Abstract: The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.

Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.

Abstract: Thermal 3-D microstructuring of photonic structures is provided by depositing laser energy by non-linear absorption into a focal volume about each point of a substrate to be micromachined at a rate greater than the rate that it diffuses thereout to produce a point source of heat in a region of the bulk larger than the focal volume about each point that structurally alters the region of the bulk larger than the focal volume about each point, and by dragging the point source of heat thereby provided point-to-point along any linear and non-linear path to fabricate photonic structures in the bulk of the substrate. Exemplary optical waveguides and optical beamsplitters are thermally micromachined in 3-D in the bulk of a glass substrate. The total number of pulses incident to each point is controlled, either by varying the rate that the point source of heat is scanned point-to-point and/or by varying the repetition rate of the laser, to select the mode supported by the waveguide or beamsplitter to be micromachined.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm.

Abstract: In one aspect, the present invention provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with discontinuous metal coating characterized by one or more metalized surface region and a plurality of surface gaps.

Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.

Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: Methods and systems for absorbing infrared light, and for emitting current are described. A sample, such as a sample containing mainly silicon, is microstructured by at least one laser pulse to produce cone-like structures on the exposed surface. Such microstructuring enhances the infrared absorbing, and current emission properties of the sample.

Abstract: The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.

Abstract: Methods and systems for absorbing infrared light, and for emitting current are described. A sample, such as a sample containing mainly silicon, is microstructured by at least one laser pulse to produce cone-like structures on the exposed surface. Such microstructuring enhances the infrared absorbing, and current emission properties of the sample.

Abstract: The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

Abstract: The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.