Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 ?. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

Abstract: A source vessel weight monitoring assembly for use in reactor systems to provide real-time and direct measurements of the availability of source or process materials from a source vessel. The assembly includes one or more force or load sensors, such as load cells, positioned between a bottom wall of the source vessel and a support element for the vessel (e.g., a base of a source vessel enclosure). The sensors are positioned to at least partially support the vessel, and a signal conditioning element processes the output electrical signals from the sensors, then a controller processes the output signals from the signal conditioning components with a conversion factor, for example, to determine a current weight of the source vessel and process material (e.g., solid, liquid, or gaseous precursor) stored therein. The controller uses this weight to calculate the amount of available process material or chemistry in the source vessel.

Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.

Abstract: A reactor system with stuck lift pin detection. The system includes a reaction chamber, a susceptor for supporting wafers in an interior space of the reaction chamber, and an elevator for raising and lowering the susceptor in the interior space. Further, the system includes a lift pin supported by and extending vertically through the susceptor to travel between an up and a down position with movements of the susceptor by the elevator, and a landing pad is provided in the system for receiving a base of the lift pin when the lift pin is in the down position. Significantly, the system also includes a sensor assembly with a sensor positioned at least partially within the interior space of the reaction chamber. An output signal of the sensor is indicative of whether the lift pin is sticking or seizing during travel through the susceptor.

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.

Abstract: Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

Abstract: Methods for depositing a titanium aluminum carbide (TiAlC) film structure on a substrate are disclosed. The methods may include: depositing a first TiAlC film on a substrate utilizing a first cyclical deposition process, and depositing a second TiAlC film over the first TiAlC film utilizing a second cyclical deposition process. Semiconductor structures including titanium aluminum carbide (TiAlC) film structures deposited by the methods of the disclosure are also disclosed.

Abstract: A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Abstract: Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 ?. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.