Abstract: The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks.

Abstract: A multi-layered reflective mirror formed of spaced-apart plate-shaped empty space patterns formed within a substrate is disclosed. The plurality of plate-shaped empty space patterns are formed by drilling holes in the substrate and annealing the substrate to form the spaced-apart plate-shaped empty space patterns.

Abstract: The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.

Abstract: This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.

Abstract: A method for forming a conductive feature comprises forming a metal film such as ruthenium then annealing the film in an atmosphere comprising a hydrogen-rich gas such as ammonia, hydrogen, borane, or diborane, or in another gas such as carbon monoxide. The anneal may decrease the carbon content of the film and results in a metal layer having a lower resistance than the preannealed metal film.

Abstract: A method used to form a cobalt metal layer on a silicon surface using an atomic layer deposition (ALD) process comprises a treatment of the silicon surface prior to cobalt formation. Treatment includes serial exposure to one or more cycles comprising a titanium nitride precursor or a tantalum nitride precursor, followed by an optional exposure to ammonia. After this treatment, the silicon surface is exposed to a metal organic cobalt such as cyclopentadienylcobalt dicarbonyl to form a cobalt precursor on the silicon surface, which is then exposed to hydrogen or ammonia to reduce the precursor to an ALD cobalt metal layer. Once this initial metal layer is formed, additional cobalt ALD layers may be completed to form a cobalt metal layer of a desired thickness.

Abstract: A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the non-metal components removed to form a treated layer of metal. A capacitor electrode can be formed including the treated layer and, optionally, additional treated layers. Preferably, treating the layer does not substantially oxidize the metal and the treated layers exhibit the property of inhibiting oxygen diffusion. The chemisorbing and the treating can be performed at a temperature below about 450° C. or preferably below about 350° C.

Abstract: A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the non-metal components removed to form a treated layer of metal. A capacitor electrode can be formed including the treated layer and, optionally, additional treated layers. Preferably, treating the layer does not substantially oxidize the metal and the treated layers exhibit the property of inhibiting oxygen diffusion. The chemisorbing and the treating can be performed at a temperature below about 450° C. or preferably below about 350° C.

Abstract: A method used to form a cobalt metal layer on a silicon surface using an atomic layer deposition (ALD) process comprises a treatment of the silicon surface prior to cobalt formation. Treatment includes serial exposure to one or more cycles comprising a titanium nitride precursor or a tantalum nitride precursor, followed by an optional exposure to ammonia. After this treatment, the silicon surface is exposed to a metal organic cobalt such as cyclopentadienylcobalt dicarbonyl to form a cobalt precursor on the silicon surface, which is then exposed to hydrogen or ammonia to reduce the precursor to an ALD cobalt metal layer. Once this initial metal layer is formed, additional cobalt ALD layers may be completed to form a cobalt metal layer of a desired thickness.

Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: In one aspect, the invention includes a method of forming a roughened layer of platinum, comprising: a) providing a substrate within a reaction chamber; b) flowing an oxidizing gas into the reaction chamber; c) flowing a platinum precursor into the reaction chamber and depositing platinum from the platinum precursor over the substrate in the presence of the oxidizing gas; and d) maintaining a temperature within the reaction chamber at from about 0° C. to less than 300° C. during the depositing. In another aspect, the invention includes a platinum-containing material, comprising: a) a substrate; and b) a roughened platinum layer over the substrate, the roughened platinum layer having a continuous surface characterized by columnar pedestals having heights greater than or equal to about one-third of a total thickness of the platinum layer.

Abstract: Methods for forming materials containing both zirconium and platinum, such as platinum-zirconium films, and articles containing such materials. The resultant films can be used as electrodes in an integrated circuit structure, particularly in a memory device such as a ferroelectric memory device. The platinum-zirconium materials can also be used in catalyst materials.

Abstract: An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.

Abstract: The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surface. The material can be subjected to aminolysis followed by oxidation to convert the material to metal oxide and/or semimetal oxide. The aminolysis and oxidation can be separate ALD steps relative to one another, or can be conducted in a reaction chamber in a common processing step.

Abstract: The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surface. The material can be subjected to aminolysis followed by oxidation to convert the material to metal oxide and/or semimetal oxide. The aminolysis and oxidation can be separate ALD steps relative to one another, or can be conducted in a reaction chamber in a common processing step.

Abstract: A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.

Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.

Abstract: Disclosed herein are techniques for using diblock copolymer (DBCP) films as etch masks to form small dots or holes in integrated circuit layers. In an embodiment, the DBCP film is deposited on the circuit layer to be etched. Then the DCBP film is confined to define an area of interest in the DCBP film in which hexagonal domains will eventually be formed. Such confinement can constitute masking and exposing the DCBP film using photolithographic techniques. Such masking preferably incorporates knowledge of the domain spacing and/or grain size of the to-be-formed domains in the area of interest to ensure that a predictable number and/or orientation of the domains will result in the area of interest, although this is not strictly necessary in all useful embodiments. Domains are then formed in the area of interest in the DBCP film which comprises a hexagonal array of cylindrical domains in a matrix. The film is then treated (e.g.

Abstract: The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. The first substrate surface has a first degree of roughness. Within a chamber, the first substrate surface is exposed to a PF3 comprising atmosphere under conditions effective to form a second substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms which has a second degree of roughness which is greater than the first degree of roughness. The substrate having the second substrate surface with the second degree of roughness is ultimately removed from the chamber.

Abstract: A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal layers is no greater than a monolayer. The seed film also includes either one or more conductive metal oxide layers or one or more silicon oxide layers, where either layer is no greater than a monolayer. The seed film can be used in plating, including electroplating, conductive layers, over at least a portion of the seed film. Conductive layers formed with the seed film can be used in fabricating an integrated circuit, including fabricating capacitor structures in the integrated circuit.