Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: A long-life battery whose properties do not deteriorate after charge-discharges cycles is provided. A non-aqueous electrolyte secondary battery includes a cathode, an anode, and a non-aqueous electrolytic solution containing an electrolyte. At least one of the cathode and the anode includes a binder. The binder includes a layer having electron conductivity on a surface thereof. The binder improves the contact property between particles of the active materials of the battery and the conductivity in the electrode without impairing the binding property of the binder. Preferably, the binder includes a metal on the surface thereof and the metal does not form an alloy with lithium to further improve the lifetime of the battery.

Abstract: A light-emitting device includes a substrate and a light-emitting element formed on the substrate. The light-emitting element includes a stacked layer structure portion including a reflective electrode, a light-emitting layer on the reflective electrode and a transparent electrode on the light-emitting layer which are stacked over the substrate with the reflective electrode as a bottom layer, the light-emitting layer having a flat surface provided at least on a portion of the light-emitting layer. A bank is disposed in a peripheral area surrounding the flat surface or on a peripheral portion of the flat surface and has a tilt surface tilted with respect to the flat surface. A conductive film is at least provided on the tilt surface and is electrically connected with the transparent electrode, and forms a reflective surface on the tilt surface, and an optical waveguide layer is provided in an area surrounded by the tilt surface.

Abstract: A zinc oxide thin film having desired crystallinity is fabricated. The present invention provides a zinc oxide thin film which laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The c-axis of the crystalline thin film is oriented in a direction substantially perpendicular to the substrate. A zinc surface of being one polar surface of the crystalline thin film in the c-axis direction is formed in the uppermost layer. In addition, the invention also provides a zinc oxide thin film which is laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The zinc oxide thin film is formed on a metal thin film layer by a thin film fabricating technique.

Abstract: Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

Abstract: A light-emitting device includes a substrate and a light-emitting element formed on the substrate. The light-emitting element includes a stacked layer structure portion including a reflective electrode, a light-emitting layer on the reflective electrode and a transparent electrode on the light-emitting layer which are stacked over the substrate with the reflective electrode as a bottom layer, the light-emitting layer having a flat surface provided at least on a portion of the light-emitting layer. A bank is disposed in a peripheral area surrounding the flat surface or on a peripheral portion of the flat surface and has a tilt surface tilted with respect to the flat surface. A conductive film is at least provided on the tilt surface and is electrically connected with the transparent electrode, and forms a reflective surface on the tilt surface, and an optical waveguide layer is provided in an area surrounded by the tilt surface.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: An object of the present invention is to provide a lithium ion battery which is excellent in properties at large current and can be applied to applications requiring high output power even when the mixture layers are made thick. The present invention provides a lithium ion battery including a positive electrode including a positive electrode mixture layer formed on a current collector, a negative electrode including a negative electrode mixture layer formed on a current collector and an electrolyte, the positive electrode and the negative electrode being disposed through the intermediary of a separator, wherein the positive electrode includes as a positive electrode active material a lithium composite oxide represented by LiNiaMnbCOcMdO2 (in the formula, M is at least one selected from the group consisting of Fe, V, Ti, Cu, Al, Sn, Zn, Mg, B and W, a+b+c+d=1, 0.2?a?0.8, 0.1?b?0.4, 0?c?0.4 and 0?d?0.

Abstract: A lithium-ion secondary battery system is provided which can improve the cycle life and the storage property of a lithium-ion secondary battery and can decrease a discharge capacity which cannot be recharged. The lithium-ion secondary battery system includes a lithium-ion secondary battery having a cathode, an anode including carbon, and a non-aqueous electrolyte; a charge/discharge circuit for putting the lithium-ion secondary battery on charge according to a charge control parameter; and an arithmetic processing section for controlling the charge/discharge circuit.

Abstract: The present invention provides a top emission type organic light-emitting display device in a production of which it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light-emitting display device contains an organic light-emitting layer and an upper electrode and a lower electrode sandwiching the organic light-emitting layer, and is of a structure in which the emitted light is taken out from the upper electrode side, and a buffer layer mainly made of an oxide producing less oxygen by decomposition in the film-forming process than the upper electrode material is provided between the organic light-emitting layer and the upper electrode.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: A substrate with plane patterns formed in a liquid process wherein the plane patterns are formed based on a combination of plane shapes by which a difference in internal pressure of a solution between any two points of the solution is small, the solution being ejected onto the substrate so as to form the plane patterns by the liquid process.

Abstract: A lithium ion secondary battery includes: a cathode that stores/releases lithium ion at a potential not lower than an oxidation-reduction equilibrium potential between halogen ion and halogen; an anode that stores/releases lithium ion, preferably containing carbon; and a non-aqueous electrolytic solution composed of a non-aqueous solvent having dissolved therein an electrolyte. The non-aqueous electrolytic solution contains lithium halide or a halogen molecule. Instead of the non-aqueous electrolytic solution, a polymer solid electrolyte containing lithium halide or halogen molecule may be used.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

Abstract: A zinc oxide thin film having desired crystallinity is fabricated. The present invention provides a zinc oxide thin film which laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The c-axis of the crystalline thin film is oriented in a direction substantially perpendicular to the substrate. A zinc surface of being one polar surface of the crystalline thin film in the c-axis direction is formed in the uppermost layer. In addition, the invention also provides a zinc oxide thin film which is laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The zinc oxide thin film is formed on a metal thin film layer by a thin film fabricating technique.

Abstract: An MIM electron source is comprised of a lower electrode, an insulation film and an upper electrode. By depositing a coat film on the upper electrode through a sputter process using a sputter target of alkaline glass having a modifier component of an alkaline metal oxide or alkaline earth metal oxide, the work function of the upper electrode can be lowered. As a result, the electron emission efficiency can be increased stably.

Abstract: An image display device comprising a back-surface substrate (1) having a plurality of first electrodes (8), an insulating film (14), a plurality of second electrodes (9), and an electron source (10); a front-surface substrate (2) having a fluorescent layer (15), and further having an anode for the application of an acceleration voltage; a frame (3) disposed between the front-surface substrate (2) and the back-surface substrate (1); and a sealing member (5) for sealing the frame (3) and the two substrates in an airtight manner in a sealed area (52). The second electrodes (9) cover the insulating film (14) disposed beneath these second electrodes (9) in at least the sealed area (52), and place the sealing member (5) and the insulating film (14) in a non-contact state.