Abstract: The present invention relates to a process for preparing aqueous colloidal silica sols of high purity from silicate solutions, to aqueous colloidal silica sols with a specific profile of impurities, and to the use thereof. The invention further encompasses high-purity aqueous silica obtained as an intermediate in the course of the purification process, high-purity silicon dioxide obtainable by dewatering, and the use thereof.

Abstract: An organic light-emitting component has an active layer for emitting electromagnetic radiation. It also has an anode and an organic charge transport layer, arranged between the active layer and the anode, for transporting charge carriers from the anode to the active layer. The anode can be used to decouple electromagnetic radiation emitted by the active layer from the organic light-emitting component. The organic charge transport layer comprises a copper complex which has at least one ligand with the chemical structure as per a formula I.

Abstract: The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.

Abstract: A method for producing an electronic component may include: applying an electrode growth layer on or above a layer structure by means of an atomic layer deposition method; and applying an electrode on the electrode growth layer, wherein the electrode growth layer is applied with a layer thickness in a range of approximately 1.5 nm to approximately 28 nm.

Abstract: A reactor and a plant containing the reactor for conducting a continuous, industrial process for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride is provided. The plant contains a plasma reactor having a dielectric, a high voltage electrode and an earthed, metallic heat exchanger, in which the longitudinal axes of the dielectric, of the high-voltage electrode and of the earthed, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Abstract: The present invention relates to an improved process for producing silicon, preferably solar silicon, using novel high-purity graphite mouldings, especially graphite electrodes, and to an industrial process for production of the novel graphite mouldings.

Abstract: An organic light-emitting device comprising an active layer for producing radiation having a first side surface and a second side surface adjoining a corner edge. A first contact strip extends along the first side surface for injecting charge carriers of a first type into the active layer. A second contact strip extends along the second side surface for injecting charge carriers of a second type into the active layer. The first side surface has a recessed region adjoining the corner edge, and the injection of charge carriers from the first contact strip is suppressed in the recessed region.

Abstract: A method for modification of a methane-containing gas stream, comprising the steps of: i) withdrawal of at least one substream from a methane-containing gas stream; ii) treatment of the substream with an electrically generated plasma, generating a modified gas composition which comprises a lower fraction of methane than the methane-containing gas stream used and iii) return of modified gas composition into the methane-containing gas stream. This method makes possible the storage of excess power in a natural gas line grid.

Abstract: A radiation-emitting arrangement comprises, in particular, a carrier element (1) having an at least partly non-transparent main surface (10) and arranged on the carrier element (1), an organic radiation-emitting component (2) having an organic layer sequence (23) with an active region between an at least partly transparent first electrode (21) and an at least partly transparent second electrode (22). The active region (29) is suitable for generating electromagnetic radiation (91, 93) in a switched-on operating state. The radiation-emitting arrangement has a radiation exit area (3) for emitting the electromagnetic radiation (92, 93) on that side of the organic radiation-emitting component (2) which faces away from the carrier element. (1) The at least partly non-transparent main surface (10) of the carrier element (1) is perceptible by an external observer through the radiation exit area (3) in a switched-off operating state of the organic radiation-emitting component (2).

Abstract: The present invention relates to processes for industrial pyrolysis of a carbohydrate or carbohydrate mixture with addition of amorphous carbon, to a pyrolysis product thus obtainable and to the use thereof, especially as a reducing agent in the production of silicon from silica and carbon at high temperature.

Abstract: A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Abstract: An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.

Abstract: The present invention relates to a process for producing surface-modified water-absorbing polymer structures, comprising the process steps of providing a multitude of water-absorbing polymer structures and treating the surface of the water-absorbing polymer structures with a plasma and mixing a filler with the water-absorbing polymer structures. The invention also relates to an apparatus for this process, to the surface-modified water-absorbing polymer structures obtainable by this process, to a composite comprising these surface-modified water-absorbing polymer structures and a substrate, to a process for producing a composite, to a composite obtainable by this process, to chemical products comprising these surface-modified water-absorbing polymer structures or the composite, and to the use of the surface-modified water-absorbing polymer structures or of the composite in chemical products.

Abstract: A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a silicon oxide, purified by acidic precipitation from an aqueous solution of a silicon oxide dissolved in an aqueous phase, using one or more pure carbon sources, the purified silicon oxide being obtained, in particular, by the precipitation of a silicon oxide dissolved in an aqueous phase in an acidifier. The invention also relates to a formulation containing an activator and to a device for producing silicon, a reactor and electrodes.

Abstract: The present invention relates to a system for producing silicon, preferably high-purity silicon, particularly solar silicon, and to a method for producing silicon, preferably high-purity silicon, in particular solar silicon, in each case with particularly effective resource utilization and reduced emission of pollutants.

Abstract: The object of the invention is a more energy-efficient system for utilizing waste heat and residual gases from the engineered generation of carbon compounds, such as carbon black, graphite or from sugar pyrolysis, using a coupling of energy-heat or a thermal heat-generating plant for generating electrical energy, in particular for operating melt furnaces, and/or for utilizing the waste heat in endothermal processes. The invention also relates to the use of waste heat.

Abstract: An organic light-emitting diode (1), comprising a layer stack (2) for emitting electromagnetic radiation (6). An electrically conductive first connection layer (4) is arranged on a first surface of the layer stack (2) and an electrically conductive second connection layer (5) at least predominantly transparent to a characteristic wavelength of the emittable electromagnetic radiation (6) is arranged on a second surface of the layer stack (2). The organic light-emitting diode is characterised by a conductive contact structure (7) arranged on the opposite side of the first connection layer (4) from the layer stack, which contact structure is connected electrically to the second connection layer (5) in the region of a plurality of openings (12) in the first connection layer (4). Also disclosed is a contact arrangement (15) for a two-dimensional, optically active element and to a method of producing organic light-emitting diodes (1).

Abstract: The present invention relates to methods for the technical pyrolysis of a carbohydrate or carbohydrate mixture at an elevated temperature while adding silicon oxide, to a pyrolysis product obtainable in this way, and to the use thereof as a reducing agent for the production of solar silicon from silicic acid and carbon at a high temperature.