Abstract: In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

Abstract: In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

Abstract: Apparatus, method and system for the treatment of a wafer. After a treatment at elevated temperature, a wafer is taken out of the reactor in question with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side and consists of a wafer surrounding ring. The wafer is then placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Abstract: Floating wafer provided with heating elements which, by means of a controller, keep the walls of the floating wafer reactor at the desired temperature. By means of the sensors arranged in the walls, this temperate is kept substantially constant. To compensate for the temperature drop occurring during the entering of a wafer, which is caused by the absorption of warmth by the comparatively cold wafer, and to limit temperature variation in the processing area as much as possible, it is proposed to immediately supply an amount of energy to the heating elements, independently of the reaction of the sensors, during entering of the wafer.

Abstract: Method for the treatment of semiconductor substrates as well as an oven-boat system for this purpose. The oven is embodied as a vertical oven and it is aimed to simultaneously treat a number of substrates arranged one above the other in a boat. To carry out the deposition and such processes at raised temperatures as uniformly as possible, that is, so that each semiconductor substrate substantially undergoes the same treatment, it is proposed on the one hand to vary the ratio of the volume limited by two consecutive armrests and on the other hand the volume limited by screening off the process area and the edge of the substrates from the insertion end of the gas to the discharge end of the gas that flows through the oven.

Abstract: Apparatus, method and system for the treatment of a wafer. After a treatment at elevated temperature, a wafer is taken out of the reactor in question with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side and consists of a wafer surrounding ring. The wafer is then placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

Abstract: Method for the treatment of semiconductor substrates as well as an oven-boat system for this purpose. The oven is embodied as a vertical oven and it is aimed to simultaneously treat a number of substrates arranged one above the other in a boat. To carry out the deposition and such processes at raised temperatures an uniformly as possible, that is, so that each semiconductor substrate substantially undergoes the same treatment, it is proposed on the one hand to vary the ratio of the volume limited by two consecutive armrests and on the other hand the volume limited by screening off the process area and the edge of the substrates from the insertion end of the gas to the discharge end of the gas that flows through the oven.

Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.