Abstract: An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

Abstract: A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.

Abstract: To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.

Abstract: To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

Abstract: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

Abstract: To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

Abstract: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

Abstract: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

Abstract: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: When a design diagram of the semiconductor device by a conventional CAD tool is used, a pattern which can be formed with the ink-jet apparatus is limited; therefore, there is a possibility that some circuits of the desired semiconductor device cannot be formed as they are designed. A plurality of basic patterns which can be obtained by discharging with the ink-jet apparatus are prepared, and layout of a desired integrated circuit is performed by combining the patterns. A light-exposure mask is formed based on the layout obtained. Light exposure is performed using the light-exposure mask. Then, development is performed, and the resist film remains in the light-exposed region of which width is narrower than the diameter of the droplet landed. Liquid repellent treatment is performed to an exposed portion on the surface, and then the material droplet is dropped over the resist film.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Abstract: To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

Abstract: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.