Patents by Inventor Eric Peng

Eric Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9054130
    Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes providing a silicon substrate, forming a gate stack over the silicon substrate, performing a biased dry etching process to the substrate to remove a portion of the silicon substrate, thereby forming a recess region in the silicon substrate, performing a non-biased etching process to the recess region in the silicon substrate, thereby forming a bottle-neck shaped recess region in the silicon substrate, and epi-growing a semiconductor material in the bottle-neck shaped recess region in the silicon substrate. An embodiment may include a biased dry etching process including adding HeO2 gas and HBr gas. An embodiment may include performing a first biased dry etching process including N2 gas and performing a second biased dry etching process not including N2 gas.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: June 9, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eric Peng, Chao-Cheng Chen, Ming-Hua Yu, Ying Hao Hsieh, Tze-Liang Lee, Chii-Horng Li, Syun-Ming Jang, Shih-Hao Lo
  • Publication number: 20110049567
    Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes providing a silicon substrate, forming a gate stack over the silicon substrate, performing a biased dry etching process to the substrate to remove a portion of the silicon substrate, thereby forming a recess region in the silicon substrate, performing a non-biased etching process to the recess region in the silicon substrate, thereby forming a bottle-neck shaped recess region in the silicon substrate, and epi-growing a semiconductor material in the bottle-neck shaped recess region in the silicon substrate. An embodiment may include a biased dry etching process including adding HeO2 gas and HBr gas. An embodiment may include performing a first biased dry etching process including N2 gas and performing a second biased dry etching process not including N2 gas.
    Type: Application
    Filed: July 22, 2010
    Publication date: March 3, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Eric Peng, Chao-Cheng Chen, Ming-Hua Yu, Ying Hao Hsieh, Tze-Liang Lee, Chii-Horng Li, Syun-Ming Jang, Shih-Hao Lo
  • Patent number: 7338760
    Abstract: The present invention relates to an apparatus comprising a substrate having at least one assay station. The at least one assay station has at least a first assay station channel and at least a second assay station channel and the first and second assay station channels each separately being in communication with the at least one assay station. The apparatus has an arrangement of at least first and second multipurpose channels in communication with the first and second assay station channels, respectively. The first multipurpose channel and first assay station channel have internal surface characteristics conducive to conduction of a sample solution therethrough. There is at least one sample fluid inlet in communication with the at least first multipurpose channel, and at least one isolation-medium inlet in communication with the at least first and second multipurpose channels. The at least one second multipurpose channel has an internal surface portion non-conducive to conduction of said sample solution.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: March 4, 2008
    Assignees: NTU Ventures Private Limited, Defence Science Organization
    Inventors: Haiqing Gong, Eric Peng Huat Yap, Longqing Chen
  • Publication number: 20030138819
    Abstract: The present invention relates to diagnostic methods utilizing an apparatus comprising a substrate having at least one assay station. The at least one assay station has at least a first assay station channel and at least a second assay station channel and the first and second assay station channels each separately being in communication with the at least one assay station. The apparatus has an arrangement of at least first and second multi-purpose channels in communication with the first and second assay station channels, respectively. The first multipurpose channel and first assay station channel have internal surface characteristics conducive to conduction of a sample solution therethrough. There is at least one sample fluid inlet in communication with the at least first multi-purpose channel, and at least one isolation-medium inlet in communication with the at least first and second multi-purpose channels.
    Type: Application
    Filed: October 24, 2002
    Publication date: July 24, 2003
    Inventors: Haiqing Gong, Eric Peng Huat Yap, Teck Choon Ayi
  • Publication number: 20030138941
    Abstract: The present invention relates to an apparatus comprising a substrate having at least one assay station. The at least one assay station has at least a first assay station channel and at least a second assay station channel and the first and second assay station channels each separately being in communication with the at least one assay station. The apparatus has an arrangement of at least first and second multipurpose channels in communication with the first and second assay station channels, respectively. The first multipurpose channel and first assay station channel have internal surface characteristics conducive to conduction of a sample solution therethrough. There is at least one sample fluid inlet in communication with the at least first multipurpose channel, and at least one isolation-medium inlet in communication with the at least first and second multipurpose channels. The at least one second multipurpose channel has an internal surface portion non-conducive to conduction of said sample solution.
    Type: Application
    Filed: October 24, 2002
    Publication date: July 24, 2003
    Inventors: Haiqing Gong, Eric Peng Huat Yap, Longqing Chen