Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.

Abstract: A charge pump and method converts an input voltage to a boosted voltage having a magnitude or polarity that is different from that of the input voltage. The input voltage is adjusted so that it has a relatively large magnitude until the boosted voltage approaches a target voltage. Therefore, the charge pump and method can more quickly charge a capacitive load. The magnitude of the input voltage may be proportional to the difference between the magnitude of a reference voltage and the magnitude of the boosted voltage. The magnitude of the input voltage may alternatively be substantially equal to the magnitude of a supply voltage until the magnitude of the boosted voltage is within a predetermined range of the target voltage, at which point it may be proportional to the difference between the magnitude of a reference voltage and the magnitude of the boosted voltage.

Abstract: The apparatus and method provide a readout technique and circuit for increasing or maintaining dynamic range of an image sensor. The readout technique and circuit process each pixel individually based on the magnitude of the readout signal. The circuit includes a gain amplifier amplifying the readout analog signal, a level detection circuit for determining the signal's magnitude, a second gain amplifier applying a gain based on the signal magnitude and an analog-to-digital converter digitizing the signal and a circuit for multiplying or dividing the signal. The method and circuit allow for a lower signal-to-noise ratio while increasing the dynamic range of the imager.

Abstract: The apparatus and method provide a readout technique and circuit for increasing or maintaining dynamic range of an image sensor. The readout technique and circuit process each pixel individually based on the magnitude of the readout signal. The circuit includes a gain amplifier amplifying the readout analog signal, a level detection circuit for determining the signal's magnitude, a second gain amplifier applying a gain based on the signal magnitude and an analog-to-digital converter digitizing the signal and a circuit for multiplying or dividing the signal. The method and circuit allow for a lower signal-to-noise ratio while increasing the dynamic range of the imager.

Abstract: An anti-eclipse circuit for an imager is formed from pixel circuitry over the same semiconductor substrate as the imaging pixels. More specifically, two adjacent pixel circuits are modified to form an amplifier. One input of the amplifier is adapted to receive a reset signal from one of the pixel circuits while another input is adapted to be set at a predetermined offset voltage from the output of the amplifier. The amplifier is preferably a unity gain amplifier, so that the output of the amplifier set to a voltage level equal to the predetermined offset from the voltage level of the reset signal. Accordingly, the anti-eclipse circuit outputs a reference voltage at predetermined level from the reset voltage of a pixel and does not need to be calibrated for fabrication related variances in reset voltages.

Abstract: The apparatus and method provide a readout technique and circuit for increasing or maintaining dynamic range of an image sensor. The readout technique and circuit process each pixel individually based on the magnitude of the readout signal. The circuit includes a gain amplifier amplifying the readout analog signal, a level detection circuit for determining the signal's magnitude, a second gain amplifier applying a gain based on the signal magnitude and an analog-to-digital converter digitizing the signal and a circuit for multiplying or dividing the signal. The method and circuit allow for a lower signal-to-noise ratio while increasing the dynamic range of the imager.

Abstract: An imager and a method for real-time, non-destructive monitoring of light incident on imager pixels during their exposure to light. Real-time or present pixel signals, which are indicative of present illumination on the pixels, are compared to a reference signal during the exposure. Adjustments, if necessary, are made to programmable parameters such as gain and/or exposure time to automatically control the imager's exposure to the light. In a preferred exemplary embodiment, only a selected number of pixels are monitored for exposure control as opposed to monitoring the entire pixel array.

Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.

Abstract: Electrolyte for the manufacture or refining of silicon at high temperatures, particularly suited for the manufacture of high grade silicon. The electrolyte is mainly formed from a salt melt of CaCl2 and CaO. The invention further concerns a method for the manufacture of silicon in a salt melt at a high temperature, in which quartz with a low content of phosphorus and boron is subjected to electrolysis in such a melt, and a method for the refining of silicon where the silicon to be refined is used as an alloy element for the anode used in an electrolytic cell including the melt defined above.