Patents by Inventor Etienne Robilliart

Etienne Robilliart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIM transistor
    Patent number: 8354725
    Abstract: The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: January 15, 2013
    Assignee: STMicroelectronics Crolles 2 SAS
    Inventors: Benoit Froment, Etienne Robilliart
  • MIM TRANSISTOR
    Publication number: 20110095375
    Abstract: The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.
    Type: Application
    Filed: January 4, 2011
    Publication date: April 28, 2011
    Applicant: STMicroelectronics Crolles 2 SAS
    Inventors: Benoit Froment, Etienne Robilliart
  • MIM transistor
    Publication number: 20080135827
    Abstract: The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.
    Type: Application
    Filed: September 25, 2007
    Publication date: June 12, 2008
    Applicant: STMicroelectronics Crolles 2 SAS
    Inventors: Benoit Froment, Etienne Robilliart
  • Integrated capacitor with high voltage linearity and low series resistance
    Patent number: 6218723
    Abstract: A capacitor integrated on a silicon substrate includes a first electrode made of highly doped polysilicon, a thin silicon oxide layer, a second electrode made of polysilicon and a silicide layer covering the second electrode. The second electrode has a high dopant concentration at its interface with the silicon oxide layer and a low or medium dopant concentration at its interface with the silicide layer.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: April 17, 2001
    Assignee: STMicroelectronics S.A.
    Inventors: Philippe Delpech, Etienne Robilliart, Didier Dutartre