Abstract: An ion source. The ion source may include a plasma chamber to house a plasma, and an extraction assembly, disposed along a side of the plasma chamber, and comprising at least one extraction aperture. The ion source may further include an antenna assembly, extending through the plasma chamber, along a first axis. The antenna assembly may include a dielectric enclosure, a plurality of conductive antennae, extending along the first axis within the dielectric enclosure.

Abstract: Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

Abstract: Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

Abstract: An apparatus may include a platen to hold a substrate. A substrate plane structure may be disposed in front of the platen. The substrate plane structure has an opening therein. The apparatus may further include a removable structure disposed in the opening of the substrate plane structure. The removable structure may have an opening exposing a surface of the platen.

Abstract: A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Abstract: A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Abstract: A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Abstract: An apparatus for use within a process chamber is provided. The apparatus includes a liner adapted to cover the sidewalls of the process chamber, with apertures corresponding to various inlets and outlets in the process chamber. In addition, the liner has one or more apertures on its bottom surface, which allow particles to pass through the liner. The liner is designed to be shorter in height than the sidewalls of the process chamber. This allows the liner to be placed within the chamber such that its bottom surface is above the floor of the process chamber. This minimizes the possibility of particles that have fallen onto the process chamber floor becoming re-suspended at a later time. According to a second aspect of the disclosure, a bottom liner is provided. This liner can be used in conjunction with a conventional liner or in a process chamber without a liner.

Abstract: A method includes positioning at least one dual sided workpiece on an assembly in a process chamber to expose a first side of the at least one dual sided workpiece, treating the first side of the at least one dual sided workpiece, reorienting a portion of the assembly in the process chamber to expose a second side of the at least one dual sided workpiece, the second side opposing the first side, and treating the second side. A processing apparatus including a process chamber defining an enclosed volume and a dual sided workpiece assembly disposed in the enclosed volume is also provided.

Abstract: An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly.

Abstract: An optional insertable feature to the trim or modulating member for ball-type valves limits the magnitude of fluid flow turbulence within the flow stream of the valve. This attenuates noise and cavitation caused by flow through the valve. The insert mounts into the interior of the trim member and presents two intersecting apertured surfaces. The apertures or holes are specially shaped, sized, and spaced to maximize flow efficiency and minimize fluid turbulence as a result of flow through ball-like valves. The size and orientation of the surfaces are such that they restrict and partition fluid flow through the valve to varying degrees at varying valve openings. Virtually all fluid is partitioned by being directed through the apertured plates during approximately the first 50 percent opening of the valve to minimize noise and cavitation, while insuring that the flow characteristic is a monotonic function between valve capacity and valve opening.