Patents by Inventor Eugene Youjun Chen
Eugene Youjun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8779538Abstract: In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.Type: GrantFiled: June 7, 2012Date of Patent: July 15, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Eugene Youjun Chen, Xueti Tang
-
Publication number: 20140008742Abstract: In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.Type: ApplicationFiled: June 7, 2012Publication date: January 9, 2014Inventors: Eugene Youjun Chen, Xueti Tang
-
Patent number: 8546896Abstract: A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.Type: GrantFiled: November 6, 2010Date of Patent: October 1, 2013Assignee: Grandis, Inc.Inventors: Daniel Lottis, Eugene Youjun Chen, Xueti Tang, Steven M. Watts
-
Patent number: 8456898Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.Type: GrantFiled: December 5, 2011Date of Patent: June 4, 2013Assignee: Grandis Inc.Inventors: Eugene Youjun Chen, Shengyuan Wang
-
Patent number: 8406045Abstract: Techniques and magnetic devices associated with a magnetic element are described that includes a presetting fixed layer having a presetting fixed layer magnetization, a free layer having a changeable free layer magnetization, and a fixed layer having a fixed layer magnetization, where a presetting current pulse applied between the presetting fixed layer and free layer operates to preset the free layer magnetization in advance of a write pulse. Techniques and magnetic devices associated with a magnetic element are described that includes a first terminal, a first magnetic tunnel junction, a second terminal, a second magnetic tunnel junction, and a third terminal, where a current pulse applied between the first and second terminal operate to switch the state of the first magnetic tunnel junction and a current applied between the second and third terminal operate to switch the state of the second magnetic tunnel junction.Type: GrantFiled: January 19, 2011Date of Patent: March 26, 2013Assignee: Grandis Inc.Inventors: Eugene Youjun Chen, Dmytro Apalkov
-
Publication number: 20120075927Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.Type: ApplicationFiled: December 5, 2011Publication date: March 29, 2012Applicant: GRANDIS INC.Inventors: Eugene Youjun Chen, Shengyuan Wang
-
Publication number: 20120012953Abstract: A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.Type: ApplicationFiled: November 6, 2010Publication date: January 19, 2012Applicant: GRANDIS, INC.Inventors: Daniel Lottis, Eugene Youjun Chen, Xueti Tang, Steven M. Watts
-
Patent number: 8072800Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.Type: GrantFiled: September 15, 2009Date of Patent: December 6, 2011Assignee: Grandis Inc.Inventors: Eugene Youjun Chen, Shengyuan Wang
-
Patent number: 7973349Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.Type: GrantFiled: August 1, 2006Date of Patent: July 5, 2011Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Patent number: 7916433Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: GrantFiled: June 15, 2010Date of Patent: March 29, 2011Assignee: Grandis, Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Publication number: 20110064969Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.Type: ApplicationFiled: September 15, 2009Publication date: March 17, 2011Applicant: Grandis Inc.Inventors: Eugene Youjun Chen, Shengyuan Wang
-
Patent number: 7859034Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.Type: GrantFiled: April 16, 2009Date of Patent: December 28, 2010Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Publication number: 20100247967Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: ApplicationFiled: June 15, 2010Publication date: September 30, 2010Applicant: GRANDIS, INC.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Patent number: 7791931Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: GrantFiled: March 28, 2009Date of Patent: September 7, 2010Assignee: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai
-
Patent number: 7777261Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.Type: GrantFiled: September 20, 2005Date of Patent: August 17, 2010Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Patent number: 7760474Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: GrantFiled: July 14, 2006Date of Patent: July 20, 2010Assignee: Grandis, Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Publication number: 20100072524Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.Type: ApplicationFiled: April 16, 2009Publication date: March 25, 2010Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Patent number: 7663848Abstract: A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.Type: GrantFiled: September 20, 2006Date of Patent: February 16, 2010Assignees: Grandis, Inc., Renesas Technology CorpInventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
-
Publication number: 20090213640Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: ApplicationFiled: March 28, 2009Publication date: August 27, 2009Applicant: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai
-
Patent number: 7515457Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: GrantFiled: February 24, 2006Date of Patent: April 7, 2009Assignee: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai