Abstract: Provided is a fuse structure of a semiconductor device. The fuse structure may include an insulating layer pattern structure, a fuse and a protecting layer pattern. The insulating layer pattern structure may be formed on a substrate. The insulating layer pattern structure may have an opening. The fuse may be formed in the opening. The protecting layer pattern may be formed in the opening of the insulating layer pattern structure to cover the fuse.

Abstract: A semiconductor package using a chip-embedded interposer substrate is provided. The chip-embedded interposer substrate includes a chip including a plurality of chip pads; a substrate having the chip mounted thereon and including a plurality of redistribution pads for redistributing the chip pads; bonding wires for connecting the chip pads to the redistribution pads; a protective layer having via holes for exposing the redistribution pads while burying the chip and the substrate; and vias connected to the redistribution pads through the via holes. The semiconductor package including chips of various sizes is fabricated using the chip-embedded interposer substrate.

Abstract: A semiconductor package may include a semiconductor chip, a molding layer which molds the semiconductor chip, and an interconnection which extends crossing an interface between the semiconductor chip and the molding layer and connects the semiconductor chip to an outside, wherein a shape of the interconnection is changed along the extended length thereof. According to the present invention, even if a mechanical stress or a thermal stress is applied to an interconnection, a crack does not occur in the interconnection or the interconnection is not disconnected. Therefore, a reliability of the semiconductor package is improved.

Abstract: In one embodiment, a semiconductor package disclosed herein can be generally characterized as including a resin substrate having a first recess, a first interconnection disposed on a surface of the first recess, a first semiconductor chip disposed in the first recess, and an underfill resin layer substantially filling the first recess and covering a side surface of the first semiconductor chip. The first semiconductor chip is electrically connected to the first interconnection.

Abstract: A device includes a base substrate, a package including an encapsulated die, the package at least partially embedded in the base substrate, and a wiring portion on the package and extending across at least a portion of the base substrate adjacent to the package.

Abstract: A semiconductor chip package including a semiconductor chip including a first surface having bonding pads, a second surface facing the first surface, and sidewalls; a molding extension part surrounding the second surface and the sidewalls of the semiconductor chip; redistribution patterns extending from the bonding pads over the molding extension part, and electrically connected to the bonding pads; bump solder balls on the redistribution patterns; and a molding layer configured to cover the first surface of the semiconductor chip and the molding extension part, while exposing portions of each of the bump solder balls. The molding layer has concave meniscus surfaces between the bump solder balls adjacent to each other.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.

Abstract: Provided are a wafer level stacked package with a via contact in an encapsulation portion, and a manufacturing method thereof. A plurality of semiconductor chips and encapsulation portions may be vertically deposited and electrically connected through a via contact that may be vertically formed in the encapsulation portion. Thus, an effective fan-out structure may be produced, vertical deposition may be available regardless of the type of a semiconductor device, and productivity may be improved.

Abstract: Provided are a semiconductor chip package, a semiconductor package, and a method of fabricating the same. In some embodiments, the semiconductor chip packages includes a semiconductor chip including an active surface, a rear surface, and side surfaces, bump solder balls provided on bonding pads formed on the active surface, and a molding layer provided to cover the active surface and expose portions of the bump solder balls. The molding layer between adjacent bump solder balls may have a meniscus concave surface, where a height from the active surface to an edge of the meniscus concave surface contacting the bump solder ball is about a 1/7 length of the maximum diameter of a respective bump solder ball at below or above a section of the bump solder ball having the maximum diameter.

Abstract: A semiconductor package using a chip-embedded interposer substrate is provided. The chip-embedded interposer substrate includes a chip including a plurality of chip pads; a substrate having the chip mounted thereon and including a plurality of redistribution pads for redistributing the chip pads; bonding wires for connecting the chip pads to the redistribution pads; a protective layer having via holes for exposing the redistribution pads while burying the chip and the substrate; and vias connected to the redistribution pads through the via holes. The semiconductor package including chips of various sizes is fabricated using the chip-embedded interposer substrate.

Abstract: Provided are methods of fabricating a circuit board and a semiconductor package, and a circuit board and a semiconductor package fabricated using the methods. The circuit board comprises: a lower wiring pattern disposed on an upper surface of a resin substrate comprising a filler; a resin layer disposed on the lower wiring pattern; an upper wiring pattern comprising a bonding pad disposed on the resin layer; and a passivation layer comprising an upper opening exposing the bonding pad. The resin substrate comprises a substrate opening exposing a lower surface of the lower wiring pattern.

Abstract: Example embodiments relate to semiconductor packages and methods of forming the same. A semiconductor package according to example embodiments may include a printed circuit board (PCB), a first semiconductor chip mounted on the PCB, and a chip package mounted on the first semiconductor chip. The chip package may be in direct contact with the first semiconductor chip.

Abstract: A semiconductor chip package capable of improving reliability at a chip interconnection portion and improving reliability in a solder joint by reducing thermal and mechanical stresses at an external portion of the package including a solder ball land, and a method of fabricating the package are provided. The method of fabricating a semiconductor chip package includes providing a substrate; forming a first underfill on a first portion of the substrate; forming a second underfill at a chip interconnection portion of the substrate; and mounting a semiconductor chip on the chip interconnection portion using conductive bumps. In the method, the second underfill is formed of a material having a modulus higher than the first underfill.

Abstract: A multi-chip package includes a mounting substrate, a first semiconductor chip, a second semiconductor chip, a reinforcing member, conductive wires and an encapsulant. The first semiconductor chip is disposed on the mounting substrate. The second semiconductor chip is disposed on the first semiconductor chip. An end portion of the second semiconductor chip protrudes from a side portion of the first semiconductor chip. A reinforcing member is disposed on an overlapping region of the second semiconductor chip where the second semiconductor chip overlaps with the side portion of the first semiconductor chip such that the reinforcing member decreases downward bending of the second semiconductor chip from the side portion of the first semiconductor chip. The conductive wires electrically connect the first and second semiconductor chips to the mounting substrate. The encapsulant is disposed on the mounting substrate to cover the first and second semiconductor chips and the conductive wires.

Abstract: In a semiconductor device stack package and a method of forming the same, the package comprises: a substrate; a plurality of lower chips stacked on the substrate and having an active surface oriented in a direction toward the substrate; and at least one upper chip disposed on the lower chips and connected to the substrate via a bump disposed between the lower chips. As no wire loops are formed, there is no increase in the height of the stack package, and the electrical path is shortened, thereby improving the electric performance of the stack package. Also, the semiconductor device stack package has a flip chip structure, and thus a plurality of semiconductor chips can be stacked in various manners.

Abstract: A flip-chip assembly comprises a semiconductor chip, a substrate, a first buffer layer, a second buffer layer and a conductive bump. The semiconductor chip includes a first region and a second region adjacent to the first region. The substrate is disposed under the semiconductor chip. The first buffer layer is disposed between the first region of the semiconductor chip and the substrate. The second buffer layer is disposed between the second region of the semiconductor chip and the substrate. The conductive bump is formed through the second buffer layer and electrically connects the semiconductor chip to the substrate.

Abstract: According to an example embodiment, a method of fabricating an electronic device may include preparing a substrate with a first area and a second area. A metal interconnection may be formed on the substrate extending from the first area to the second area. An insulating layer may be formed on the substrate. A sacrificial pattern electrically connected to the metal interconnection and serving as a sacrificial anode for cathodic protection against corrosion of the metal interconnection may be formed on the second area. An opening to expose the metal interconnection on the first area may be formed by patterning the insulating layer. An electronic device fabricated by a method according to an example embodiment may include a substrate, a metal interconnection, an insulating layer, and/or a sacrificial pattern.

Abstract: A highly reliable stack type semiconductor package, which does not have a problem of interconnection areas becoming disconnected due to thermal expansion. The semiconductor package includes a second die adhesive, which is formed between a first semiconductor chip and a second semiconductor chip, applied to the upper surface of the first semiconductor chip, and extends to the wire forming units. The second die adhesive is selected to have a bulk modulus greater than 1 GPa to prevent electric disconnection due to breakage of wires in the stack type semiconductor package during thermal stress.

Abstract: The present invention provides a stacked chip package having at least one heat transfer wire. The heat transfer wire is disposed between the stacked chips and at least one end of each transfer wire is connected to a dummy pad provided on the board. Therefore, the heat generated by the chips and trapped between the chips can be effectively dissipated. The heat transfer wires can be formed on the uppermost chip of the stacked chips to enhance the heat dissipation. In addition, by controlling the number or the size of the heat transfer wire, the thermal characteristics of the stacked chip package can be modified.

Abstract: The present invention provides a stacked chip package having at least one heat transfer wire. The heat transfer wire is disposed between the stacked chips and at least one end of each transfer wire is connected to a dummy pad provided on the board. Therefore, the heat generated by the chips and trapped between the chips can be effectively dissipated. The heat transfer wires can be formed on the uppermost chip of the stacked chips to enhance the heat dissipation. In addition, by controlling the number or the size of the heat transfer wire, the thermal characteristics of the stacked chip package can be modified.