Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract: A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.

Abstract: A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Abstract: A method of and apparatus for providing tunable gas injection in a plasma processing system (10, 10?). The apparatus includes a gas injection manifold (50) having a pressurizable plenum (150) and an array of adjustable nozzle units (250), or an array of non-adjustable nozzles (502, 602), through which gas from the plenum can flow into the interior region (40) of a plasma reactor chamber (14) capable of containing a plasma (41). The adjustable nozzle units include a nozzle plug (160) arranged within a nozzle bore (166). A variety of different nozzle units are disclosed. The nozzle plugs are axially translatable to adjust the flow of gas therethrough. In one embodiment, the nozzle plugs are attached to a plug plate (154), which is displacable relative to an injection plate (124) via displacement actuators (170) connecting the two plates. The displacement actuators are controlled by a displacement actuator control unit (180), which is in electronic communication with a plasma processing system control unit (80).

Abstract: An equipment status monitoring system and method of operating thereof. The equipment status monitoring system includes first and second microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator (35). A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. A control system (80) is connected to the detector (70) that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment (10).

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal.

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract: A plasma processing system including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract: A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128).

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, &tgr;i, &PHgr;i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, &tgr;i is the on-time of the RF power for the ith RF feed line, &PHgr;i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.

Abstract: A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

Abstract: A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal.

Abstract: A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continous flow shower head injection orifices is described. The continous flow shower head injection orifices introduce a continous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract: A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).