Abstract: A substrate support for supporting a substrate in a substrate processing system includes a plurality of thermal elements. The thermal elements are arranged in one or more thermal zones, and each of the thermal zones includes at least one of the thermal elements. Each of the thermal elements includes a first resistive material having a positive thermal coefficient of resistance and a second resistive material having a negative thermal coefficient of resistance. The second resistive material is electrically connected to the first resistive material. At least one of the first resistive material and the second resistive material of each of the thermal elements is electrically connected to a power supply to receive power, and each of the thermal elements heats a respective one of the thermal zones based on the received power. At least one ceramic layer is arranged adjacent to the thermal elements.

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a multi-plane heater such as a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate. The multi-plane heater includes at least one pair of vertically offset heating elements connected in series or parallel to control heating output in a heating zone on the substrate support. The thermal control elements can be powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones.

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and wiring provided through the baseplate, the heating layer, and into the ceramic layer in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone.

Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.

Abstract: Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.

Abstract: A method of determining thermal stability of an upper surface of a substrate support assembly in a plasma processing apparatus includes: before processing of at least one substrate in the plasma processing apparatus and while powering an array of thermal control elements of the substrate support assembly to achieve a desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording pre-process temperature data of the substrate support assembly; after the processing of the at least one substrate in the plasma processing apparatus and while powering the array of thermal control elements to achieve the desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording post-process temperature data; comparing the post-process temperature data to the pre-process temperature data; and determining whether the post-process temperature data is within a predetermined tolerance range of the pre-process temperature data.

Abstract: A system for controlling a temperature of a wafer processing substrate includes memory that stores first data indicative of first temperature responses of at least one first thermal control element. The first data corresponds to the first temperature responses as observed when a first control parameter of the at least one first thermal control element is maintained at a first predetermined first value. A first controller receives a setpoint temperature for the wafer processing substrate and maintains the first control parameter of the at least one first thermal control element at a second value based on the received setpoint temperature. A second controller retrieves the first data from the memory, calculates second data indicative of temperature non-uniformities associated with the wafer processing substrate based on the first data and the second value, and controls a plurality of second thermal control elements based on the calculated second data.

Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.

Abstract: A substrate processing system includes a processing chamber, a pedestal arranged in the processing chamber, and an electrostatic chuck (ESC) arranged on the pedestal. The ESC contains a printed circuit board assembly (PCBA) made up of a plurality of printed circuit board layers to mount circuitry that controls operation of the ESC. One or more of the printed circuit board layers includes a heater layer having one or more metal traces, which may be copper, to cover some or all of a surface of the heater layer sufficiently to provide heat to one or more of the remaining printed circuit board layers, to maintain the circuitry within a predetermined temperature range. The heat may be conducted directly among the various other printed circuit board layers, or may be conducted through vias in various ones of the printed circuit board layers.

Abstract: A substrate processing system includes a processing chamber, a pedestal arranged in the processing chamber, and an electrostatic chuck (ESC) arranged on the pedestal. The ESC contains a printed circuit board assembly (PCBA) made up of a plurality of printed circuit board layers to mount circuitry that controls operation of the ESC. One or more of the printed circuit board layers includes a heater layer having one or more metal traces, which may be copper, to cover some or all of a surface of the heater layer sufficiently to provide heat to one or more of the remaining printed circuit board layers, to maintain the circuitry within a predetermined temperature range. The heat may be conducted directly among the various other printed circuit board layers, or may be conducted through vias in various ones of the printed circuit board layers.

Abstract: A substrate holder includes a base plate, a bond layer disposed over the base plate, and a ceramic layer disposed over the bond layer. The ceramic layer has a top surface including an area configured to support a substrate. A number of temperature measurement electrical devices are attached to the ceramic layer. Electrically conductive traces are embedded within the ceramic layer and positioned and routed to electrically connect with one or more of electrical contacts of the number of temperature measurement electrical devices. Electrical wires are disposed to electrically contact the electrically conductive traces. The electrical wires extend from the ceramic layer through the bond layer and through the base plate to a control circuit.

Abstract: A substrate holder includes a base plate, a bond layer disposed over the base plate, and a ceramic layer disposed over the bond layer. The ceramic layer has a top surface including an area configured to support a substrate. A number of temperature measurement electrical devices are attached to the ceramic layer. Electrically conductive traces are embedded within the ceramic layer and positioned and routed to electrically connect with one or more of electrical contacts of the number of temperature measurement electrical devices. Electrical wires are disposed to electrically contact the electrically conductive traces. The electrical wires extend from the ceramic layer through the bond layer and through the base plate to a control circuit.

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

Abstract: A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. The thermal control element controller is further configured to, prior to the substrate being loaded onto the substrate support, determine at least one of a temperature of the substrate support and a temperature of the substrate and, based on the processing temperature and the at least one of the temperature of the substrate support and the temperature of the substrate, control the thermal control element to adjust the temperature of the substrate support to a setpoint temperature that is different than the processing temperature.

Abstract: A method for forming a protective coating for a component of plasma processing chamber is provided. A first ceramic coating is plasma sprayed over a surface of the component, wherein the first ceramic coating has pores. A sealant is applied over the first ceramic coating wherein sealant fills the pores of the first ceramic coating. The sealant is cured. A second ceramic coating is deposited over the first ceramic coating and sealant, wherein the second ceramic coating is thinner than and more dense than the first ceramic coating, wherein the depositing the second ceramic coating is by at least one of aerosol depositing or atomic layer deposition or sol-gel deposition.

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

Abstract: A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. The thermal control element controller is further configured to, prior to the substrate being loaded onto the substrate support, determine at least one of a temperature of the substrate support and a temperature of the substrate and, based on the processing temperature and the at least one of the temperature of the substrate support and the temperature of the substrate, control the thermal control element to adjust the temperature of the substrate support to a setpoint temperature that is different than the processing temperature.