Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: A liquid crystal display apparatus which has a large pixel aperture ratio, a high luminance and good yield without causing any signal delay on wiring or increasing any driving voltage. In a structure in which a capacity is formed on a superimposed part of a common signal electrode CE and at least one of a data signal wiring DL and a scanning signal wiring GL via an interlayer insulating film PAS, of insulating films included in the interlayer insulating film PAS, at least a layer OIL1 is selectively formed at least on a part of a region on a pixel electrode PX.

Abstract: When reflection type liquid crystal display devices of different specifications of which pixel pitches or the like are different are produced, commonality of photo masks for at least one photo mask is provided to reduce production costs for producing reflection type liquid crystal display devices having different pixel pitches. In the reflection type liquid crystal display device, an island pattern is formed in matrix form in the same layer as a semiconductor layer of a thin film transistor. A specific regularity is provided in which a pitch of the island pattern in an extending direction of an image signal line is different from a pitch of pixel electrodes neighboring in the extending direction of the image signal line, and the pitch of the island pattern in the extending direction of a scan signal line is different from the pitch neighboring in the extending direction of the scan signal line.

Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,

Abstract: When reflection type liquid crystal display devices of different specifications of which pixel pitches or the like are different are produced, commonality of photo masks for at least one photo mask is provided to reduce production costs for producing reflection type liquid crystal display devices having different pixel pitches. In the reflection type liquid crystal display device, an island pattern is formed in matrix form in the same layer as a semiconductor layer of a thin film transistor. A specific regularity is provided in which a pitch of the island pattern in an extending direction of an image signal line is different from a pitch of pixel electrodes neighboring in the extending direction of the image signal line, and the pitch of the island pattern in the extending direction of a scan signal line is different from the pitch neighboring in the extending direction of the scan signal line.

Abstract: A liquid crystal display apparatus including: a first substrate; a second substrate arrange opposite the first substrate; a liquid crystal layer held between the first substrate and the second substrate; a plurality of scanning lines arranged over the first substrate; a plurality of zigzag-shaped signal lines having bent portions, arranged crossing the scanning lines over the substrate; insulating films arranged over at least part of the signal lines; pixel electrodes matching the signal lines; and common electrodes matching the pixel electrodes and superposed over at least part of the signal lines via the insulating films, in which the bent portions of the zigzag-shaped signal lines are curved.

Abstract: A liquid crystal display unit in which a voltage is applied to a pixel electrode and a common signal electrode constituted by two upper and lower transparent conductive layers having insulation layers disposed therebetween so that a liquid crystal is driven to control display can improve any one or both of reduction of a writing time of the liquid crystal (reduction of a capacitance between the pixel electrode and the common signal electrode) and reduction of a driving voltage of the liquid crystal. An inter-layer insulation layer between the transparent electrodes formed of different layers is constituted by at least one or a laminated structure of a part of a gate insulation layer, a part of a surface protection layer of a thin film transistor and an applied-type insulation layer and insulation layers in an area which is positioned above the lower transparent electrode.

Abstract: A liquid crystal display apparatus which has a large pixel aperture ratio, a high luminance and good yield without causing any signal delay on wiring or increasing any driving voltage. In a structure in which a capacity is formed on a superimposed part of a common signal electrode CE and at least one of a data signal wiring DL and a scanning signal wiring GL via an interlayer insulating film PAS, of insulating films included in the interlayer insulating film PAS, at least a layer OIL1 is selectively formed at least on a part of a region on a pixel electrode PX.

Abstract: A wiring of a liquid crystal display device is made of a lamination film including a first layer of Nb or alloy containing Nb as its main component and a second layer of nitride of Nb or alloy containing Nb as its main component. A liquid crystal display device having such a wiring provides a wiring structure excellent in resistance to thermal oxidation.

Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,

Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,