Abstract: Provided are a method of securing a password in a web page and a recording medium storing a program for executing the method. The method of accessing a web page provided by a specific web server through a web browser of a user terminal and then securing a password value input from a keyboard of the user terminal to a password input window provided by the web page includes encoding the password value input to the password input window, and then decoding the encoded password value at the same time when a log-in event of the web page occurs. According to the method, it is possible to prevent a password value input to a password input window of a web page from being intercepted by malicious programs before the password value is transmitted to the corresponding web server.

Abstract: Disclosed is a metal-metal oxide resistive memory device including a lower conductive layer pattern disposed in a substrate. An insulation layer is formed over the substrate, including a contact hole to partially expose the upper surface of the lower conductive layer pattern. The contact hole is filled with a carbon nanotube grown from the lower conductive layer pattern. An upper electrode and a transition-metal oxide layer made of a 2-components material are formed over the carbon nanotube and the insulation layer. The metal-metal oxide resistive memory device is adaptable to high integration and operable with relatively small power consumption by increasing the resistance therein.

Abstract: A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Abstract: A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

Abstract: In a method of forming a ferroelectric capacitor, a lower electrode layer is formed on a substrate. A first crystalline layer is formed on the lower electrode layer. A ferroelectric layer is formed on the first crystalline layer. The first crystalline layer one of prevents a component of the ferroelectric layer from diffusing into the lower electrode layer and mitigates fatigue of the ferroelectric layer. An upper electrode layer is formed on the ferroelectric layer.

Abstract: A nonvolatile memory device includes a tunneling insulating layer on a semiconductor layer. A charge storage layer is on the tunneling insulating layer. A blocking insulating layer having a Perovskite structure is on the charge storage layer. A gate conductive layer having a Perovskite structure is on the blocking insulating layer.

Abstract: A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.

Abstract: An integrated circuit device includes a storage cell including an upper electrode and a lower electrode on a substrate, and a conductive hard mask pattern directly on the upper electrode of the storage cell opposite the lower electrode. The upper electrode is formed of a metal softer than the conductive hard mask pattern. The device further includes an interlayer on the substrate having an alignment key recess therein. The alignment key recess extends towards the substrate beyond a depth of the upper electrode. An alignment key pattern may extend towards the substrate beyond the depth of the upper electrode on opposing sidewalls and on a surface therebetween of the alignment key recess. The alignment key pattern may have a distinct step difference between portions thereof on the opposing sidewalls and portions thereof on the surface therebetween. Related methods are also discussed.

Abstract: A washer includes an outer cabinet, a washtub disposed in the cabinet, a rotating tub rotating by a driving motor and being disposed in the washtub, a top cover disposed on top of the cabinet, the top cover being provided with an opening for loading and unloading clothes, a control box-receiving portion formed on a portion of the top cover, a control box having a circuit board for controlling the washer, the control box removably received in the control box-receiving portion, and a protecting cover for covering the portion of the top cover where the control box is received.

Abstract: Provided are FeRAM device constructions and fabrication methods that provide for the direct connection of metal patterns to ferroelectric capacitors. The FeRAM device constructions utilize a combination of one or more barrier layers incorporated in conductive plugs, barrier layers incorporated in primary conductive patterns or conductive patterns formed using one or more noble metals to suppress parametric drift associated with conventional FeRAM constructions.

Abstract: A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Abstract: A laundry aid dispenser for a washing machine includes a top cover disposed above a washtub for receiving clothes, a receiving cavity defined by an upper wall, a bottom wall, opposing sidewalls, and an inner wall that are formed by indenting a portion of the top cover, a shower member comprising a shower portion coupled on the upper wall defining the receiving cavity and a warm water guide portion defined by a rear wall of the shower portion with the inner wall defining the receiving cavity, and a laundry aid container for storing laundry aids, the laundry aid container being inserted in the receiving cavity under the shower member. The laundry aid container has at least two chambers each for storing a different laundry aid.

Abstract: A method of forming a ferroelectric device includes forming a ferroelectric pattern on a substrate, the ferroelectric pattern including a ferroelectric material including titanium and oxygen, forming an insulating layer on the ferroelectric pattern, and planarizing the insulating layer using a slurry until the ferroelectric pattern is exposed, wherein the ferroelectric pattern serves as a polishing stop pattern and the slurry includes ceria.

Abstract: A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

Abstract: An apparatus and method for driving a plasma display panel wherein an initializing discharge can be weakened to lower a dark room brightness and an initialization time can be shortened to permit a single scanning. In the apparatus, a sensing device senses an electrical signal with an initialization waveform applied from a voltage source to a display panel. A controlling device controls said electrical signal with an initialization waveform applied from the voltage source to the display panel by the sensed electrical signal.

Abstract: In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer.

Abstract: Disclosed is a metal-metal oxide resistive memory device including a lower conductive layer pattern disposed in a substrate. An insulation layer is formed over the substrate, including a contact hole to partially expose the upper surface of the lower conductive layer pattern. The contact hole is filled with a carbon nanotube grown from the lower conductive layer pattern. An upper electrode and a transition-metal oxide layer made of a 2-components material are formed over the carbon nanotube and the insulation layer. The metal-metal oxide resistive memory device is adaptable to high integration and operable with relatively small power consumption by increasing the resistance therein.

Abstract: A continuous drain hose for an electrical appliance having a water outlet is disclosed. The drain hose comprises a first cylindrical end portion being connectable to the water outlet, a second end portion being connectable to a drain pipe and comprising a bellows that is able to form a permanent bend when a temporary bending force is applied thereto, and a flexible corrugated portion connected between the first cylindrical end portion and the second end portion. The bellows is also permanently expandable or retractable when a temporary pulling or pressing force is applied thereto. The drain hose further comprises an elastic connection member, which is integrally molded to the first cylindrical end portion and is sealably connectable to the water outlet. The first cylindrical end portion comprises at least one annular ring externally formed thereon so as to prevent the molded elastic connection member from being disengaged from the first cylindrical end portion.

Abstract: Provided herein are a video apparatus and a method for controlling the same, wherein a caption is displayed according to the volume level of surrounding noise. The method comprises detecting the volume level of noise surrounding the video apparatus, obtaining an audio volume level, comparing the surrounding noise volume level with the obtained audio volume level, and displaying a caption according to a result of the comparison.

Abstract: An integrated circuit device includes a storage cell including an upper electrode and a lower electrode on a substrate, and a conductive hard mask pattern directly on the upper electrode of the storage cell opposite the lower electrode. The upper electrode is formed of a metal softer than the conductive hard mask pattern. The device further includes an interlayer on the substrate having an alignment key recess therein. The alignment key recess extends towards the substrate beyond a depth of the upper electrode. An alignment key pattern may extend towards the substrate beyond the depth of the upper electrode on opposing sidewalls and on a surface therebetween of the alignment key recess. The alignment key pattern may have a distinct step difference between portions thereof on the opposing sidewalls and portions thereof on the surface therebetween. Related methods are also discussed.