Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Abstract: [PROBLEM] To provide a novel method for synthesising a polyphenol. [SOLUTION] A polyphenol production method including the reaction of catechin in the presence of a catalyst and an oxidising agent, said catalyst comprising a metal oxide and/or a composite that comprises: a substrate which has an inorganic material on the surface thereof; and metal nanoparticles of a particle diameter of 0.5-100 nm attached to the surface of the inorganic material.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first oxide; a first conductor, a second conductor, and a first insulator over the first oxide; and a third conductor over the first insulator. The first conductor includes a first crystal. The second conductor includes a crystal having the same crystal structure as the first crystal. The first crystal has (111) orientation with respect to a surface of the first oxide. The first oxide includes a second crystal. The second crystal has c-axis alignment with respect to a surface where the first oxide is formed. The lattice mismatch degree of the first crystal with respect to the second crystal is lower than or equal to 8 percent.

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor.

Abstract: A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. A first insulator, first and second oxide films, a first conductive film, a first insulating film, and a second conductive film are deposited and processed to form a first and second oxides, a first conductive layer, a first insulating layer, and a second conductive layer. In the process, a layer is formed to cover the first and second oxides, the first conductive layer, the first insulating layer, and the second conductive layer. The second conductive layer and the layer are removed. A second insulating layer in contact with side surfaces of the first and second oxides, the first conductive layer, and the first insulating layer is formed, and a second insulator is formed thereover. An opening reaching the second oxide is formed in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator.

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

Abstract: A semiconductor device with high reliability is provided. A first conductor and a second conductor are provided over and in contact with a first oxide. A first insulator is provided to cover the first oxide, a first conductor, and a second conductor. The first insulator includes an opening portion. The first oxide is exposed on a bottom surface of the opening portion. A side surface of the first conductor and a side surface of the second conductor are exposed on a side surface of the opening portion. A second oxide is provided in contact with the first oxide, the side surface of the first conductor, and the second conductor in the opening portion. A second insulator is provided in the opening portion with the second oxide therebetween. A third conductor is provided in the opening portion with the second insulator therebetween. Lower end portions of the side surface of the first conductor and the second conductor touch an ellipse or a circle with a center above the first oxide.

Abstract: A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator, forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator, cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator, and processing the opening to have a cylindrical shape or an inverted cone shape.

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor.

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Abstract: [PROBLEM] To provide a novel method for synthesising a polyphenol. [SOLUTION] A polyphenol production method including the reaction of catechin in the presence of a catalyst and an oxidising agent, said catalyst comprising a metal oxide and/or a composite that comprises: a substrate which has an inorganic material on the surface thereof; and metal nanoparticles of a particle diameter of 0.5-100 nm attached to the surface of the inorganic material.

Abstract: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.

Abstract: A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.

Abstract: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.