Patents by Inventor Eric Shero
Eric Shero has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9167625Abstract: A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.Type: GrantFiled: November 14, 2012Date of Patent: October 20, 2015Assignee: ASM IP Holding B.V.Inventors: Eric Shero, Michael Halpin, Jerry Winkler
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Patent number: 9139906Abstract: Methods for doping a substrate surface or the interface between two thin films by atomic layer deposition process (ALD) are provided. By blocking some of the available binding sites for a dopant precursor with a blocking reactant, the concentration and uniformity of dopant deposited can be controlled. The blocking reactant may be introduced prior to introduction of the dopant precursor in the ALD process, or the blocking reactant and the dopant precursor can be introduced simultaneously.Type: GrantFiled: February 27, 2008Date of Patent: September 22, 2015Assignee: ASM America, Inc.Inventors: Chang-Gong Wang, Eric Shero
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Publication number: 20150240359Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.Type: ApplicationFiled: February 25, 2014Publication date: August 27, 2015Applicant: ASM IP Holding B.V.Inventors: Lucian C. Jdira, Herbert Terhorst, Michael Halpin, Carl White, Todd Robert Dunn, Eric Shero, Melvin Verbass, Christopher Wuester, Kyle Fondurulia
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Patent number: 9111749Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.Type: GrantFiled: June 10, 2014Date of Patent: August 18, 2015Assignee: ASM IP HOLDINGS B.V.Inventors: Eric Shero, Suvi Haukka
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Publication number: 20150187568Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.Type: ApplicationFiled: March 17, 2015Publication date: July 2, 2015Inventors: Fred Pettinger, Carl White, Dave Marquardt, Sokol Ibrani, Eric Shero, Todd Dunn, Kyle Fondurulia, Mike Halpin
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Publication number: 20150179440Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: ApplicationFiled: August 18, 2014Publication date: June 25, 2015Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Maes, Suvi Haukka, Eric Shero, Tom Blomberg, Dong Li
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Publication number: 20150167159Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: ApplicationFiled: February 27, 2015Publication date: June 18, 2015Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Patent number: 9017481Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.Type: GrantFiled: October 28, 2011Date of Patent: April 28, 2015Assignee: ASM America, Inc.Inventors: Fred Pettinger, Carl White, Dave Marquardt, Sokol Ibrani, Eric Shero, Todd Dunn, Kyle Fondurulia, Mike Halpin
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Patent number: 9005539Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: GrantFiled: November 14, 2012Date of Patent: April 14, 2015Assignee: ASM IP Holding B.V.Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Patent number: 8986456Abstract: A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.Type: GrantFiled: April 19, 2010Date of Patent: March 24, 2015Assignee: ASM America, Inc.Inventors: Kyle Fondurulia, Eric Shero, Mohith E. Verghese, Carl L. White
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Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
Patent number: 8883270Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.Type: GrantFiled: August 11, 2010Date of Patent: November 11, 2014Assignee: ASM America, Inc.Inventors: Eric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang -
Publication number: 20140295673Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.Type: ApplicationFiled: June 10, 2014Publication date: October 2, 2014Inventors: Eric Shero, Suvi Haukka
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Patent number: 8846550Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.Type: GrantFiled: March 14, 2013Date of Patent: September 30, 2014Assignee: ASM IP Holding B.V.Inventors: Eric Shero, Suvi Haukka
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Patent number: 8841182Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.Type: GrantFiled: March 14, 2013Date of Patent: September 23, 2014Assignee: ASM IP Holding B.V.Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E. Blomberg, Dong Li
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Publication number: 20140273510Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E. Blomberg, Dong Li
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Publication number: 20140273428Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: ASM IP HOLDING B.V.Inventors: Eric Shero, Suvi Haukka
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Publication number: 20140103145Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.Type: ApplicationFiled: October 12, 2012Publication date: April 17, 2014Applicant: ASM IP Holding B.V.Inventors: Carl White, Todd Dunn, Eric Shero, Kyle Fondurulia
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Patent number: 8563444Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.Type: GrantFiled: July 1, 2011Date of Patent: October 22, 2013Assignee: ASM America, Inc.Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
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Publication number: 20130230814Abstract: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.Type: ApplicationFiled: March 2, 2012Publication date: September 5, 2013Applicant: ASM IP HOLDING B.V.Inventors: Todd Dunn, Carl White, Michael Halpin, Eric Shero, Jerry Winkler
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Publication number: 20130203267Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: ApplicationFiled: February 6, 2012Publication date: August 8, 2013Applicant: ASM IP HOLDING B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang