Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.

Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.

Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.

Abstract: A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar.

Abstract: A component of a processing chamber in a substrate processing system includes a base material comprising aluminum, the base material having one or more surfaces, a diffusion barrier layer formed on the surfaces of the base material, wherein the diffusion barrier layer includes magnesium and fluorine (F), and a coating formed on the surfaces. The diffusion barrier layer is arranged between the surfaces and the coating and the coating includes fluorine.

Abstract: A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

Abstract: A component for use in a plasma processing chamber is provided. A component body has a plasma facing surface. A coating is over the plasma facing surface, wherein the coating is formed by a method comprising spraying a surface of the component body with a spray formed from atomic layer deposition (ALD) coated particles to form the coating.

Abstract: A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

Abstract: Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A method for conditioning a plasma processing chamber including a chuck is provided. The method comprises a plurality of cycles, wherein each cycle comprises cleaning an interior of the plasma processing chamber and the chuck and forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck. The silicon oxide based coating has a first layer and a second layer.

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

Abstract: A method for coating a component of a plasma processing chamber is provided. An electrolytic oxidation coating is formed over a surface of the component, wherein the electrolytic oxidation coating has a plurality of pores, wherein the electrolytic oxidation coating has a thickness and at least some of the plurality of pores extends through the thickness of the electrolytic oxidation coating. An atomic layer deposition is deposited on the electrolytic oxidation coating. The atomic layer deposition comprises a plurality of cycles, where each cycle comprises flowing a first reactant, wherein the first reactant forms a first reactant layer in the pores of the electrolytic oxidation coating, wherein the first reactant layer extends through the thickness of the electrolytic oxidation coating, stopping the flow of the first reactant, flowing a second reactant, wherein the second reactant reacts with the first reactant layer, and stopping the flow of the second reactant.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.

Abstract: A substrate holder includes a base plate, a bond layer disposed over the base plate, and a ceramic layer disposed over the bond layer. The ceramic layer has a top surface including an area configured to support a substrate. A number of temperature measurement electrical devices are attached to the ceramic layer. Electrically conductive traces are embedded within the ceramic layer and positioned and routed to electrically connect with one or more of electrical contacts of the number of temperature measurement electrical devices. Electrical wires are disposed to electrically contact the electrically conductive traces. The electrical wires extend from the ceramic layer through the bond layer and through the base plate to a control circuit.

Abstract: A method of forming a substrate support in a substrate processing system includes forming at least one ceramic layer and arranging a plurality of thermal elements adjacent to the ceramic layer in one or more thermal zones. Each of the thermal zones includes at least one of the thermal elements and each of the thermal elements includes a first resistive material having a positive thermal coefficient of resistance (TCR) and a second resistive material having a negative TCR. The second resistive material is electrically connected to the first resistive material. At least one of the first resistive material and the second resistive material of each of the thermal elements is electrically connected to a power supply to receive power and each of the thermal elements heats a respective one of the thermal zones based on the received power.

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, at least one of a heating layer and a ceramic layer arranged on the baseplate, and a plurality of heating elements provided within the at least one of the heating layer and the ceramic layer. The plurality of heating elements includes a first material having a first electrical resistance. Wiring is provided through the baseplate in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone to a first heating element of the plurality of heating elements. The first heating element is arranged in a second zone of the plurality of heating zones and the electrical connection includes a second material having a second electrical resistance that is less than the first electrical resistance.