Patents by Inventor Eric R. Fossum

Eric R. Fossum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220244918
    Abstract: Some embodiments provide methods and apparatus for quantum random number generation based on a single bit or multi bit Quanta Image Sensor (QIS) providing single-photon counting over a time interval for each of an array of pixels of the QIS, wherein random number data is generated based on the number of photons counted over the time interval for each of the pixels.
    Type: Application
    Filed: September 9, 2021
    Publication date: August 4, 2022
    Applicants: ID QUANTIQUE SA, TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Emna Amri, Yacine Felk, Damien Stucki, Jiaju Ma, Eric R. Fossum
  • Patent number: 11251215
    Abstract: Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed in the first surface of the semiconductor substrate, and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially beneath the transfer gate. The transfer gate is spaced away from the floating diffusion such that an intervening semiconductor region provides a potential barrier to charge flow from beneath the transfer gate to the floating diffusion. The transfer gate is operable to control a vertical pump gate to selectively transfer charge from the charge accumulation/storage region to the floating diffusion by pumping charge from the buried charge accumulation/storage region underlying the transfer gate, over the potential barrier, and out to the floating diffusion, such that full charge transfer can be achieved without overlapping the edge of the transfer gate with the floating diffusion.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: February 15, 2022
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Jiaju Ma, Eric R. Fossum
  • Patent number: 11128831
    Abstract: An imaging system has an imager comprising a plurality of jots. A readout circuit is in electrical communication with the imager. The readout circuit can be configured to facilitate the formation of an image by defining neighborhoods of the jots, wherein a local density of exposed jots within a neighborhood is used to generate a digital value for a pixel of the image.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: September 21, 2021
    Assignee: Rambus Inc.
    Inventor: Eric R. Fossum
  • Patent number: 10978504
    Abstract: Some embodiments of the present disclosure are directed to an image sensor pixel that is configured for gateless reset of a floating diffusion. Some embodiments are directed to an image sensor comprising a plurality of pixels, at least one pixel comprising a floating diffusion formed in a semiconductor substrate; a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion; and a reset drain formed in the semiconductor substrate and spaced away from the floating diffusion by an intervening semiconductor region having a dopant type opposite to the dopant type of the reset drain and the floating diffusion, wherein the reset drain is configured to selectively reset the electrostatic potential of the floating diffusion in response to a voltage pulse applied to the reset drain.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: April 13, 2021
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Eric R. Fossum, Jiaju Ma
  • Publication number: 20210029321
    Abstract: Disclosed herein are image apparatuses comprising a frontside surface, a backside surface, a storage region (e.g., a storage node or a floating diffusion node), the storage region being situated closer to the frontside surface than to the backside surface, a storage well situated between the backside surface and the storage region, and a doping region situated between the storage region and the storage well. An impurity type of the doping region is opposite an impurity type of the storage well. A lateral area of the storage well is greater than or equal to a lateral area of the storage region, and no portion of a lateral perimeter of the storage region extends outside of a lateral perimeter of the storage well.
    Type: Application
    Filed: July 25, 2020
    Publication date: January 28, 2021
    Applicant: Trustees of Dartmouth College
    Inventors: Jiaju MA, Eric R. FOSSUM
  • Publication number: 20200396404
    Abstract: Some embodiments provide an apparatus and method wherein the non-linearity of the response of a multi-bit QIS is controllable (e.g., selectively variable) by dynamically choosing the bit depth n during A/D conversion, and/or later (i.e., post-conversion) by firmware and/or software.
    Type: Application
    Filed: December 31, 2019
    Publication date: December 17, 2020
    Applicant: TRUSTEES OF DARTMOUTH COLLEGE
    Inventor: Eric R. Fossum
  • Patent number: 10840291
    Abstract: Some embodiments provide a color image sensor and color image sampling method that uses multiple-layer pixels and is capable of producing color images without using absorption color filters (e.g., such as employed in conventional CFAs). In accordance with some embodiments of the color image sensor device and color image sampling method, frequency-dependent reflectors are incorporated between the photodetection layers of multiple-layer (e.g., two layer) pixels.
    Type: Grant
    Filed: December 25, 2018
    Date of Patent: November 17, 2020
    Assignee: Trustees of Dartmouth College
    Inventors: Leo Anzagira, Eric R. Fossum
  • Patent number: 10674098
    Abstract: An imaging system has an imager comprising a plurality of jots. A readout circuit is in electrical communication with the imager. The readout circuit can be configured to facilitate the formation of an image by defining neighborhoods of the jots, wherein a local density of exposed jots within a neighborhood is used to generate a digital value for a pixel of the image.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: June 2, 2020
    Assignee: Rambus Inc.
    Inventor: Eric R. Fossum
  • Patent number: 10652497
    Abstract: Some embodiments provide an image sensor that includes (i) quanta image sensor having an array of jots and configured for spatial and temporal oversampling, and (ii) a polarization filter array monolithically integrated with the quanta image sensor, so as to provide for a polarization image sensor. The image sensor may also include a color filter array.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 12, 2020
    Assignee: Trustees of Dartmouth College
    Inventors: Eric R. Fossum, Leo Anzagira
  • Publication number: 20200105821
    Abstract: Some embodiments provide an image sensor pixel comprising a junction field effect transistor (JFET) and a floating diffusion configured to act as the gate of the JFET. An image sensor may comprise a plurality of pixels, at least one pixel comprising floating diffusion region formed in a semiconductor substrate, a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion, and a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region.
    Type: Application
    Filed: July 2, 2019
    Publication date: April 2, 2020
    Applicant: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Jiaju Ma, Leo Anzagira, Eric R. Fossum
  • Patent number: 10523886
    Abstract: The present disclosure relates generally to apparatus and methods for image sensing, and, more particularly, to a multi-bit quanta image sensor (QIS) having a controllable (e.g., adjustably variable) exposure response characteristic. Some embodiments provide an apparatus and method wherein the non-linearity of the response of a multi-bit QIS is controllable (e.g., selectively variable) by dynamically choosing the bit depth n during AID conversion, and/or later (i.e., post-conversion) by firmware and/or software.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: December 31, 2019
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventor: Eric R. Fossum
  • Publication number: 20190371852
    Abstract: Some embodiments provide a color image sensor and color image sampling method that uses multiple-layer pixels and is capable of producing color images without using absorption color filters (e.g., such as employed in conventional CFAs). In accordance with some embodiments of the color image sensor device and color image sampling method, frequency-dependent reflectors are incorporated between the photodetection layers of multiple-layer (e.g., two layer) pixels.
    Type: Application
    Filed: December 25, 2018
    Publication date: December 5, 2019
    Applicant: DARTMOUTH COLLEGE
    Inventors: Leo Anzagira, Eric R. Fossum
  • Patent number: 10473798
    Abstract: Embodiments include a device, comprising: a column line; a plurality of pixels; each pixel coupled to the column line; a comparator having an input coupled to the column line and configured to compare a signal from the column line to a threshold; and control logic coupled to the pixels and configured to selectively couple each pixel to the column line after a sampling period for each pixel.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: November 12, 2019
    Assignees: Varex Imaging Corporation, The Trustees of Dartmouth College
    Inventors: Donald B. Hondongwa, Eric R. Fossum
  • Publication number: 20190259794
    Abstract: Some embodiments of the present disclosure are directed to an image sensor pixel that is configured for gateless reset of a floating diffusion. Some embodiments are directed to an image sensor comprising a plurality of pixels, at least one pixel comprising a floating diffusion formed in a semiconductor substrate; a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion; and a reset drain formed in the semiconductor substrate and spaced away from the floating diffusion by an intervening semiconductor region having a dopant type opposite to the dopant type of the reset drain and the floating diffusion, wherein the reset drain is configured to selectively reset the electrostatic potential of the floating diffusion in response to a voltage pulse applied to the reset drain.
    Type: Application
    Filed: May 7, 2019
    Publication date: August 22, 2019
    Applicant: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Eric R. Fossum, Jiaju Ma
  • Publication number: 20190252428
    Abstract: Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed in the first surface of the semiconductor substrate, and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially beneath the transfer gate. The transfer gate is spaced away from the floating diffusion such that an intervening semiconductor region provides a potential barrier to charge flow from beneath the transfer gate to the floating diffusion. The transfer gate is operable to control a vertical pump gate to selectively transfer charge from the charge accumulation/storage region to the floating diffusion by pumping charge from the buried charge accumulation/storage region underlying the transfer gate, over the potential barrier, and out to the floating diffusion, such that full charge transfer can be achieved without overlapping the edge of the transfer gate with the floating diffusion.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Applicant: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: JIAJU MA, Eric R. Fossum
  • Publication number: 20190212985
    Abstract: Some embodiments provide methods and apparatus for quantum random number generation based on a single bit or multi bit Quanta Image Sensor (QIS) providing single-photon counting over a time interval for each of an array of pixels of the QIS, wherein random number data is generated based on the number of photons counted over the time interval for each of the pixels.
    Type: Application
    Filed: May 5, 2017
    Publication date: July 11, 2019
    Applicants: ID QUANTIQUE SA, TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Emna Amri, Yacine Felk, Damien Stucki, Jiaju Ma, Eric R. Fossum
  • Patent number: 10349015
    Abstract: Some embodiments provide an image sensor color filter array pattern that mitigates and/or minimizes the impact of optical and carrier crosstalk on color reproduction accuracy and/or signal-to-noise, the color filter array comprising a plurality of kernels, wherein each kernel has an identical configuration of color filter elements comprising primary color filter elements corresponding to at least three respective different primary colors, and a plurality of secondary color filter elements. A respective one of the secondary color filter elements is disposed as a nearest neighbor to and between every pair of primary color filter elements of different colors in the kernel, with the respective secondary color filter element representing a secondary color that is a combination of the different colors of the primary color filter elements that are nearest neighbors to the respective secondary color filter element.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: July 9, 2019
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Eric R. Fossum, Leo Anzagira
  • Patent number: 10340305
    Abstract: Some embodiments provide an image sensor pixel comprising a junction field effect transistor (JFET) and a floating diffusion configured to act as the gate of the JFET. An image sensor may comprise a plurality of pixels, at least one pixel comprising a floating diffusion region formed in a semiconductor substrate, a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion, and a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: July 2, 2019
    Assignee: DARTMOUTH COLLEGE
    Inventors: Jiaju Ma, Leo Anzagira, Eric R. Fossum
  • Patent number: 10319776
    Abstract: Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed in the first surface of the semiconductor substrate, and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially beneath the transfer gate. The transfer gate is spaced away from the floating diffusion such that an intervening semiconductor region provides a potential barrier to charge flow from beneath the transfer gate to the floating diffusion. The transfer gate is operable to control a vertical pump gate to selectively transfer charge from the charge accumulation/storage region to the floating diffusion by pumping charge from the buried charge accumulation/storage region underlying the transfer gate, over the potential barrier, and out to the floating diffusion, such that full charge transfer can be achieved without overlapping the edge of the transfer gate with the floating diffusion.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: June 11, 2019
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Jiaju Ma, Eric R. Fossum
  • Patent number: 10283539
    Abstract: Some embodiments of the present disclosure are directed to an image sensor pixel that is configured for gateless reset of a floating diffusion. Some embodiments are directed to an image sensor comprising a plurality of pixels, at least one pixel comprising a floating diffusion formed in a semiconductor substrate; a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion; and a reset drain formed in the semiconductor substrate and spaced away from the floating diffusion by an intervening semiconductor region having a dopant type opposite to the dopant type of the reset drain and the floating diffusion, wherein the reset drain is configured to selectively reset the electrostatic potential of the floating diffusion in response to a voltage pulse applied to the reset drain.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: May 7, 2019
    Assignee: DARTMOUTH COLLEGE
    Inventors: Eric R. Fossum, Jiaju Ma