Patents by Inventor Ernst Hendrik August Granneman
Ernst Hendrik August Granneman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11339474Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: GrantFiled: March 30, 2020Date of Patent: May 24, 2022Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Leilei Hu
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Patent number: 10837107Abstract: A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.Type: GrantFiled: July 6, 2011Date of Patent: November 17, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Kuznetsov
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Publication number: 20200263300Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: ApplicationFiled: March 30, 2020Publication date: August 20, 2020Inventors: Ernst Hendrik August GRANNEMAN, Leilei HU
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Patent number: 10738382Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 142) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.Type: GrantFiled: March 18, 2014Date of Patent: August 11, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Pieter Tak
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Patent number: 10648078Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: GrantFiled: November 3, 2015Date of Patent: May 12, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Leilei Hu
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Publication number: 20170167020Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: ApplicationFiled: November 3, 2015Publication date: June 15, 2017Inventors: Ernst Hendrik August Granneman, Leilei HU
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Publication number: 20170076935Abstract: An apparatus (100) comprising:—a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T);—a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; and—a plurality of gas exhaust channels (110), provided in both said intend tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.Type: ApplicationFiled: November 29, 2016Publication date: March 16, 2017Inventor: Ernst Hendrik August Granneman
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Patent number: 9478449Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.Type: GrantFiled: July 13, 2012Date of Patent: October 25, 2016Assignee: ASM INTERNATIONAL N.V.Inventors: Pascal Gustaaf Vermont, Wilhelmus Gerardus Van Velzen, Vladimir Ivanovich Kuznetsov, Ernst Hendrik August Granneman, Gonzalo Felipe Ramirez Troxler
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Publication number: 20160281233Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 42) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.Type: ApplicationFiled: March 18, 2014Publication date: September 29, 2016Inventors: Ernst Hendrik August Granneman, Pieter Tak
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Publication number: 20140199788Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.Type: ApplicationFiled: July 13, 2012Publication date: July 17, 2014Applicant: Levitech B.V.Inventors: Pascal Gustaaf Vermont, Wilhelmus Gerardus Van Velzen, Vladimir Ivanovich Kuznetsov, Ernst Hendrik August Granneman, Gonzalo Felipe Ramirez Troxler
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Publication number: 20130199448Abstract: A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.Type: ApplicationFiled: July 6, 2011Publication date: August 8, 2013Inventors: Ernst Hendrik August Granneman, Vladimir Kuznetsov
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Publication number: 20120291707Abstract: An apparatus (100) comprising:—a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T);—a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; and—a plurality of gas exhaust channels (110), provided in both said lateral tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.Type: ApplicationFiled: November 19, 2010Publication date: November 22, 2012Applicant: Levitech B.V.Inventor: Ernst Hendrik August Granneman
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Patent number: 7312156Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.Type: GrantFiled: September 1, 2004Date of Patent: December 25, 2007Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Frank Huussen
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Patent number: 7048488Abstract: For wafer processing, wafers are transferred between a thermal treatment chamber and a thermal treatment installation. The treatment chamber has a top section and a bottom section between which the wafer is accommodated during treatment. The thermal treatment installation has a loading chamber having loading means and transport means. The wafer is place on a wafer support while in the loading chamber, wherein the wafer support is configured as a ring having support elements to support the wafer. The wafer support loaded with the wafer is inserted into the thermal treatment chamber so that the wafer and the wafer support are positioned between the top section and the bottom section. The wafer is individually processed in the thermal treatment chamber. After processing the wafer, the wafer support is removed from the thermal treatment chamber.Type: GrantFiled: May 8, 2000Date of Patent: May 23, 2006Assignee: ASM International N.V.Inventors: Vladimir Ivanovich Kuznetsov, Theodorus Gerardus Maria Oosterlaken, Christianus Gerardus Maria Ridder, Ernst Hendrik August Granneman
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Patent number: 6877250Abstract: In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.Type: GrantFiled: December 10, 2002Date of Patent: April 12, 2005Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Gert Jan Snijders
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Patent number: 6805749Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.Type: GrantFiled: June 24, 2003Date of Patent: October 19, 2004Assignee: ASM International, N.V.Inventors: Ernst Hendrik August Granneman, Frank Hunssen
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Patent number: 6770851Abstract: In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.Type: GrantFiled: June 27, 2002Date of Patent: August 3, 2004Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Arjen Benjamin Storm, Herbert Terhorst
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Publication number: 20040087168Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.Type: ApplicationFiled: June 24, 2003Publication date: May 6, 2004Inventors: Ernst Hendrik August Granneman, Frank Hunssen
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Patent number: 6613685Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.Type: GrantFiled: November 20, 2000Date of Patent: September 2, 2003Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Frank Huussen
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Patent number: 6607602Abstract: Device for processing semiconductor wafers, comprising at least one processing chamber which is completely closed with the exception of a connection to a distribution. System. In said at least one processing chamber there are situated preferably two reactors and a common feed/removal system in order to be able to subject wafers, which may optionally be arranged in boats, to an identical processing operation.Type: GrantFiled: October 12, 1999Date of Patent: August 19, 2003Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Albert Hasper, Jan Zinger