Abstract: The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc (a?0,b>0,c?0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc layer having an n-type conductivity and a thickness of 5 ? to 500 ? for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc layer. According to the present invention, a SiaCbNc (a?0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

Abstract: The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a?0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a?O).

Abstract: The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer L3 made of InxGa1-xN, an electron supply layer L4 made of n-GaN or n-AlyGa1-yN and a crystal restoration layer L5 made of InzGa1-zN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer L1 made of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L2, thereby the lattice mismatch between the lower contact layer (20) and the active layer (30) can be reduced.

Abstract: The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x?0, y?0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1?x?y)N(0?x?1, 0?y?1, 0?x+y?1) of the hexagonal structure and SixCyNz(x?0, y?0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x?0, y?0, x+y>0, z>0) material.

Abstract: The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGalnN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.