Patents by Inventor Eun-Jin Yun

Eun-Jin Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180239696
    Abstract: A storage device includes nonvolatile memory devices, a connector that includes connection terminals, and a controller that communicates with an external host device through the connector and to control the nonvolatile memory devices. The connector provides the external host device with detection information in response to the connector being connected with the external host device. Power is supplied from the external host device to the controller and the nonvolatile memory devices through the connector in response to the providing of the detection information. The connector provides the external host device with information of a communication type in which the controller communicates with the external host device, after the power is supplied. The communication type is one of a first communication type and a second communication type. The controller configures the connection terminals to correspond to a single or dual port based on a signal received from the external host device.
    Type: Application
    Filed: January 5, 2018
    Publication date: August 23, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gwangman LIM, Eun-Jin YUN
  • Publication number: 20180239684
    Abstract: A storage device and a method for indicating a state of a storage device are provided. The storage device may include nonvolatile memory devices, a controller that controls the nonvolatile memory devices, a display device, and a display controller that controls the display device. The display controller may control the display device to display different colors respectively corresponding to states of the storage device. The states may include an access state in which the controller accesses the nonvolatile memory devices according to a request from an external host device, a standby state in which the controller is ready to perform the request from the external host device, a device fail state in which the controller and the nonvolatile memory devices cannot operate, and a replacement state in which the controller and the nonvolatile memory devices are selected for replacement.
    Type: Application
    Filed: December 20, 2017
    Publication date: August 23, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gwangman LIM, Eun-Jin YUN
  • Publication number: 20180143780
    Abstract: A storage system performing data deduplication includes a storage device configured to store data received from a host, and a controller configured to receive the data and an index associated with the data received from the host. The controller includes a memory configured to store mapping information and a reference count, the mapping information associating the index received from the host with a physical address of the storage system, the reference count associated with the index received from the host. The controller determines whether the data received from the host corresponds to a duplicate of data previously stored in the storage device by reading, from the memory, the mapping information and the reference count, the reading based on the index received from the host. The controller performs a deduplication process by updating the reference count if the data received from the host corresponds to the duplicate of data previously stored.
    Type: Application
    Filed: November 16, 2017
    Publication date: May 24, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-kug CHO, Byoung-young AHN, Eun-jin YUN, Yang-seok KI, Sil-wan CHANG, Seok-chan LEE
  • Publication number: 20180039578
    Abstract: A method of operating a data storage device in which a nonvolatile memory is included and a mapping table defining a mapping relation between a physical address and a logical address of the nonvolatile memory is stored in a host memory buffer of a host memory includes requesting a host for an asynchronous event based on information about a map miss that the mapping relation about the logical address received from the host is not included in the mapping table, receiving information about the host memory buffer adjusted by the host based on the asynchronous event, and updating the mapping table to the adjusted host memory buffer with reference to the information about the host memory buffer. A method of operating a data storage device according to example embodiments of the inventive concept can reduce the number of map misses or improve reliability of a nonvolatile memory.
    Type: Application
    Filed: July 18, 2017
    Publication date: February 8, 2018
    Inventors: EUN-JIN YUN, SIL WAN CHANG
  • Patent number: 9812224
    Abstract: Provided are a data storage system, a data storage device and a RAID controller, which can control RAID operation and a RAID operating method of a memory device by transmitting a RAID configuration signal to the memory device. The data storage system includes a memory device that may include m nonvolatile memories, where m is a natural number, and a memory controller that may program data to at least the first to mth pages. The data storage system also includes a RAID controller that may generate a RAID configuration signal, including a RAID operation signal for determining whether to activate or deactivate a RAID operation of the memory device, and that may transmit the data and the RAID configuration signal to the memory controller.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: November 7, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Eun-Jin Yun
  • Publication number: 20170277432
    Abstract: A data storage device and a method of operating the same are provided. The data storage device includes a first non-volatile memory device, a second non-volatile memory device, and a management module. The management module receives a multi-access command including first and second physical addresses which are different from each other from a host, generates and sends a first access command including the first physical address to the first non-volatile memory device, and generates and sends a second access command including the second physical address to the second non-volatile memory device. The data storage device performs the first and second access commands on the first and second physical addresses, respectively.
    Type: Application
    Filed: February 17, 2017
    Publication date: September 28, 2017
    Inventors: Eun Jin YUN, Sil Wan CHANG
  • Patent number: 9483348
    Abstract: A method of reading from a memory module which includes a plurality of memories is provided. The method includes reading data corresponding to a plurality of burst length units from the plurality of memories; correcting an error of the read data using a storage error correction code; and outputting the error corrected data by a unit of data corresponding to one burst length unit.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: November 1, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Eun-Jin Yun
  • Patent number: 9448905
    Abstract: A method of controlling a storage device comprises monitoring whether a quality of service (QoS) of the storage device satisfies a quality condition set through a host, and adjusting a current setting of at least one operation metric of the storage device related to the QoS, according to a result of the monitoring.
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: September 20, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Uk Kang, Jee Seok Hyun, Eun Jin Yun
  • Patent number: 9437313
    Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: September 6, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-jin Yun, Sang-chul Kang
  • Patent number: 9367255
    Abstract: A storage device includes a variable resistance memory, a flash memory and a controller. The flash memory includes a plurality of memory cells connected to a plurality of word lines. The controller is configured to receive data from an external device and program the received data in the variable resistance memory or the flash memory according to a quantity of data to be programmed in the flash memory. Further, the controller is configured to read from the variable resistance memory and program the read data in the flash memory, when the quantity of data accumulated in the variable resistance memory corresponds to a super page of data.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: June 14, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Jin Yun, Bogeun Kim
  • Publication number: 20160110255
    Abstract: Provided are a data storage system, a data storage device and a RAID controller, which can control RAID operation and a RAID operating method of a memory device by transmitting a RAID configuration signal to the memory device. The data storage system includes a memory device that may include m nonvolatile memories, where m is a natural number, and a memory controller that may program data to at least the first to mth pages. The data storage system also includes a RAID controller that may generate a RAID configuration signal, including a RAID operation signal for determining whether to activate or deactivate a RAID operation of the memory device, and that may transmit the data and the RAID configuration signal to the memory controller.
    Type: Application
    Filed: July 15, 2015
    Publication date: April 21, 2016
    Inventor: Eun-Jin YUN
  • Publication number: 20160041876
    Abstract: A method of reading from a memory module which includes a plurality of memories is provided. The method includes reading data corresponding to a plurality of burst length units from the plurality of memories; correcting an error of the read data using a storage error correction code; and outputting the error corrected data by a unit of data corresponding to one burst length unit.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 11, 2016
    Inventor: Eun-Jin Yun
  • Publication number: 20160004469
    Abstract: An operating method is for a memory system which includes a NAND flash memory, a resistance variable memory, and a controller controlling the NAND flash memory and the resistance variable memory. The operating method includes receiving data, programming the received data in the NAND flash memory when the received data is at least a super page of data, programming the received data in the resistance variable memory when the received data is not a super page of data, and programming data accumulated in the resistance variable memory in the NAND flash memory when the accumulated data is a super page of data. A super page of data is an entirety of data that is programmable in memory cells connected to a same word line of the NAND flash memory.
    Type: Application
    Filed: September 16, 2015
    Publication date: January 7, 2016
    Inventors: EUN-JIN YUN, BOGEUN KIM
  • Patent number: D824910
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: August 7, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D826944
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: August 28, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D826945
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: August 28, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D826946
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: August 28, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D828357
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: September 11, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D828358
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: September 11, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun
  • Patent number: D834025
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: November 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: G. M Lim, Eun-jin Yun