Abstract: A semiconductor device is disclosed. One embodiment provides a module including a first carrier having a first mounting surface and a second mounting surface, a first semiconductor chip mounted onto the first mounting surface of the first carrier and having a first surface facing away from the first carrier, a first connection element connected to the first surface of the first semiconductor chip, a second semiconductor chip having a first surface facing away from the first carrier, a second connection element connected to the first surface of the second semiconductor chip, and a mold material covering the first connection element and the second connection element only partially.

Abstract: A power semiconductor device has a semiconductor chip stack and lines within a housing. The lines electrically connect large-area contact regions of power semiconductor device components within the housing to one another. In this case, at least one of the lines has a large-area planar conductive layer. This planar conductive area electrically connects the large-area contact regions to one another.

Abstract: The invention involves a programmable power supply device with configurable restrictions to the programmability of the power supply device, wherein the programmable power supply device comprises a number of freeze/programmability levels, each freeze/programmability defining a dedicated access restriction to the programmability of the power supply device.

Abstract: The invention relates to a triple prism which reflects light, a reflector and to a method for recognizing an object. A reflective photoelectric barrier sends light to a reflector. The reflector does not answer with the form of the obtained light signal, but with a double signal which projects two light centers. The reflector can also be embodied such that it answers with a different geometric figure than the light projection. The reflector with a modified signal enables a sensor system to be produced and which can verify, by evaluating the light signal captured by the reflector, whether the captured signal of the reflector or another reflection.

Abstract: The invention involves a programmable power supply device with configurable restrictions to the programmability of the power supply device, wherein the programmable power supply device comprises a number of freeze/programmability levels, each freeze/programmability defining a dedicated access restriction to the programmability of the power supply device.

Abstract: A method for exchanging information between a first device and a second device connected via a communication link, the communication link supporting a query command and at least a further command, where each command includes a specific command code is described. The method comprises transmitting a query command code and data from the first device via the communication link, the data identifying a specific command, receiving the query command code and the data at the second device, transmitting reply data from the second device via the communication link, the reply data including at least a first segment and a second segment, and receiving the reply data at the first device, wherein the first segment includes information whether the specific command is supported, wherein, if the specific command is not supported, the second segment includes information identifying an alternative command to the specific command.

Abstract: The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.

Abstract: An electronic module. One embodiment includes a carrier. A first transistor is attached to the carrier. A second transistor is attached to the carrier. A first connection element includes a first planar region. The first connection element electrically connects the first transistor to the carrier. A second connection element includes a second planar region. The second connection element electrically connects the second transistor to the carrier. In one embodiment, a distance between the first planar region and the second planar region is smaller than 100 ?m.

Abstract: A system and method for statistics recording of power devices is disclosed. A power circuit includes a power device to provide a specified electrical power to a load and a host controller coupled to the power device. The host controller is configured to provide issue instructions to and retrieve status information from the power device. A communications and control interface (CCI) is coupled between the power device and the host controller. The CCI is configured to operate as a communications interface between the power device and the host controller and to retrieve and store status information from the power device. The CCI may be capable of performing statistical analysis on the status information to help reduce the amount of information exchanged between the host controller and the power device, thereby reducing bandwidth requirements.

Abstract: The invention relates to a triple prism which reflects light, a reflector and to a method for recognizing an object. A reflective photoelectric barrier sends light to a reflector. The reflector does not answer with the form of the obtained light signal, but with a double signal which projects two light centers. The reflector can also be embodied such that it answers with a different geometric figure than the light projection. The reflector with a modified signal enables a sensor system to be produced and which can verify, by evaluating the light signal captured by the reflector, whether the captured signal of the reflector or another reflection.

Abstract: A method for exchanging information between a first device and a second device connected via a communication link, the communication link supporting a query command and at least a further command, where each command includes a specific command code is described. The method comprises transmitting a query command code and data from the first device via the communication link, the data identifying a specific command, receiving the query command code and the data at the second device, transmitting reply data from the second device via the communication link, the reply data including at least a first segment and a second segment, and receiving the reply data at the first device, wherein the first segment includes information whether the specific command is supported, wherein, if the specific command is not supported, the second segment includes information identifying an alternative command to the specific command.

Abstract: A semiconductor device is disclosed. One embodiment provides a module including a first carrier having a first mounting surface and a second mounting surface, a first semiconductor chip mounted onto the first mounting surface of the first carrier and having a first surface facing away from the first carrier, a first connection element connected to the first surface of the first semiconductor chip, a second semiconductor chip having a first surface facing away from the first carrier, a second connection element connected to the first surface of the second semiconductor chip, and a mold material covering the first connection element and the second connection element only partially.

Abstract: A component includes a first semiconductor chip attached to a first carrier and second semiconductor chip attached to a second carrier. The first carrier has a first extension, which forms a first external contact element. The second carrier has a second extension, which forms a second external contact element. The first and the second carriers are arranged in such a way that the first and the second extension point in different directions.

Abstract: A multi-chip module includes at least one integrated circuit chip that is electrically connected to first external terminals of the multi-chip module and at least one power semiconductor chip that is electrically connected to second external terminals of the multi-chip module. All first external terminals of the multi-chip module are arranged in a contiguous region of an terminal area of the multi-chip module.

Abstract: An electronic device and production method is disclosed. One embodiment provides an integrated component, a housing body, and an electrically conductive first layer region arranged outside the housing body.

Abstract: The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.

Abstract: A power semiconductor device (1) has a semiconductor chip stack (4) and lines (5) within a housing (6). The lines electrically connect large-area contact regions (7) of power semiconductor device components (8) within the housing (6) to one another. In this case, at least one of the lines (5) has a large-area planar conductive layer (9). This planar conductive area (9) electrically connects the large-area contact regions (7) to one another.

Abstract: Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.