Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract: A heteroacene compound includes a di-thieno-benzo-thieno-thiophene derivative, in which all six rings may be fused together, an organic thin film including the same, and an electronic device that includes the thin film as a carrier transport layer. The compound of example embodiments may have a compact planar structure to thus realize improved solvent solubility and processability. When the compound is applied to electronic devices, a deposition process or a room-temperature solution process may be applied, and as well, intermolecular packing and stacking may be efficiently realized, resulting in improved electrical properties, including increased charge mobility.

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

Abstract: Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent for dissolving the above components. The organic insulator of example embodiments may be provided in the form of a solid insulating film, which may increase charge mobility while decreasing the threshold voltage and operating voltage of OTFTs, and which also may generate relatively slight hysteresis.

Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

Abstract: Disclosed is a method of fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes, and an organic semiconductor layer, in which the surface of the metal oxide source/drain electrodes or of the metal oxide source/drain electrodes and gate insulating layer is treated with a self assembled monolayer-forming compound containing a dichlorophosphoryl group. According to the method of example embodiments, the work function of the metal oxide of the source/drain electrodes may be increased to be higher than that with no SAM-forming electrode, thus making it possible to fabricate an improved organic thin film transistor having increased charge mobility.

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract: Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecular cross-linking, between source/drain electrodes and an organic semiconductor layer, thus exhibiting improved electrical properties, e.g., increased charge mobility, and to a method of manufacturing the organic thin film transistor.

Abstract: Disclosed are organic semiconductor materials, including mixtures of relatively low molecular weight aromatic ring compounds, in which at least one nitrogen atom or oxygen atom is present as a heteroatom in the aromatic ring compounds for forming hydrogen bonds between the heteroatom(s) and adjacent molecules and thereby increase intermolecular stacking. Organic semiconductor layers formed using such organic semiconductor materials will, accordingly, exhibit increased intermolecular stacking and associated improvements in one or more electrical properties of the semiconductor layer. Organic thin film transistors incorporating such organic semiconductor layers will tend to exhibit improved transistor properties including, for example, increased carrier mobility and reduced off-state leakage current. Further, the organic semiconductor layers may be manufactured using conventional room temperature processes, for example, spin coating or printing, thereby simplifying the fabrication process.

Abstract: Disclosed are an organic insulating film composition for use in the formation of an insulating film having a dual thickness using the hydrophilic/hydrophobic difference between a substrate and a gate electrode, and a method of manufacturing an organic insulating film having a dual thickness using the same. In a display device using a thin film transistor including the organic insulating film of example embodiments, flickering caused by parasitic capacitance may be decreased, and thus reliability may be increased, enabling a simpler manufacturing process and decreased manufacturing cost.

Abstract: Disclosed herein is a composition for forming an organic insulating film and an organic insulating film formed from the composition. An exemplary composition comprises an insulating polymer having a maleimide structure, a crosslinking agent and a photoacid generator so as to form a crosslinked structure. The organic insulating film has excellent chemical resistance to organic solvents used in a subsequent photolithographic process and can improve the electrical properties of transistors.

Abstract: Example embodiments of the present invention relate to an organic-inorganic hybrid polymer having capped terminal hydroxyl groups and an organic insulator composition including the hybrid polymer and methods thereof. The organic-inorganic hybrid polymer may be prepared by capping terminal hydroxyl groups of silanol moieties that do not participate in the formation of an intermolecular network in an organic-inorganic hybrid material, with an organosilane compound. The organic-inorganic hybrid polymer may increase the hysteresis and physical properties of an organic thin film transistor. The organic-inorganic hybrid polymer may be more effectively utilized in the manufacture of liquid crystal displays (LCDs).

Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

Abstract: Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

Abstract: A photosensitive metal nanoparticle and a method of forming a conductive pattern using the same, wherein a self-assembled monolayer of a thiol compound or isocyanide compound having a terminal reactive group is formed on a surface of the metal nanoparticle and a photosensitive group is introduced to the terminal reactive group. The photosensitive metal nanoparticles can easily form a conductive film or pattern having excellent conductivity upon exposure to UV, and thus can be applied for antistatic washable sticky mats or shoes, conductive polyurethane printer rollers, electromagnetic interference shielding, etc.

Abstract: A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.

Abstract: A donor substrate for forming a nano conductive film includes a base substrate and a transferring layer that is disposed on the base substrate. The transferring layer includes nano conductive particles and an organic semiconductor. A method of patterning a nano conductive film is provided, wherein a donor substrate in which nano conductive particles are dispersed by employing an organic semiconductor having low molecular weight as a binder is prepared, and nano conductive particles are patterned on a receptor substrate by employing the donor substrate. The method can be used to prepare patterns of various devices including a display device such as an OLED and an OTFT. Such a device can be prepared simply and economically by preparing a device comprising nano conductive particles and an organic semiconductor in wet basis even without deposition.

Abstract: Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.

Abstract: An organic semiconductor polymer for a thin film transistor, the polymer comprising a unit having n-type semiconductor properties and a unit having p-type semiconductor properties in the polymer backbone, and an organic thin film transistor using the same.

Abstract: Disclosed is an organic gate insulating film and an organic thin film transistor using the same, in which a photo-alignment group is introduced into an organic insulating polymer, so that an organic active film has superior alignment, thereby increasing mobility. Further, the organic active film has a larger grain size, enhancing transistor characteristics.