Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: The disclosed apparatus and method provides substrate impurity doping wherein a laser rapidly scans a substrate while simultaneously a uniform laminar flow of reactive gas is injected, the interaction of the laser radiation and the dopant results in a uniform diffusion of the dopant species in all planes (X,Y,Z) of the substrate. Laser energy density, wavelength, and pulse geometry are adjustable, in a simple system for volume manufacturing, to provide depth and dose control of the dopant. The system optics can be focused to form a high resolution laser beam to directly write the doping area pattern geometry. Alternatively the laser beam can be optically expanded to form a large diameter beam for large area diffusion of the dopant through a patterned mask.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A modular wafer edge processing apparatus is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The modular apparatus can be integrated into wafer tracks, cluster tools, and other volume manufacturing systems. The edge processing apparatus of this invention includes a laser that can either be contained inside the module, or mounted externally to feed multiple modules and thereby reduce system cost. The apparatus contains a beam delivery subsystem to direct a beam of radiation onto the edges of a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: Method of producing two-layer metal interconnections in a semiconductor integrated circuit structure coated with silicon dioxide. Masking material is deposited on the silicon dioxide. Openings are formed in the masking material and then in the silicon dioxide to expose contact areas on the integrated circuit structure. A first metal, tungsten, is deposited on the masking material and on the contact areas exposed at the openings. The masking material and the overlying tungsten are stripped off leaving tungsten only on the contact areas. A second metal, aluminum, is deposited over the silicon dioxide and the tungsten on the contact areas. Aluminum is selectively removed to form a pattern of conductive members of tungsten-aluminum on the contact areas and of aluminum over the silicon dioxide.

Abstract: Method of forming a substrate for fabricating CMOS FET's by forming sections of N and P-type conductivity in a body of silicon. Grooves are etched in the N and P-type sections to produce N and P-type sectors encircled by grooves. The surfaces of the grooves are oxidized, the grooves are filled with polycrystalline silicon, and exposed surfaces of the polycrystalline silicon are oxidized to form barriers which encircle the sectors and electrically isolate them. Shallow trenches are etched in regions of the body outside the N and P-type sectors and the trenches are filled with regions of silicon dioxide. A pair of complementary FET's are fabricated in the two sectors and a metal interconnection between them overlies a portion of a region of silicon dioxide.

Abstract: Method of forming a substrate for fabricating CMOS FET's by forming sections of N and P-type conductivity in a body of silicon. Grooves are etched in the N and P-type sections to produce N and P-type sectors encircled by grooves. The surfaces of the grooves are oxidized, the grooves are filled with polycrystalline silicon, and exposed surfaces of the polycrystalline silicon are oxidized to form barriers which encircle the sectors and electrically isolate them. Shallow trenches are etched in regions of the body outside the N and P-type sectors and the trenches are filled with regions of silicon dioxide. A pair of complementary FET's are fabricated in the two sectors and a metal interconnection between them overlies a portion of a region of silicon dioxide.

Abstract: The endpoints of plasma discharge processing operations (e.g., plasma stripping of photoresists and plasma etching) are determined by monitoring the light produced in the space surrounding the object being processed. The optical monitor includes a wavelength selective device which is adjusted to transmit light from a selected excited species, which includes particles from the surface being processed. The surface includes a layer of one material overlaying a second material. If the selected excited species includes particles of the first material, then the endpoint of the removal operation occurs when the monitored intensity falls below a predetermined threshold level. When the selected excited species includes particles of the second material, then the endpoint occurs when the monitored intensity rises above a preselected threshold level.