Abstract: Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

Abstract: Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

Abstract: A semiconducting structure includes a thinned silicon substrate (110), a silicide layer (120) over the thinned silicon substrate, a metal layer (130) over the silicide layer, a solder interface layer (140) over the metal layer, and a cap layer (150) over the solder interface layer. The thinned silicon substrate is no thicker than approximately 500 micrometers. The silicide layer is formed using a rapid thermal processing procedure that locally heats the interface between the metal layer and the silicon substrate but causes no more than negligible thermal impact to other areas of the silicon wafer.

Abstract: A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Abstract: An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate.

Abstract: A method and apparatus for a backside metallization of a wafer is provided. The wafer comprised of a first substance is bent by creating tension on a backside and creating compression on a front side prior to deposition of a thin film of a second substance. After deposition, the wafer is released and the thin film deposited on the wafer exhibits less tensile stress than if the thin film was deposited on a flat wafer.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer.

Abstract: Methods and apparatus to dicing and/or drilling of wafers are described. In one embodiment, an electromagnetic radiation beam (e.g., a relatively high intensity, ultra-short laser beam) may be used to dice and/or drill a wafer. Other embodiments are also described.

Abstract: A semiconducting structure includes a thinned silicon substrate (110), a silicide layer (120) over the thinned silicon substrate, a metal layer (130) over the silicide layer, a solder interface layer (140) over the metal layer, and a cap layer (150) over the solder interface layer. The thinned silicon substrate is no thicker than approximately 500 micrometers. The silicide layer is formed using a rapid thermal processing procedure that locally heats the interface between the metal layer and the silicon substrate but causes no more than negligible thermal impact to other areas of the silicon wafer.

Abstract: An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate.

Abstract: An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate.

Abstract: Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

Abstract: A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Abstract: Disclosed are various embodiments of a method of forming vias for backside connections in a wafer stack, wherein the vias are formed by non-thermal laser ablation. Other embodiments are described an claimed.