Patents by Inventor Eun Jeong Jeong

Eun Jeong Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9315618
    Abstract: Conjugated polymers (CPs) achieve directed alignment along an applied flow field and a dichroic ratio of as high as 16.67 in emission from well-aligned thin films and fully realized anisotropic optoelectronic properties of CPs in field-effect transistor (FET).
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: April 19, 2016
    Assignee: The Regents Of The University Of Michigan
    Inventors: Jinsang Kim, Bong-Gi Kim, Eun Jeong Jeong
  • Publication number: 20150011721
    Abstract: Conjugated polymers (CPs) achieve directed alignment along an applied flow field and a dichroic ratio of as high as 16.67 in emission from well-aligned thin films and fully realized anisotropic optoelectronic properties of CPs in field-effect transistor (FET).
    Type: Application
    Filed: March 14, 2014
    Publication date: January 8, 2015
    Inventors: Jinsang KIM, Bong-Gi Kim, Eun Jeong Jeong
  • Patent number: 8847206
    Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-il Park, Byung-wook Yoo, Do-hwan Kim, Sang-yoon Lee, Bang-lin Lee, Eun-jeong Jeong
  • Patent number: 8597423
    Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: December 3, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Jong Baek Seon, Joo Young Kim
  • Patent number: 8525131
    Abstract: Compositions providing metal-independent phosphorescence due to a directed heavy atom effect are provided. Methods of providing a phosphorescent composition are also provided where a directed heavy atom effect is maintained to cause the composition to be phosphorescent. Manufacture of phosphorescent compositions using intermolecular and intramolecular directed heavy atom effects are disclosed.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: September 3, 2013
    Assignee: The Regents of The University of Michigan
    Inventors: Jinsang Kim, Onas Bolton, Kangwon Lee, Eun Jeong Jeong, Bong-Gi Kim
  • Patent number: 8395146
    Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Seok Hahn, Eun Kyung Lee, Sang Yoon Lee, Eun Jeong Jeong, Joo Young Kim
  • Patent number: 8373161
    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Hyun Sik Moon, Byung Wook Yoo, Sang Yoon Lee, Bang Lin Lee, Jeong Il Park, Eun Jeong Jeong
  • Patent number: 8373158
    Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-il Park, Byung-wook Yoo, Do-hwan Kim, Sang-yoon Lee, Bang-lin Lee, Eun-jeong Jeong
  • Patent number: 8362471
    Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: January 29, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Hyun Sik Moon, Jeong Ii Park, Sang Yoon Lee
  • Patent number: 8313978
    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: November 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bang Lin Lee, Kook Min Han, Jung Han Shin, Sang Yoon Lee, Eun Jeong Jeong
  • Publication number: 20120248337
    Abstract: Compositions providing metal-independent phosphorescence due to a directed heavy atom effect are provided. Methods of providing a phosphorescent composition are also provided where a directed heavy atom effect is maintained to cause the composition to be phosphorescent. Manufacture of phosphorescent compositions using intermolecular and intramolecular directed heavy atom effects are disclosed.
    Type: Application
    Filed: November 24, 2010
    Publication date: October 4, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Jinsang Kim, Onas Bolton, Kangwon Lee, Eun Jeong Jeong, Bong-Gi Kim
  • Publication number: 20120228595
    Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Inventors: Eun Jeong JEONG, Jong Baek SEON, Joo Young KIM
  • Patent number: 8212030
    Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: July 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Jong Baek Seon, Joo Young Kim
  • Publication number: 20120104377
    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
    Type: Application
    Filed: January 9, 2012
    Publication date: May 3, 2012
    Inventors: Do Hwan KIM, Hyun Sik Moon, Byung Wook Yoo, Sang Yoon Lee, Bang Lin Lee, Jeong Il Park, Eun Jeong Jeong
  • Patent number: 8153267
    Abstract: Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Hyun Sik Moon, Jung Seok Hahn, Kyung Seok Son, Eun Kyung Lee
  • Publication number: 20120077949
    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
    Type: Application
    Filed: September 23, 2011
    Publication date: March 29, 2012
    Inventors: Bang Lin Lee, Kook Min Han, Jung Han Shin, Sang Yoon Lee, Eun Jeong Jeong
  • Patent number: 8114704
    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: February 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Hyun Sik Moon, Byung Wook Yoo, Sang Yoon Lee, Bang Lin Lee, Jeong Il Park, Eun Jeong Jeong
  • Patent number: 8097694
    Abstract: Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: January 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Hyun Sik Moon, Kook Min Han
  • Patent number: 8057848
    Abstract: A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: November 15, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Jong-Jin Park, Tae-Yong Noh, Myeong-Suk Kim, Sung-Hun Lee, Eun-Jeong Jeong, Dong-Woo Shin, Lyong-Sun Pu
  • Patent number: 8058457
    Abstract: A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: November 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kook Min Han, Eun Jeong Jeong, Chang Ju Kim, Eun Kyung Lee