Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. The main surface includes at least one incidence area for electromagnetic radiation. A plurality of doped wells of a second type of electric conductivity are arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The doped wells and the substrate are electrically contactable. The doped wells are arranged along a perimeter of the at least one incidence area, such that a center region of the incidence area is free from the doped wells.

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.

Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e?, h+ generated by radiation that is incident from a rear side opposite the photodetectors.

Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval.

Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e?, h+ generated by radiation that is incident from a rear side opposite the photodetectors.

Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter.

Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval.

Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.

Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter.

Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.

Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.

Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.

Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: A thin film structure for an optical sensor to achieve a wavelength window with nearly ripple free reflection and transmission has different areas of thin film with two or more different thicknesses.

Abstract: Defective pixels in a CMOS array give rise to spot noise that diminishes the integrity of the resulting image. Because CMOS arrays and digital logic can be fabricated on the same integrated circuit using the same processing technology and relatively inexpensive and fast circuit can be employed to digitally filter the pixel data stream and to identify pixels having values that do not fall in the range defined by the immediately neighboring pixels and the deviate from the neighboring pixels by more than a threshold amount. Such conditions would indicate that the deviation is caused by a defective pixel rather than by desired image data. The threshold amount can be preprogrammed or can be provided by a user or can be dynamically set using feedback indicating image quality. The filter would also provide a solution for other sensors such as CCD, although a single chip solution would likely not be possible.

Abstract: An linear optical sensor charged-coupled topology using single-stage inverting charge-coupled amplifier driving an analog-to-digital converter which uses the converter full-scale reference as a precharge level. Since an offset in the range of 100–200 mV is introduced in the charge amplifier, a corresponding offset is also introduced into the ADC to allow the amplifier to more quickly drive the amplifier output to a low level. The converter offset is proportional to the converter reference to ensure that it is controlled and tracks the reference.

Abstract: Image enhancement is automatically achieved by calibrating the reference voltage and gain of a differential amplifier and the integration interval so as to provide an input to a differential analog to digital converter (ADC) that utilizes the full dynamic range of the ADC. When used with a CMOS array, the imaging logic can be fabricated on a single chip with the array using combinational logic for fast, inexpensive calibration. Another advantageous feature is the ability to expand a desired portion of the luminance spectrum of the image in order to increase the digital resolution of the resulting image for that portion of the spectrum of interest.

Abstract: Defective pixels in a CMOS array give rise to spot noise that diminishes the integrity of the resulting image. Because CMOS arrays and digital logic can be fabricated on the same integrated circuit using the same processing technology and relatively inexpensive and fast circuit can be employed to digitally filter the pixel data stream and to identify pixels having values that do not fall in the range defined by the immediately neighboring pixels and the deviate from the neighboring pixels by more than a threshold amount. Such conditions would indicate that the deviation is caused by a defective pixel rather than by desired image data. The threshold amount can be preprogrammed or can be provided by a user or can be dynamically set using feedback indicating image quality. The filter would also provide a solution for other sensors such as CCD, although a single chip solution would likely not be possible.