Patents by Inventor Eric J. Strang
Eric J. Strang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11745202Abstract: A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.Type: GrantFiled: July 15, 2015Date of Patent: September 5, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Martin Kent, Eric J. Strang
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Publication number: 20150314313Abstract: A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.Type: ApplicationFiled: July 15, 2015Publication date: November 5, 2015Inventors: Martin Kent, Eric J. Strang
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Patent number: 9139910Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.Type: GrantFiled: June 11, 2010Date of Patent: September 22, 2015Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Jacques Faguet, Eric J. Strang
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Patent number: 9115429Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.Type: GrantFiled: August 22, 2014Date of Patent: August 25, 2015Assignee: Tokyo Electron LimitedInventors: Martin Kent, Eric J. Strang
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Patent number: 8927907Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).Type: GrantFiled: November 30, 2011Date of Patent: January 6, 2015Assignee: Tokyo Electron LimitedInventors: Steven T. Fink, Eric J. Strang
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Publication number: 20140360979Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.Type: ApplicationFiled: August 22, 2014Publication date: December 11, 2014Inventors: Martin Kent, Eric J. Strang
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Patent number: 8877000Abstract: A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).Type: GrantFiled: February 26, 2002Date of Patent: November 4, 2014Assignee: Tokyo Electron LimitedInventor: Eric J. Strang
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Patent number: 8852347Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.Type: GrantFiled: June 11, 2010Date of Patent: October 7, 2014Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Jacques Faguet, Eric J. Strang
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Patent number: 8828185Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.Type: GrantFiled: May 2, 2010Date of Patent: September 9, 2014Assignee: Tokyo Electron LimitedInventors: Martin Kent, Eric J. Strang
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Patent number: 8562743Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.Type: GrantFiled: May 2, 2011Date of Patent: October 22, 2013Assignee: Tokyo Electron LimitedInventor: Eric J. Strang
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Patent number: 8296687Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.Type: GrantFiled: September 30, 2003Date of Patent: October 23, 2012Assignee: Tokyo Electron LimitedInventors: Eric J. Strang, Andrej Mitrovic
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Patent number: 8207476Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.Type: GrantFiled: December 4, 2009Date of Patent: June 26, 2012Assignee: Tokyo Electron LimitedInventors: Yuji Tsukamoto, Eric J. Strang
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Publication number: 20120083127Abstract: A method for forming a fine pattern on a substrate includes providing a substrate including a material with an initial pattern formed thereon and having a first line width, performing a self-limiting oxidation and/or nitridation process on a surface of the material and thereby forming an oxide, a nitride, or an oxynitride film on a surface of the initial pattern, and removing the oxide, nitride, or oxynitride film. The method further includes repeating the formation and removal of the oxide, nitride, or oxynitride film to form a second pattern having a second line width that is smaller than the first line width of the initial pattern. The patterned material can contain silicon, a silicon-containing material, a metal, or a metal-nitride, and the self-limiting oxidation process can include exposure to vapor phase ozone, atomic oxygen generated by non-ionizing electromagnetic (EM) radiation, atomic nitrogen generated by ionizing or non-ionizing EM radiation, or a combination thereof.Type: ApplicationFiled: September 30, 2010Publication date: April 5, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Robert D. Clark, Eric J. Strang
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Publication number: 20120067866Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).Type: ApplicationFiled: November 30, 2011Publication date: March 22, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Steven T. FINK, Eric J. Strang
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Patent number: 8092602Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).Type: GrantFiled: December 20, 2007Date of Patent: January 10, 2012Assignee: Tokyo Electron LimitedInventors: Steven T. Fink, Eric J. Strang
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Publication number: 20110305831Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.Type: ApplicationFiled: June 11, 2010Publication date: December 15, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Eric M. LEE, Jacques FAGUET, Eric J. STRANG
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Publication number: 20110303145Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.Type: ApplicationFiled: June 11, 2010Publication date: December 15, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Eric M. LEE, Jacques FAGUET, Eric J. STRANG
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Patent number: 8073667Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.Type: GrantFiled: September 30, 2003Date of Patent: December 6, 2011Assignee: Tokyo Electron LimitedInventors: Eric J. Strang, Andrej Mitrovic
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Patent number: 8050900Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.Type: GrantFiled: September 30, 2003Date of Patent: November 1, 2011Assignee: Tokyo Electron LimitedInventors: Andrej S. Mitrovic, Eric J. Strang
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Patent number: 8038834Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.Type: GrantFiled: April 6, 2010Date of Patent: October 18, 2011Assignees: Tokyo Electron Limited, International Business Machines Corporation (“IBM”)Inventors: Merritt Funk, David V. Horak, Eric J. Strang, Lee Chen