may hold. In some embodiments, substrate supports disposed within the carrier are adapted to hold substrates such that the center of gravity of the substrates are aligned with the center of gravity of the carrier. A flange may be coupled to the carrier so as to provide a means to apply a net lifting or support force to the carrier that is aligned with the center of gravity of the carrier.

Abstract: A substrate loading station includes a load/unload mechanism which unloads substrates or substrate carriers from a conveyor and loads substrates or substrate carriers onto the conveyor. The load/unload mechanism includes a rotary arm that rotates to match the speed of the conveyor to lift a substrate or substrate carrier off the conveyor or to lower a substrate or substrate carrier into engagement with the conveyor.

Abstract: In a first aspect, a first apparatus is provided for use in supporting a substrate carrier. The first apparatus includes an overhead transfer flange adapted to couple to a substrate carrier body and an overhead carrier support. The overhead transfer flange has a first side and a second side opposite the first side that is wider than the first side. Numerous other aspects are provided.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.