Abstract: A device for controlling refueling of hydrogen includes one or more hydrogen refueling facilities for refueling a hydrogen-powered vehicle with hydrogen, and a controller that collects state information and control data of the hydrogen refueling facilities, performs artificial intelligence learning based on the state information and the control data, and controls operations of the hydrogen refueling facilities based on the learning result.

Abstract: The present disclosure relates to the preparation of citrullinated vimentin antigen-specific immune tolerogenic dendritic cells and a composition for preventing or treating heart failure after myocardial infarction comprising the same. According to the present disclosure, it is confirmed that immune tolerogenic dendritic cells differentiated by treating immature dendritic cells with citrullinated vimentin regulate the expression of immune-related factors and have an excellent therapeutic effect on heart failure caused by myocardial infarction.

Abstract: Silicon oxide-based negative electrode active materials and negative electrodes for a secondary battery are disclosed. In an embodiment, a negative electrode active material for a secondary battery includes a silicon oxide particle including a metal silicate; and a hydrocarbon coating layer on the silicon oxide particle, wherein a peak Pa in a Fourier transform infrared (FT-IR) spectral analysis of the negative electrode active material is detected in a range from 2880 cm?1 to 2950 cm?1 and a peak Pb in a FT-IR spectral analysis of the negative electrode active material is detected in a range from 2800 cm?1 to 2865 cm?1.

Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: The present invention relates to a signal sequence for expressing a CRM197 protein in Escherichia coli and secreting same into the periplasm, and a use thereof, and more specifically, to: a signal sequence for expressing a CRM197 protein; a nucleic acid for coding the signal sequence; a nucleic acid construct or expression vector comprising the nucleic acid and a CRM197 protein gene; a recombinant microorganism having the nucleic acid construct or expression vector introduced therein; and a CRM197 protein production method comprising a step for culturing the recombinant microorganism.

Abstract: Proposed is an apparatus for checking a golf divot, which checks a position where a golf club comes into contact with the ground, a ground contact area, or a trace of the golf club when a user hits a golf ball with a golf club, so as to enable improvement of the user's swing, the apparatus including: a ball resting plate body having multiple pin-holes formed therethrough; multiple pins which are inserted into the pin-holes of the ball resting plate body, respectively, to vertically move and installed to allow upper end portions thereof to protrude upward from the ball resting plate body; and a ball resting plate body support means which supports the ball resting plate body in a state where the ball resting plate body is spaced a predetermined height apart from the ground.

Abstract: Proposed is a posture comparison and correction method using an application configured to check two golf images and result data in an overlapping state, the posture comparison and correction method being capable of analyzing an image of a user captured through a portable device, displaying the swing speed of a golf club, the swing angle of the golf club, the swing form of the golf club, the angle of a head of the golf club, the hitting angle of a golf ball, the speed of the golf ball, the flying distance of the golf ball, and the trajectory of the golf ball on a screen, and comparing the image of the user with an image of a pro golfer transmitted from a server on a single screen, whereby it is possible to correct the posture of the user.

Abstract: The present invention relates to an apparatus for checking a golf divot, which checks a position where a golf club comes into contact with the ground, a ground contact area, or a trace of the golf club when a user hits a golf ball with a golf club, so as to enable improvement of the user's swing, the apparatus comprising: a ball resting plate body having multiple pin-holes formed therethrough; multiple pins which are inserted into the pin-holes of the ball resting plate body, respectively, to vertically move and installed to allow upper end portions thereof to protrude upward from the ball resting plate body; a ball resting plate body support means which supports the ball resting plate body in a state where the ball resting plate body is spaced a predetermined height apart from the ground; a sensing unit which is installed under the pins, senses lowering of the pins, and generates a signal; a pin returning means which raises the pins to the original state, when the pins are lowered by a stroke of a golf club

Abstract: Provided are the tolerogenic dendritic cells for treating a myocardial infarction and a method for preparing the same, and more particularly, the tolerogenic dendritic cells for treating a myocardial infarction, which can treat cardiac insufficiency that occurs by excessive remodeling of left ventricle in the heart muscle recovery process after an acute myocardial infarction, and a method for preparing the tolergenic dendritic cells. According to the present invention, the inflammatory reaction and the excessive remodeling of left ventricle in the heart muscle recovery process after a myocardial infarction can be inhibited, and thus, the incidence rate of cardiac insufficiency can be significantly reduced, thereby being effectively used for treating a myocardial infarction.

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

Abstract: A method for driving a nonvolatile memory device using a resistive element is provided. The method includes storing data in a page buffer, the data including a first data block and a second data block, writing the first data block to a memory cell, performing a verify-read operation on the first data block of the memory cell region, writing the second data block to the memory cell region, and performing a verify-read operation on the second data block of the memory cell region, wherein the first data block and the second data block are smaller than the page buffer in size.

Abstract: Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.

Abstract: The present invention relates to antibodies against angiopoietins 1 and 2, and derivatives of these antibodies. More specifically, the present invention relates to therapeutic use of the antibodies and fragment thereof which specifically bind to angiopoietins 1 and 2.

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 ?m.

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 ?m.

Abstract: A thin film transistor substrate includes a gate metal pattern comprising a gate line extending in a first direction and a gate electrode electrically connected to the gate line, an active pattern overlapping the gate electrode, an etch-stop layer disposed on the active pattern and having a first through hole and a second through hole adjacent to the first through hole, a data metal pattern comprising a data line extending in a second direction crossing the first direction, a source electrode electrically connected to the active pattern through the first through hole and a drain electrode electrically connected to the active pattern through the second through hole and a first passivation layer disposed on the data metal pattern.

Abstract: A method of managing medical information may include receiving, from a user, and registering an association between at least one item being included in each of a plurality of medical record charts, a first item in a first medical record chart and a second item in a second medical chart being independent from each other. The method may also include receiving a request for an access for a first medical record chart from the user and checking (or determining) whether at least one second item associated with at least one first item in the first medical record chart exists, the at least one second item being included in the plurality of the medical record charts.

Abstract: Provided are the tolerogenic dendritic cells for treating a myocardial infarction and a method for preparing the same, and more particularly, the tolerogenic dendritic cells for treating a myocardial infarction, which can treat cardiac insufficiency that occurs by excessive remodeling of left ventricle in the heart muscle recovery process after an acute myocardial infarction, and a method for preparing the tolergenic dendritic cells. According to the present invention, the inflammatory reaction and the excessive remodeling of left ventricle in the heart muscle recovery process after a myocardial infarction can be inhibited, and thus, the incidence rate of cardiac insufficiency can be significantly reduced, thereby being effectively used for treating a myocardial infarction.

Abstract: A nonvolatile memory device includes a buffer memory, a read circuit configured to read first data stored in the buffer memory in a first read operation, and a write circuit configured to write second data in the buffer memory in a first write operation, wherein the first write operation is performed when a first internal write command is generated during the first read operation.